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Dielectric permittivity, ac conductivity and electric modulus properties of metal/ferroelectric/semiconductor (MFS) structures

Year 2013, Volume: 26 Issue: 3, 501 - 508, 03.07.2013

Adem Tataroğlu

https://izlik.org/JA36UM28ZJ

Abstract

Keywords

MFS structures; C-V and G/ω-V measurements; dielectric permittivity; ac

References

  • N.V. Giridharan, R. Varatharajan, R. Jayavel, P. Ramasamy, Mater. Chem. Phys. 65 (2000) 261
  • A. Mansingh, Ferroelectrics 102 (1990) 69.
  • N. Kumari, J. Parui, K.B.R. Varma, S.B. Krupanidhi, Solid State Comm. 137 (2006) 566.
  • T.A. Rost, H. Lin, T.A. Rabson, Appl. Phys. Lett. 59 (1991) 3654.
  • Zh. Wang, Ch.H. Yang, X.Y. Yu, T. Yu, J. Crys. Growth 280 (2005) 557.
  • T. Hirai, K. Teramoto, K. Nagashima, Jpn. J. Appl. Phys. 34 (1995) 4163.
  • J.J. Zhang, J. Sun, X.J. Zheng, Solid-State Electron. 53 (2009) 170.
  • V.R. Palkar, S.C. Purandare, R. Pinto, J. Phys. D: Appl. Phys. 32 (1999) R1.
  • E. Rokuta, Y. Hotta, T. Kubota, H. Tabata, H. Kobayashi, T. Kawaia, Appl. Phys. Lett. 79 (2001) 403.
  • K. Aizawa, E. Tokumitsu, K. Okamoto, H. Ishawara, Appl. Phys. Lett., 7 (2000) 2609.
  • F. Parlaktürk, Ş. Altındal, A. Tataroğlu, M. Parlak, A. Agasiev, Microelectron. Eng. 85 (2008) 81.
  • C.K. Lee, W.S. Kim, H. Park, H. Jeon, Y.H. Pae, Thin Solid Films 473 (2005) 335.
  • A. Fouskova, L.E. Cross, J. Appl. Phys. 41 (1970) 2834.
  • L.B. Kong, J. Ma, Thin Solid Films 379 (2000) 89.
  • S.Y. Wu, J. Appl. Phys. 50 (1979) 4314.
  • D. Wu, A. Li, N. Ming, Microelectron. Eng. 66 (2003) 773.
  • J.P. Han, T.P. Ma, Appl. Phys. Lett. 72 (1998) 1185.
  • P.C. Joshi, S.B. Desu, J. Appl. Phys. 80 (1996) 2349.
  • E.B. Araujo, J.A. Eiras, J. Phys. D: Appl. Phys. 32 (1999) 957.
  • W.L. Liu, H.R. Xia, H. Han, X.Q. Wang, J. Crys. Growth 264 (2004) 351.
  • Ş. Altındal, F. Parlaktürk, A. Tataroğlu, M.M. Bülbül, J. Optoelectron. Adv. Mater. 12 (2010) 2139.
  • E.H. Nicollian, J.R. Brews, Metal oxide semiconductor (MOS) physics and technology, John Willey & Sons, New York, 1982.
  • E.H. Nicollian and A. Goetzberger, Appl. Phys. Lett. 7 (1965) 216. [24] M.D. Kannan, S.K. Balasubramanian, D. Mangalaraj, Phys. Stat. Sol. (a) 121 (1990) 515. Narayandass, C.
  • Zh. Wang, Ch.H. Yang, X.Y. Yu, T. Yu, J. Crys. Growth 280 (2005) 557.
  • L. Fu, K. Liu, B. Zhang, J. Chu, Appl. Phys. Lett. 72 (1998) 1784. [27] P. Matheswaran, R. Saravanakumar, S. Velumani, Mater. Sci. Eng. B 174 (2010) 269. Sathyamoorthy, R.
