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Aktif Elemanlara Dayalı Yüzen ve Topraklanmış Endüktans Simülatörünün Yeni FinFET Transistör Uygulaması

Year 2023, Volume: 9 Issue: 3, 647 - 653, 01.01.2024

Abstract

Bu araştırma, yüzen ve topraklanmış bir endüktans simülatörü oluşturmak için Akım mod aktif cihaz teknolojisini kullanan yeni bir Finfet transistörü sunmaktadır. Bu çalışmada, topraklanmış endüktans devresi (GIC) yalnızca iki Z-kopya akım takipçisi traniletkenlik amplifikatörü (ZCCFTA'ler) ve bir topraklanmış kapasitör kullanır ve önerilen simülatördeki yüzen endüktans devresi (FIC), aktif bir indüktör simülasyonu olarak yalnızca tek topraklanmış kapasitörle aktif elemanlar olarak sadece üç Z-kopya akım takipçi traniletkenlik amplifikatörü (ZC-CFTA) kullanır. Bu çalışmanın amacı, ticari olarak aktif yapı taşı (ABB) olarak temin edilebilen tek bir kapasitörle aktif endüktans simülatörü gerçekleştirmektir. Ek olarak, tasarlanan devre düşük artımlı aktif ve pasif aşırı duyarlılık ve kalite faktörünün (Q) ve doğal açı frekansının (w0) etkileşimli olmayan elektronik kontrolünü gösterir. Dördüncü dereceden Butterworth bant geçişli filtre kullanan LT-SPICE ve 7nm işlem parametresine sahip cadence virtüöz programı ile bilgisayar simülasyon sonuçları ile önerilen devrelerin performansları değerlendirildi.

Ethical Statement

Bu çalışmada yayın etiğine uyulmuştur.

References

  • [1] R. Chaujar, R. Kaur, M. Saxena, M. Gupta and R.S. Gupta, “TCAD assessment of gate electrode work function engineered recessed channel (GEWE-RC) MOSFET and its multilayered gate architecture—part I: hot-carrier-reliability evaluation,” IEEE Trans Electron Devices, vol. 55, pp. 2602–2612, 2008. doi:10.1109/TED.2008.2003085
  • [2] X. Chen and C. M. Tan, “Modeling and analysis of gate-all-around silicon nanowire FET,” Microelectron Reliab, vol. 54, pp. 1103–1108, 2014. doi: 10.1016/j.microrel.2013.12.009
  • [3] S. Deb, N. B. Singh, N. Islam and S.K. Sarkar, “Work function engineering with linearly graded binary metal alloy gate electrode for short channel SOI MOSFET,” IEEE Trans Nanotechnol, vol. 11, pp. 472–478, 2012. doi:10.1109/TNANO.2011.2177669
  • [4] H. Iwai, K. Natori, K. Shiraishi, J. Iwata, A. Oshiyama, K. Yamada, K. Ohmori, K. Kakushima and P. Ahmet, “Si nanowire FET and its modeling,” Sci China Inf Sci Springer, vol. 54, pp. 1004–1011, 2011. doi:10.1007/s11432-011-4220-0.
  • [5] S. Venkatesan, G.W. Neudeck and R.F. Pierret, “Dual-gate operation and volume inversion in n-channel SOIMOSFET’s,” IEEE Electron Device Letter, vol. 13, pp. 44–46, 1992. doi:10.1109/55.144946
  • [6] B. Yu, C.H.J. Wann, E.D. Nowak, K Noda and C. Hu, “Short-channel effect improved by lateral channel engineering in deep-submicron meter MOSFET’s,” IEEE Trans Electron Devices, vol. 44, pp. 627– 634, 1997. doi:10.1109/16.563368
  • [7] A. A. Mohammed, K. M. Zaidoon and H. Demirel, "Study Of Fınfet Transıstor: Crıtıcal And Lıterature Revıew In Fınfet Transıstor In The Actıve Fılter," 3C TIC, vol. 12, pp. 65-81, 2023. https://doi.org/ 10.17993/3ctic.2023.121.65-81
  • [8] A. Ahmed and H. Demirel, “FPAA Based on Floating Current Source Analog system design,” Design Engineering, vol. 8, pp.10953-10969, 2021. http://thedesignengineering.com/index.php/DE/article/view/6155
  • [9] J. W. Horng, C. L. Hou, C.M. Chang, W.Y. Chung, H. I. Tang and Y. I. Wen, “Quadrature oscillator using CCIIs,” International Journal of Electronics, vol. 92, pp. 21-31, 2005. https://doi.org/10.1080/00207210412331332899
  • [10] H. Demirel and A. Ahmed, “A Low-Power 30MHz,6th Order Bandpass Differential Gm-C Filter on Chip Utilizing Floating Current Source”, Kastamonu University Journal of Engineering and Sciences, vol. 9, no. 2, pp. 96–103, 2023, doi: 10.55385/kastamonujes.1395608.
  • [11] H. Demirel and A. Ahmed, “Design Third Order Sinusoidal Oscillator Employing Current Differencing Cascaded Trans conductance Amplifiers,” Gazi University Journal of Science Part C: Design and Technology, vol. 11, no. 3, pp. 735-743, 2023. https://doi.org/10.29109/gujsc.1290137
  • [12] A. A. Mohammed, “Design of Voltage Mode 6th Order Elliptic Band-pass Filter Using Z-Copy Current Follower Transconductance Amplifier) ZC-CFTA,” Kirkuk University Journal-Scientific Studies, vol. 12, no. 2, pp. 271-285, 2017.

New FinFet Transistor Implementation of Floating and Grounded Inductance Simulator Based on Active Elements.

