New FinFet Transistor Implementation of Floating and Grounded Inductance Simulator Based on Active Elements.

Abstract

This research presents a new Finfet transistor that utilizes current mode active device technology to construct a floating and grounded inductance simulator. In this work, the grounded inductance circuit (GIC) uses only two Z-copy current follower transconductance amplifiers (Zc-CFTA’s) and one grounded capacitor, and the floating inductance circuit (FIC) in the suggested simulator uses just three Z-copy current follower transconductance amplifiers (ZC-CFTA’s) as active elements with only single grounded capacitor as an active inductor simulation. The aim of this work is to realize an active inductance simulator with only one capacitor, which is commercially available as an active building block (ABB). In addition, the designed circuit shows low incremental active and passive hypersensitivity and non-interactive electronic control of the quality factor (Q) and natural angle frequency (w0). Through computer simulation results with a fourth-order Butterworth band-pass filer used LT-spice and cadence virtuoso program with 7nm process parameter, the suggested circuits' performances were assessed.

Keywords

• Finfet transistor
• floating and grounded inductance simulator
• Z-copy CFTA (ZC-CFTA)

Aktif Elemanlara Dayalı Yüzen ve Topraklanmış Endüktans Simülatörünün Yeni FinFET Transistör Uygulaması

Abstract

Bu araştırma, yüzen ve topraklanmış bir endüktans simülatörü oluşturmak için Akım mod aktif cihaz teknolojisini kullanan yeni bir Finfet transistörü sunmaktadır. Bu çalışmada, topraklanmış endüktans devresi (GIC) yalnızca iki Z-kopya akım takipçisi traniletkenlik amplifikatörü (ZCCFTA'ler) ve bir topraklanmış kapasitör kullanır ve önerilen simülatördeki yüzen endüktans devresi (FIC), aktif bir indüktör simülasyonu olarak yalnızca tek topraklanmış kapasitörle aktif elemanlar olarak sadece üç Z-kopya akım takipçi traniletkenlik amplifikatörü (ZC-CFTA) kullanır. Bu çalışmanın amacı, ticari olarak aktif yapı taşı (ABB) olarak temin edilebilen tek bir kapasitörle aktif endüktans simülatörü gerçekleştirmektir. Ek olarak, tasarlanan devre düşük artımlı aktif ve pasif aşırı duyarlılık ve kalite faktörünün (Q) ve doğal açı frekansının (w0) etkileşimli olmayan elektronik kontrolünü gösterir. Dördüncü dereceden Butterworth bant geçişli filtre kullanan LT-SPICE ve 7nm işlem parametresine sahip cadence virtüöz programı ile bilgisayar simülasyon sonuçları ile önerilen devrelerin performansları değerlendirildi.

Keywords

• Finfet transistör
• yüzer ve topraklanmış endüktans simülatörü
• Z-kopya CFTA (ZC-CFTA)

Ethical Statement

Bu çalışmada yayın etiğine uyulmuştur.

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