  • K. Prabakar, S.K. Narayandass, D. Mangalaraj, Phys. Stat. Sol. (a) 199 (2003) 507. [29] J.H. Werner, Metallization Semiconductor Interface, Plenum, New York, 1989. and Metal
  • N.G. McCrum, B.E. Read, G. Williams, Anelastic and Dielectric Effects in Polymeric Solids, Wiley, New York, 1967. [31] A. Eroğlu, A. Microelectron. Eng. 91 (2012) 154. Ş. Altındal,
  • M.M. Abdel Kader, M.Y. Elzayat, T.R. Hammad, A.I. Aboud, H. Abdelmonem, Phys. Scr. 83 (2011) 035705.
  • D. Cheng, Field and Wave Electromagnetics, 2nd Ed., Addison-Wesley, New York, 1989.
  • A. Chelkowski, Dielectric Physics, Elsevier, Amsterdam, 1980.
  • M. Popescu, I. Bunget, Physics of Solid Dielectrics, Elsevier, Amsterdam, 1984.
  • A. Tataroğlu, J. Optoelectron. Adv. Mater. 13 (2011) 940.
  • S. Maity, D. Bhattacharya, S.K. Ray, J. Phys. D: Appl. Phys. 44 (2011) 095403. [38] L. Kungumadevi, R. Subbarayan, Solid-State Electron. 54 (2010) 58. Sathyamoorthy, A.
  • J.S. Kim, H.J. Lee, S.Y. Lee, I.W. Kim, S.D. Lee, Thin Solid Films 518 (2010) 6390.
  • N. Singh, A. Agarwal, S. Sanghi, Current Appl. Phys. 11 (2011) 783.
  • E.B. Araşjo, J.A. Eiras, J. Phys. D: Appl. Phys. 32 (1999) 957.
  • A.K. Dubey, P. Singh, S. Singh, D. Kumar, O. Parkash, J. Alloys Compd. 509 (2011) 3899.
  • M.A. Elkestawy, S. Abdel kader, M.A. Amer, Physica B 405 (2010) 619.
  • A.M. Farid, H.E. Atyia, N.A. Hegab, Vacuum 80 (2005) 284.
  • A.A.M. Farag, A.M. Mansour, A.H. Ammar, M. Abdel Rafea, A.M. Farid, J.Alloys Compd. 513 (2012) 404.
  • K.C. Verma, M. Ram, J. Singh, R.K. Kotnala, J. Alloys Compd. 509 (2011) 4967.
  • L. Agrawal, A. Dutta, S. Shannigrahi, B.P. Singh, T.P. Sinha, Physica B 406 (2011)
  • M.P. Kumar, T. Sankarappa, G.B. Devidas, P.J. Sadashivaiah, Mater. Sci. Eng. 2 (2009) 012050.
  • B. Louati, F. Hlel, K. Guidara, J. Alloys Compd. 486 (2009) 299.
  • ,.A. Hegab, M.A. Afifi, H.E. Atyia, A.S. Farid, J. Alloys Compd. 477 (2009) 925.
  • A.K. Jonscher, Universal Relaxation Law, Chelsea Dielectric Press, London, 1996.
  • F. Yakuphanoğlu, Physica B 393 (2007) 139.
  • T.Z. Rizvi, A. Shakoor, J. Phys. D: Appl. Phys. 42 (2009) 095415.
  • Moti Ram, S. Chakrabarti, J. Alloys Compd. 462 (2008) 214.
  • R. Ertuğrul, A. Tataroğlu, Chin. Phys. Lett. 29(7) (2012) 077304.
  • I.S. Yahia, M.S. Abd El-sadek, F. Yakuphanoğlu, Dyes and Pigments 93 (2012) 1434.
  • M.B. Mohamed, H. Wang, H. Fuess, J. Phys. D: Appl. Phys. 43 (2010) 455409.

