FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS

Year 2019, Volume: 20 Issue: 3, 296 - 306, 26.09.2019

Seval Aksoy

https://doi.org/10.18038/estubtda.506606

Cited By: 2

Abstract

To investigate the effects of
Mn dopant on n-ZnO/p-Si device performance, ZnO films were produced in
different Mn dopant by the sol gel spin coating method. Morphological
properties of the films were studied by emission scanning electron microscopy
(FESEM). Then, the n-ZnO:Mn/p-Si heterojunction diodes were fabricated. The
diode parameters were determined by current-voltage (I-V) measurements. The  values of the diodes were found to be 8.38,
6.84 and 3.87, respectively, for the diodes produced using undoped, 1% Mn doped
and 3% Mn doped ZnO films. At the same time, electrical parameters were
determined to compare by using Cheung and Norde methods. According to the
evaluation of  values obtained by different methods, an
improvement on the rectifying properties of the ZnO diode with Mn dopant has
been observed. In the continuation of the study, the photovoltaic properties of
the heterojunction diodes have been studied. The results obtained at different
illumination intensities showed that the diodes are sensitive to light. Capacitance-voltage
(C-V) measurements of the fabricated diodes are also investigated in detail.

Keywords

Mn doped ZnO, Sol gel, Heterojunction diode, FESEM, Electrical parameters

References

• [1] Y.M Hao., S. Y. Lou, S. M. Zhou, R. J. Yuan, G. Y. Zhu, and N. Li, “Structural. optical. and magnetic studies of manganese-doped zinc oxide hierarchical microspheres by self-assembly of nanoparticles,” Nanoscale Res. Lett., vol. 7, no. 100, pp. 1–9, 2012.
• [2] D. Sivalingam, J. B. Gopalakrishnan, and J. B. B. Rayappan, “Structural, morphological, electrical and vapour sensing properties of Mn doped nanostructured ZnO thin films,” Sensors Actuators, B Chem., vol. 166–167, pp. 624–631, 2012.
• [3] R. N. Gayen and R. Paul, “Nanocrystalline Zn1-XMnxO thin film based transparent Schottky diodes,” Thin Solid Films, vol. 605, pp. 248–256, 2016.
• [4] T. M. Hammad, S. Griesing, M. Wotocek, S. Kuhn, R. Hempelmann, U. Hartmann and J. K. Salem “Optical and magnetic properties of Fe-doped ZnO nanoparticles prepared by the sol-gel method,” Int. J. Nanoparticles, vol. 6, no. 4, p. 324, 2013.
• [5] A. A. M. Farag, M. Cavas, F. Yakuphanoglu, and F. M. Amanullah, “Photoluminescence and optical properties of nanostructure Ni doped ZnO thin films prepared by sol-gel spin coating technique,” J. Alloys Compd., vol. 509, no. 30, pp. 7900–7908, 2011.
• [6] A. Abdel-Galil, M. R. Balboul, and A. Sharaf, “Synthesis and characterization of Mn-doped ZnO diluted magnetic semiconductors,” Phys. B Condens. Matter, vol. 477, pp. 20–28, 2015.
• [7] A. Dhara, S. Sain, S. Das, and S. K. Pradhan, “Microstructure, optical, dielectric and electrical characterizations of Mn doped ZnO nanocrystals synthesized by mechanical alloying,” Ceram. Int., vol. 44, no. 6, pp. 7110–7121, 2018.
• [8] S. A. Ahmed, “Results in Physics Structural , optical , and magnetic properties of Mn-doped ZnO samples,” vol. 7, pp. 604–610, 2017.
• [9] L. A. Alkhtaby, S. Husain,W. Khan and S.A.H. Naaqvi “Structural and Optical Properties of Mn Doped ZnO Nanoparticles,” vol. 23, no. 12, pp. 5605–5607, 2011.