Year 2023, Volume: 9 Issue: 3, 647 - 653, 01.01.2024

Abstract

This research presents a new Finfet transistor that utilizes current mode active device technology to construct a floating and grounded inductance simulator. In this work, the grounded inductance circuit (GIC) uses only two Z-copy current follower transconductance amplifiers (Zc-CFTA’s) and one grounded capacitor, and the floating inductance circuit (FIC) in the suggested simulator uses just three Z-copy current follower transconductance amplifiers (ZC-CFTA’s) as active elements with only single grounded capacitor as an active inductor simulation. The aim of this work is to realize an active inductance simulator with only one capacitor, which is commercially available as an active building block (ABB). In addition, the designed circuit shows low incremental active and passive hypersensitivity and non-interactive electronic control of the quality factor (Q) and natural angle frequency (w0). Through computer simulation results with a fourth-order Butterworth band-pass filer used LT-spice and cadence virtuoso program with 7nm process parameter, the suggested circuits' performances were assessed.

References

  • [1] R. Chaujar, R. Kaur, M. Saxena, M. Gupta and R.S. Gupta, “TCAD assessment of gate electrode work function engineered recessed channel (GEWE-RC) MOSFET and its multilayered gate architecture—part I: hot-carrier-reliability evaluation,” IEEE Trans Electron Devices, vol. 55, pp. 2602–2612, 2008. doi:10.1109/TED.2008.2003085
  • [2] X. Chen and C. M. Tan, “Modeling and analysis of gate-all-around silicon nanowire FET,” Microelectron Reliab, vol. 54, pp. 1103–1108, 2014. doi: 10.1016/j.microrel.2013.12.009
  • [3] S. Deb, N. B. Singh, N. Islam and S.K. Sarkar, “Work function engineering with linearly graded binary metal alloy gate electrode for short channel SOI MOSFET,” IEEE Trans Nanotechnol, vol. 11, pp. 472–478, 2012. doi:10.1109/TNANO.2011.2177669
  • [4] H. Iwai, K. Natori, K. Shiraishi, J. Iwata, A. Oshiyama, K. Yamada, K. Ohmori, K. Kakushima and P. Ahmet, “Si nanowire FET and its modeling,” Sci China Inf Sci Springer, vol. 54, pp. 1004–1011, 2011. doi:10.1007/s11432-011-4220-0.
  • [5] S. Venkatesan, G.W. Neudeck and R.F. Pierret, “Dual-gate operation and volume inversion in n-channel SOIMOSFET’s,” IEEE Electron Device Letter, vol. 13, pp. 44–46, 1992. doi:10.1109/55.144946
  • [6] B. Yu, C.H.J. Wann, E.D. Nowak, K Noda and C. Hu, “Short-channel effect improved by lateral channel engineering in deep-submicron meter MOSFET’s,” IEEE Trans Electron Devices, vol. 44, pp. 627– 634, 1997. doi:10.1109/16.563368
  • [7] A. A. Mohammed, K. M. Zaidoon and H. Demirel, "Study Of Fınfet Transıstor: Crıtıcal And Lıterature Revıew In Fınfet Transıstor In The Actıve Fılter," 3C TIC, vol. 12, pp. 65-81, 2023. https://doi.org/ 10.17993/3ctic.2023.121.65-81
  • [8] A. Ahmed and H. Demirel, “FPAA Based on Floating Current Source Analog system design,” Design Engineering, vol. 8, pp.10953-10969, 2021. http://thedesignengineering.com/index.php/DE/article/view/6155
  • [9] J. W. Horng, C. L. Hou, C.M. Chang, W.Y. Chung, H. I. Tang and Y. I. Wen, “Quadrature oscillator using CCIIs,” International Journal of Electronics, vol. 92, pp. 21-31, 2005. https://doi.org/10.1080/00207210412331332899
  • [10] H. Demirel and A. Ahmed, “A Low-Power 30MHz,6th Order Bandpass Differential Gm-C Filter on Chip Utilizing Floating Current Source”, Kastamonu University Journal of Engineering and Sciences, vol. 9, no. 2, pp. 96–103, 2023, doi: 10.55385/kastamonujes.1395608.
  • [11] H. Demirel and A. Ahmed, “Design Third Order Sinusoidal Oscillator Employing Current Differencing Cascaded Trans conductance Amplifiers,” Gazi University Journal of Science Part C: Design and Technology, vol. 11, no. 3, pp. 735-743, 2023. https://doi.org/10.29109/gujsc.1290137
  • [12] A. A. Mohammed, “Design of Voltage Mode 6th Order Elliptic Band-pass Filter Using Z-Copy Current Follower Transconductance Amplifier) ZC-CFTA,” Kirkuk University Journal-Scientific Studies, vol. 12, no. 2, pp. 271-285, 2017.
There are 12 citations in total.

Details

Primary Language English
Subjects Circuits and Systems
Journal Section Research Articles
Authors

Huseyin Demirel 0000-0003-2983-1425

Arsen Ahmed 0000-0003-2239-9940

Publication Date January 1, 2024
Submission Date November 27, 2023
Acceptance Date January 1, 2024
Published in Issue Year 2023 Volume: 9 Issue: 3

Cite

IEEE H. Demirel and A. Ahmed, “New FinFet Transistor Implementation of Floating and Grounded Inductance Simulator Based on Active Elements”., GJES, vol. 9, no. 3, pp. 647–653, 2024.

Gazi Journal of Engineering Sciences (GJES) publishes open access articles under a Creative Commons Attribution 4.0 International License (CC BY). 1366_2000-copia-2.jpg