Research Article

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

Volume: 20 December 16, 2019
Gonca Ilgu Buyuk , Saliha Ilıcan *
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Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering Cover Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering
EN

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

Abstract

In this work, Er doped ZnO films and silicon substrates were used as n-type and p-type semiconductors, respectively. In order to obtained p-Si/n-ZnO:Er heterojunction structures, top (aluminum; Al) and bottom (gold; Au) metal contacts were deposited using a evaporator and sputter, respectively. The electrical characterization of these heterojunctions were investigated by current–voltage (I–V) characteristics at room temperature and in dark. It was observed that Au/p-Si/n-ZnO:Er/Al heterojunction structures have rectifying properties. The diode parameters such as barrier height, series resistance and ideality factor were investigated by using I–V measurement data. These parameters were determined by using different methods.

Keywords

ZnO,Heterojunctions,Diode parameters

Supporting Institution

Eskisehir Technical University

Project Number

1501F032

Thanks

This work was supported by Eskisehir Technical University Commission of Research Projects under Grant no. 1501F032. This study was conducted as part of the Doctoral Thesis of Gonca Ilgu Buyuk.

References

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Details

Primary Language

English

Subjects

-

Journal Section

Research Article

Authors

Publication Date

December 16, 2019

Submission Date

November 4, 2019

Acceptance Date

December 9, 2019

Published in Issue

Year 2019 Volume: 20

DOI

https://doi.org/10.18038/estubtda.642315

IZ

https://izlik.org/JA52NS87MK

Cite

RIS / Bibtex
APA
Ilgu Buyuk, G., & Ilıcan, S. (2019). FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering, 20, 92-98. https://doi.org/10.18038/estubtda.642315
AMA
1.Ilgu Buyuk G, Ilıcan S. FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS. Estuscience - Se. 2019;20:92-98. doi:10.18038/estubtda.642315
Chicago
Ilgu Buyuk, Gonca, and Saliha Ilıcan. 2019. “FABRICATION AND I-V CHARACTERISTICS OF P-Si N-ZnO:Er HETEROJUNCTIONS”. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 20 (December): 92-98. https://doi.org/10.18038/estubtda.642315.
EndNote
Ilgu Buyuk G, Ilıcan S (December 1, 2019) FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 20 92–98.
IEEE
[1]G. Ilgu Buyuk and S. Ilıcan, “FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS”, Estuscience - Se, vol. 20, pp. 92–98, Dec. 2019, doi: 10.18038/estubtda.642315.
ISNAD
Ilgu Buyuk, Gonca - Ilıcan, Saliha. “FABRICATION AND I-V CHARACTERISTICS OF P-Si N-ZnO:Er HETEROJUNCTIONS”. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 20 (December 1, 2019): 92-98. https://doi.org/10.18038/estubtda.642315.
JAMA
1.Ilgu Buyuk G, Ilıcan S. FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS. Estuscience - Se. 2019;20:92–98.
MLA
Ilgu Buyuk, Gonca, and Saliha Ilıcan. “FABRICATION AND I-V CHARACTERISTICS OF P-Si N-ZnO:Er HETEROJUNCTIONS”. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering, vol. 20, Dec. 2019, pp. 92-98, doi:10.18038/estubtda.642315.
Vancouver
1.Gonca Ilgu Buyuk, Saliha Ilıcan. FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS. Estuscience - Se. 2019 Dec. 1;20:92-8. doi:10.18038/estubtda.642315