Pressure and temperature effects on magnetoelectric band energies in GaAs / InxGa1-xAs cylindrical quantum wires
Abstract
Keywords
Ground State Energy, GaAs/Ga1-xInxAs Quantum Wire, Hydrostatic pressure
References
- Frensley, W. R. , VLSI Electronics Microstructure Science, Chapter Heterostructure and Quantum Well Physics, 24 (1994) 1-24.
- Lim, H., Yoon, S. I., Kim, G., Jang A.R., Shin, H. S., Stacking of two –dimensional materials in lateral and vertical directions, Chem. Mater., 26 (2014) 4891-4903.
- Withers, F., et al.,Light-emitting diodes by band-structure engineering in van der Walls hetetostructures, Nat. Mater., 14 (2015) 301-306.
- S. Paul, J. B. Roy, and P. K. Basu, Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs, J. Appl. Phys., 69 (1991) 827-829.
- Pearsall, T. P. and Hirtz, J. P., The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy, J. Cryst, Growth, 54 (1981) 127-131.
- Pearsall, T. , IEEE Xplore - Ga0.47In0.53As: A ternary semiconductor for photodetector applications, IEEE Journal of Quantum Electronics, 16 (1980) 709-720.
- Razeghi, M., Hirtz, J. P., Ziemelis, D., Delalande, C., Etienne, B. and Voos, M., Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition, Appl. Phys. Lett., 43 (1983) 585-587.
- M. Razeghi, J. Nagle and C. Weisbuch, Gallium Arsenide and Related Compounds, 1985 (Inst. Phys. ConJ Ser. 74) 319.
- Pearsall, T.P., Bisaro, R., Ansel, R. and Merenda, P., The growth of GaxIn1−xAs on (100) InP by liquid‐phase epitaxy, Appl. Phys. Lett., 32 (1978) 497-499.
- Pearsall P. and Papuchon, M., The Ga0.47In0.53As homojunction photodiode A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm, Appl. Phys. Lett., 33 (1978) 640-642.