Conductance and Density of Interface State Characteristics of Mn Doped CdO Photodiodes

Yıl 2020, , 925 - 939, 31.01.2020

Mümin Mehmet Koç

https://doi.org/10.29130/dubited.641738

Öz

Sol-gel
technique was used to fabricate CdO and Mn doped CdO solutions which were used
to produce thin films. Undoped and 0.2% Mn doped, 6% Mn doped, and 10% Mn doped
solutions were spin coated on Si wafers to fabricate photodiodes. Conductance –
voltage (G - V) measurements were performed. Mn doping enhances the conductance
properties of the CdO diodes. Increased conductance characteristics were
obtained with increasing AC signal frequency. Corrective conductance – voltage
(G_adj – V) graphs were obtained using conductance voltage graphs.
Increased corrective conductance (G_adj) values were obtained with
increasing AC signal frequency. Using corrective conductance – voltage (G_adj
– V) and conductance – voltage (G - V) data density of interface states (Dit)
values of the diodes were calculated. Different density of state values were
obtained for the different photodiode. Density of state values were found to
increase with increased Mn doping.

Anahtar Kelimeler

CdO Thin Films, Mn Doping, Photodiodes, G - V, , Gadj - V, Density of Interface States

Mn Katkılı CdO Fotodiyotların İletkenlik ve Arayüz Durum Yoğunluğu Karakteristikleri

Öz

İnce film üretiminde kullanılan CdO ve Mn katkılı CdO çözeltiler
Sol-gel yöntemi kullanılarak üretildi. Katkısız, %0.2 Mn katkılı, %6 Mn katkılı
ve %10 Mn katkılı CdO çözeltileri spin kaplama yöntemi kullanılarak silisyum tabakalar
üzerine fotofiyot üretim amacı ile kaplandı. İletkenlik – voltaj (G - V)
ölçümleri gerçekleştirildi. Mn katkılamanın CdO fotodiyotların iletkenlik
özelliklerini iyileştirdiği görüldü. Artan AC sinyal frekansı ile iletkenlik
karakteristiğinin de artış gösterdiği tespit edildi. Düzeltilmiş iletkenlik –
voltaj (G_adj – V) grafikleri,  iletkenlik – voltaj grafikleri kullanılarak
elde edildi. Artan AC sinyal frekansı ile düzeltilmiş iletkenlik değerinin de
artış gösterdiği anlaşıldı. Düzeltilmiş iletkenlik – voltaj ve iletkenlik –
voltaj grafikleri kullanılarak arayüz durum yoğunluğu değerleri elde edildi.
Üretilen farklı fotodiyotlar için farklı arayüz durum yoğunluğu değerleri var
olduğu anlaşıldı. Arayüz durum yoğunluğu değerlerinin Mn katkılaması ile
arttığı keşfedildi. 

Anahtar Kelimeler

CdO İnce Filmler, Mn Katkılama, Fotodiyotlar, G - V, Gadj - V, Arayüz Durum Yoğunluğu

Kaynakça

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