• [10] I. Taşçioǧlu, W. A. Farooq, R. Turan, Ş. Altindal, and F. Yakuphanoglu, “Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes,” J. Alloys Compd., vol. 590, pp. 157–161, 2014.
• [11] Y. Caglar, K. Gorgun, and S. Aksoy, “Effect of deposition parameters on the structural properties of ZnO nanopowders prepared by microwave-assisted hydrothermal synthesis,” Spectrochim. Acta - Part A Mol. Biomol. Spectrosc., vol. 138, no. December, pp. 617–622, 2015.
• [12] S. Aksoy and Y. Caglar, “Effect of ambient temperature on electrical properties of nanostructure n-ZnO / p-Si heterojunction diode” Superlattices and Microstructures, 51(5), 613–625, 2012.
• [13] E. Amoupour, F. E. Ghodsi, H. Andarva, and A. A. Ziabari, “Preparation and investigation of optical, structural, and morphological properties of nanostructured ZnO:Mn thin films,” Pramana, vol. 81, no. 2, pp. 331–341, 2013.
• [14] D. Hu, X. Liu, S. Deng, Y. Liu, Z. Feng, B. Han, Y. Wang, Y. Wang, “Structural and optical properties of Mn-doped ZnO nanocrystalline thin films with the different dopant concentrations,” Phys. E Low-Dimensional Syst. Nanostructures, vol. 61, pp. 14–22, 2014.
• [15] V. Sharma, M. Dixit, V. R. Satsangi, S. Dass, S. Pal, and R. Shrivastav, “Photoelectrochemical splitting of water with nanocrystalline Zn1−xMnxO thin films: First-principle DFT computations supporting the systematic experimental endeavor,” Int. J. Hydrogen Energy, vol. 39, no. 8, pp. 3637–3648, 2014.
• [16] S. M. Sze, Physics of Semiconductor Devices, Second ed. Wiley-Newyork, 1981.
• [17] A. Cultrera, L. Boarino, G. Amato, and C. Lamberti, “Band-gap states in unfilled mesoporous nc-TiO 2 : measurement protocol for electrical characterization,” J. Phys. D. Appl. Phys., vol. 47, no. 1, p. 15102, 2014.
• [18] S. K. Cheung and N. W. Cheung, “Extraction of Schottky diode parameters from forward current-voltage characteristics,” Appl. Phys. Lett., vol. 49, no. 2, pp. 85–87, 1986.
• [19] R. K. Gupta, K. Ghosh, and P. K. Kahol, “Fabrication and characterization of NiO/ZnO p–n junctions by pulsed laser deposition,” Phys. E Low-dimensional Syst. Nanostructures, vol. 41, no. 4, pp. 617–620, 2009.
• [20] H. Norde, “A modified forward I‐V plot for Schottky diodes with high series resistance,” J. Appl. Phys, vol. 50, p. 5052, 1979.
• [21] K. Gorgun, Y. Caglar, and F. Yakuphanoglu, “Synthesis and Photodiode Characterization of Novel Twisted Carbazole Derivatives with 1 , 3 , 5-Benzene Core,” pp. 693–702, 2018.
• [22] F. Yakuphanoglu, “Yeni MicElectrical Characterization and Interface State Density Properties of the ITO/C70/Au Schottky Dioderosoft Word Belgesi,” J. Phys. Chem. C, vol. 111, no. 3, pp. 1505–1507, 2007.
• [23] Y. Caglar, M. Caglar, S. Ilican, and F. Yakuphanoglu, “Determination of the electronic parameters of nanostructure SnO2/p-Si diode,” Microelectron. Eng., vol. 86, no. 10, pp. 2072–2077, 2009.
• [24] Y. P. Song, R. L. Van Meirhaeghe, W. H. Laflère, F.Cardon, “On the Difference in Apparent Barrier Height as Obtained from Capacitance-voltage and Current-voltage- temperature Measurements on Al/p-InP Schottky Barrier,” Solid. State. Electron., vol. 29, no. 6, pp. 633–638, 1986.
• [25] B. F. Şenkal and Yakuphanoglu, “Electronic and Thermoelectric Properties of Polyaniline Organic Semiconductor and Electrical Characterization of Al/PANI MIS Diode,” Phys. Chem. C, vol. 111, no. 4, p. 1846, 2007.