Analysis of Frequency and Voltage Dependent Electrical Features of Au/Si3N4/p-GaAs (MIS) Device at Room Temperature

Abstract

The investigation presented here deals with the comprehensive analysis of the C-V-f and G/ω-V-f characteristics of the Au/Si3N4/p-GaAs (MIS) device. These measurements were performed at 300 K and covered a frequency of between 10 kHz–1 MHz. The determination of the Rs was facilitated by the use of the conductance method, while the evaluation of the Nss of the MIS device was performed according to the Hill-Coleman method. A noteworthy observation concerns the significant frequency dispersion observed in the C-V-f and G/ω-V-f features of the MIS devices, particularly noticeable at low frequencies, which is attributable to the influence of Rs and Nss. Furthermore, the determination of the high-frequency Cm and Gm/ω involved measurements under both reverse and forward-biased conditions, followed by careful adjustments to mitigate the effects of Rs. This meticulous procedure culminated in the derivation of the true capacitance values inherent in semiconductor structure.

Keywords

• Silicon Nitride (Si3N4)
• MIS Device
• Capacitance
• Conductance
• Series Resistance
• Interface States

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