BibTex RIS Kaynak Göster
Yıl 2019, , 147 - 152, 30.06.2019
https://doi.org/10.17350/HJSE19030000140

Öz

Kaynakça

  • 1. Azzam RMA, Bashara NM. Ellipsometry and Polarised light. North- Holland Physics publishing, Amsterdam, (1987).
  • 2. McIntyre JDE, Aspnes DE. Differential reflection spectroscopy of very thin surface films. Surf Sci 24 (1971) 417.
  • 3. Aspnes DE, Studna AA. High Precision Scanning Ellipsometer. Appl Opt 14 (1975) 220.
  • 4. Shvets VA, Spesivtsev EV, Rykhlitskii SV, Mikhailov NN. Ellipsometry as a high-precision technique for subnanometerresolved monitoring of thin-film structures. Nanotechnologies in Russia 4(3) (2009) 201.
  • 5. Aspnes DE. Abovebandgap optical anisotropies in cubic semiconductors: A visible–near ultraviolet probe of surfaces. J Vac Sci Technol B 3 (1985) 1498.
  • 6. Aspnes DE, Studna AA. Anisotropies in the Above Band-Gap Optical Spectra of Cubic Semiconductors. Phys Rev Lett 54 (1985)1956.
  • 7. Aspnes DE, Colas E, Studna AA, Bhat R, Koza MA, Keramidas VG. Kinetic Limits of Monolayer Growth on (001) GaAs by Organometallic Chemical-vapor Deposition. Phys Rev Lett 61 (1988) 2782.
  • 8. Aspnes DE, Harbison JP, Studna AA, Florez LT. Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs. J Vac Sci Technol A 6 (1988) 1327.
  • 9. Aspnes DE, Harbison JP, Studna AA, Florez LT. Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001). Phys Rev Lett 59 (1987) 1687.
  • 10. Bremer J, Hansen JK, Hunderi O. Electronic anisotropy in the Δ5 Δ1 edge region of Cu(110). Appl Surf Sci 142 (1999). 286.
  • 11. Wang CK, Chao YF. Measurement of optical activity using a photoelastic modulator system. Jpn J App Phys 38 (1999) 941.
  • 12. Kemp JC, Henson GD, Steiner CT, Beardsley IS, Powell ER. The optical polarization of the Sun measured at a sensitivity of parts in ten million. Nature 326 (1987) 270.

Review: An Optical Surface Probe by Reflectance Anisotropy Spectroscopy

Yıl 2019, , 147 - 152, 30.06.2019
https://doi.org/10.17350/HJSE19030000140

Öz

Rface and interface information. RAS measures the difference in reflectance of light eflectance anisotropy spectroscopy RAS is an optical technique to produce surlinearly polarised along two orthogonal axes in the surface at near normal incidence as a function of photon energy. The quantity obtained by RAS is the so-called reflectance anisotropy. Since only the surface is anisotropic, the measured reflectance anisotropy is connected only with the atomic composition of the surface, not of the bulk. This review presents theoretical as well as experimental procedure to explain RAS technique.

Kaynakça

  • 1. Azzam RMA, Bashara NM. Ellipsometry and Polarised light. North- Holland Physics publishing, Amsterdam, (1987).
  • 2. McIntyre JDE, Aspnes DE. Differential reflection spectroscopy of very thin surface films. Surf Sci 24 (1971) 417.
  • 3. Aspnes DE, Studna AA. High Precision Scanning Ellipsometer. Appl Opt 14 (1975) 220.
  • 4. Shvets VA, Spesivtsev EV, Rykhlitskii SV, Mikhailov NN. Ellipsometry as a high-precision technique for subnanometerresolved monitoring of thin-film structures. Nanotechnologies in Russia 4(3) (2009) 201.
  • 5. Aspnes DE. Abovebandgap optical anisotropies in cubic semiconductors: A visible–near ultraviolet probe of surfaces. J Vac Sci Technol B 3 (1985) 1498.
  • 6. Aspnes DE, Studna AA. Anisotropies in the Above Band-Gap Optical Spectra of Cubic Semiconductors. Phys Rev Lett 54 (1985)1956.
  • 7. Aspnes DE, Colas E, Studna AA, Bhat R, Koza MA, Keramidas VG. Kinetic Limits of Monolayer Growth on (001) GaAs by Organometallic Chemical-vapor Deposition. Phys Rev Lett 61 (1988) 2782.
  • 8. Aspnes DE, Harbison JP, Studna AA, Florez LT. Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs. J Vac Sci Technol A 6 (1988) 1327.
  • 9. Aspnes DE, Harbison JP, Studna AA, Florez LT. Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001). Phys Rev Lett 59 (1987) 1687.
  • 10. Bremer J, Hansen JK, Hunderi O. Electronic anisotropy in the Δ5 Δ1 edge region of Cu(110). Appl Surf Sci 142 (1999). 286.
  • 11. Wang CK, Chao YF. Measurement of optical activity using a photoelastic modulator system. Jpn J App Phys 38 (1999) 941.
  • 12. Kemp JC, Henson GD, Steiner CT, Beardsley IS, Powell ER. The optical polarization of the Sun measured at a sensitivity of parts in ten million. Nature 326 (1987) 270.
Toplam 12 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Bölüm Research Article
Yazarlar

Orhan Zeybek Bu kişi benim

Yayımlanma Tarihi 30 Haziran 2019
Yayımlandığı Sayı Yıl 2019

Kaynak Göster

Vancouver Zeybek O. Review: An Optical Surface Probe by Reflectance Anisotropy Spectroscopy. Hittite J Sci Eng. 2019;6(2):147-52.

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