Year 2013, Volume: 26 Issue: 3, 501 - 508, 03.07.2013

Adem Tataroğlu

https://izlik.org/JA36UM28ZJ

Abstract

References

  • N.V. Giridharan, R. Varatharajan, R. Jayavel, P. Ramasamy, Mater. Chem. Phys. 65 (2000) 261
  • A. Mansingh, Ferroelectrics 102 (1990) 69.
  • N. Kumari, J. Parui, K.B.R. Varma, S.B. Krupanidhi, Solid State Comm. 137 (2006) 566.
  • T.A. Rost, H. Lin, T.A. Rabson, Appl. Phys. Lett. 59 (1991) 3654.
  • Zh. Wang, Ch.H. Yang, X.Y. Yu, T. Yu, J. Crys. Growth 280 (2005) 557.
  • T. Hirai, K. Teramoto, K. Nagashima, Jpn. J. Appl. Phys. 34 (1995) 4163.
  • J.J. Zhang, J. Sun, X.J. Zheng, Solid-State Electron. 53 (2009) 170.
  • V.R. Palkar, S.C. Purandare, R. Pinto, J. Phys. D: Appl. Phys. 32 (1999) R1.
  • E. Rokuta, Y. Hotta, T. Kubota, H. Tabata, H. Kobayashi, T. Kawaia, Appl. Phys. Lett. 79 (2001) 403.
  • K. Aizawa, E. Tokumitsu, K. Okamoto, H. Ishawara, Appl. Phys. Lett., 7 (2000) 2609.
  • F. Parlaktürk, Ş. Altındal, A. Tataroğlu, M. Parlak, A. Agasiev, Microelectron. Eng. 85 (2008) 81.
  • C.K. Lee, W.S. Kim, H. Park, H. Jeon, Y.H. Pae, Thin Solid Films 473 (2005) 335.
  • A. Fouskova, L.E. Cross, J. Appl. Phys. 41 (1970) 2834.
  • L.B. Kong, J. Ma, Thin Solid Films 379 (2000) 89.
  • S.Y. Wu, J. Appl. Phys. 50 (1979) 4314.
  • D. Wu, A. Li, N. Ming, Microelectron. Eng. 66 (2003) 773.
  • J.P. Han, T.P. Ma, Appl. Phys. Lett. 72 (1998) 1185.
  • P.C. Joshi, S.B. Desu, J. Appl. Phys. 80 (1996) 2349.
  • E.B. Araujo, J.A. Eiras, J. Phys. D: Appl. Phys. 32 (1999) 957.
  • W.L. Liu, H.R. Xia, H. Han, X.Q. Wang, J. Crys. Growth 264 (2004) 351.
  • Ş. Altındal, F. Parlaktürk, A. Tataroğlu, M.M. Bülbül, J. Optoelectron. Adv. Mater. 12 (2010) 2139.
  • E.H. Nicollian, J.R. Brews, Metal oxide semiconductor (MOS) physics and technology, John Willey & Sons, New York, 1982.
  • E.H. Nicollian and A. Goetzberger, Appl. Phys. Lett. 7 (1965) 216. [24] M.D. Kannan, S.K. Balasubramanian, D. Mangalaraj, Phys. Stat. Sol. (a) 121 (1990) 515. Narayandass, C.
  • Zh. Wang, Ch.H. Yang, X.Y. Yu, T. Yu, J. Crys. Growth 280 (2005) 557.
  • L. Fu, K. Liu, B. Zhang, J. Chu, Appl. Phys. Lett. 72 (1998) 1784. [27] P. Matheswaran, R. Saravanakumar, S. Velumani, Mater. Sci. Eng. B 174 (2010) 269. Sathyamoorthy, R.
  • K. Prabakar, S.K. Narayandass, D. Mangalaraj, Phys. Stat. Sol. (a) 199 (2003) 507. [29] J.H. Werner, Metallization Semiconductor Interface, Plenum, New York, 1989. and Metal
  • N.G. McCrum, B.E. Read, G. Williams, Anelastic and Dielectric Effects in Polymeric Solids, Wiley, New York, 1967. [31] A. Eroğlu, A. Microelectron. Eng. 91 (2012) 154. Ş. Altındal,
  • M.M. Abdel Kader, M.Y. Elzayat, T.R. Hammad, A.I. Aboud, H. Abdelmonem, Phys. Scr. 83 (2011) 035705.
  • D. Cheng, Field and Wave Electromagnetics, 2nd Ed., Addison-Wesley, New York, 1989.
  • A. Chelkowski, Dielectric Physics, Elsevier, Amsterdam, 1980.
  • M. Popescu, I. Bunget, Physics of Solid Dielectrics, Elsevier, Amsterdam, 1984.
  • A. Tataroğlu, J. Optoelectron. Adv. Mater. 13 (2011) 940.
  • S. Maity, D. Bhattacharya, S.K. Ray, J. Phys. D: Appl. Phys. 44 (2011) 095403. [38] L. Kungumadevi, R. Subbarayan, Solid-State Electron. 54 (2010) 58. Sathyamoorthy, A.
  • J.S. Kim, H.J. Lee, S.Y. Lee, I.W. Kim, S.D. Lee, Thin Solid Films 518 (2010) 6390.
  • N. Singh, A. Agarwal, S. Sanghi, Current Appl. Phys. 11 (2011) 783.
  • E.B. Araşjo, J.A. Eiras, J. Phys. D: Appl. Phys. 32 (1999) 957.
  • A.K. Dubey, P. Singh, S. Singh, D. Kumar, O. Parkash, J. Alloys Compd. 509 (2011) 3899.
  • M.A. Elkestawy, S. Abdel kader, M.A. Amer, Physica B 405 (2010) 619.
  • A.M. Farid, H.E. Atyia, N.A. Hegab, Vacuum 80 (2005) 284.
  • A.A.M. Farag, A.M. Mansour, A.H. Ammar, M. Abdel Rafea, A.M. Farid, J.Alloys Compd. 513 (2012) 404.
  • K.C. Verma, M. Ram, J. Singh, R.K. Kotnala, J. Alloys Compd. 509 (2011) 4967.
  • L. Agrawal, A. Dutta, S. Shannigrahi, B.P. Singh, T.P. Sinha, Physica B 406 (2011)
  • M.P. Kumar, T. Sankarappa, G.B. Devidas, P.J. Sadashivaiah, Mater. Sci. Eng. 2 (2009) 012050.
  • B. Louati, F. Hlel, K. Guidara, J. Alloys Compd. 486 (2009) 299.
  • ,.A. Hegab, M.A. Afifi, H.E. Atyia, A.S. Farid, J. Alloys Compd. 477 (2009) 925.
  • A.K. Jonscher, Universal Relaxation Law, Chelsea Dielectric Press, London, 1996.
  • F. Yakuphanoğlu, Physica B 393 (2007) 139.
  • T.Z. Rizvi, A. Shakoor, J. Phys. D: Appl. Phys. 42 (2009) 095415.
  • Moti Ram, S. Chakrabarti, J. Alloys Compd. 462 (2008) 214.
  • R. Ertuğrul, A. Tataroğlu, Chin. Phys. Lett. 29(7) (2012) 077304.
  • I.S. Yahia, M.S. Abd El-sadek, F. Yakuphanoğlu, Dyes and Pigments 93 (2012) 1434.
  • M.B. Mohamed, H. Wang, H. Fuess, J. Phys. D: Appl. Phys. 43 (2010) 455409.
There are 52 citations in total.

