Thermodynamic Bases for Obtaining Crystalline Perfect Silicon from Tin-silicon Solution

Abstract

Silicon epitaxial layers were grown on a silicon (Si<111>) substrate in the range of 1323÷1073 K with initial crystallization temperatures from the silicon-tin (Si-Sn) solution. To determine the forces acting between the silicon nanoclusters in solution and the tin (Sn) particles and the silicon (Si) surface, the dielectric constant values of silicon, tin at selected temperatures were found experimentally. Given the Gibbs energy of the system to obtain the perfect epitaxial layers and structures of the crystal, optimal technological growth conditions are given.

Keywords

• epitaxy
• nanocluster
• crystallization
• solution-melt
• dislocation
• dielectric constant

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