Details

Primary Language English
Authors

Adem Tataroğlu

Publication Date July 3, 2013
IZ https://izlik.org/JA36UM28ZJ
Published in Issue Year 2013 Volume: 26 Issue: 3

Cite

APA Tataroğlu, A. (2013). Dielectric permittivity, ac conductivity and electric modulus properties of metal/ferroelectric/semiconductor (MFS) structures. Gazi University Journal of Science, 26(3), 501-508. https://izlik.org/JA36UM28ZJ
AMA 1.Tataroğlu A. Dielectric permittivity, ac conductivity and electric modulus properties of metal/ferroelectric/semiconductor (MFS) structures. Gazi University Journal of Science. 2013;26(3):501-508. https://izlik.org/JA36UM28ZJ
Chicago Tataroğlu, Adem. 2013. “Dielectric Permittivity, Ac Conductivity and Electric Modulus Properties of Metal Ferroelectric Semiconductor (MFS) Structures”. Gazi University Journal of Science 26 (3): 501-8. https://izlik.org/JA36UM28ZJ.
EndNote Tataroğlu A (October 1, 2013) Dielectric permittivity, ac conductivity and electric modulus properties of metal/ferroelectric/semiconductor (MFS) structures. Gazi University Journal of Science 26 3 501–508.
IEEE [1]A. Tataroğlu, “Dielectric permittivity, ac conductivity and electric modulus properties of metal/ferroelectric/semiconductor (MFS) structures”, Gazi University Journal of Science, vol. 26, no. 3, pp. 501–508, Oct. 2013, [Online]. Available: https://izlik.org/JA36UM28ZJ
ISNAD Tataroğlu, Adem. “Dielectric Permittivity, Ac Conductivity and Electric Modulus Properties of Metal Ferroelectric Semiconductor (MFS) Structures”. Gazi University Journal of Science 26/3 (October 1, 2013): 501-508. https://izlik.org/JA36UM28ZJ.
JAMA 1.Tataroğlu A. Dielectric permittivity, ac conductivity and electric modulus properties of metal/ferroelectric/semiconductor (MFS) structures. Gazi University Journal of Science. 2013;26:501–508.
MLA Tataroğlu, Adem. “Dielectric Permittivity, Ac Conductivity and Electric Modulus Properties of Metal Ferroelectric Semiconductor (MFS) Structures”. Gazi University Journal of Science, vol. 26, no. 3, Oct. 2013, pp. 501-8, https://izlik.org/JA36UM28ZJ.
Vancouver 1.Adem Tataroğlu. Dielectric permittivity, ac conductivity and electric modulus properties of metal/ferroelectric/semiconductor (MFS) structures. Gazi University Journal of Science [Internet]. 2013 Oct. 1;26(3):501-8. Available from: https://izlik.org/JA36UM28ZJ