Ag/Aniline blue/n-Si Type Schottky Diode with Organic Dye Interlayers Investigation of Electrical and Photovoltaic Properties

Yıl 2020, Cilt: 1 Sayı: 1, 55 - 62, 22.08.2020

Bahdisen Gezer Can Gezer

Öz

In this study; Polished part n-Si semiconductor together with a donor concentration of 3x1017 /cm, 200 μm thick, was used. After proper chemical cleaning, an Al ohmic contact was made to the lower face of the semiconductor crystal. After the aniline blue dye was coated with methanol and acetone solution on the upper side, the lower surface of the organic layer was contacted. The electrical and interfacial properties of the manufactured Ag/Aniline blue/n-Si/Al Schottky diode, current-voltage (IV) measurement at room temperature under dark and light, and capacitance (CV) and conductance in the frequency range of 100-900 kHz in 100 kHz steps -Voltage (GV) properties were investigated. Some parameters such as barrier height (ɸB) and series resistance (Rs) were obtained from the modified Norde function and Cheung functions using straight feed I-V data. The interface state density (Nss) of the diode was also calculated. In addition, Data obtained as a result of I-V measurements, diode has a good straightening feature.

Anahtar Kelimeler

n-type Si, Aniline blue, Schottky diode, Al, Ag

Organik Boya Ara Katmanlı Ag/Anilin mavisi/n-Si Tipi Schottky Diyot Elektrik ve Fotovoltaik Özelliklerin Araştırılması

Öz

Bu çalışmada, parlatılmış kısım n-Si yarı iletken, 3x1017 /cm donör konsantrasyonu ile birlikte, 200 μm kalınlık kullanılmıştır. Uygun kimyasal temizlemeden sonra, yarı iletken kristalin alt yüzüne bir Al ohm teması yapıldı. Anilin mavisi boyası, üst tarafta metanol ve aseton çözeltisi ile kaplandıktan sonra, organik katmanın alt yüzeyi temas ettirildi. Üretilen Ag/Anilin mavisi/n-Si/Al Schottky diyotunun elektriksel ve arayüzey özellikleri, karanlık ve aydınlıkta oda sıcaklığında akım-voltaj (IV) ölçümü ve 100- frekans aralığında kapasitans (CV) ve iletkenlik 100 kHz'lik adımlarla 900 kHz -Gerilim (GV) özellikleri incelenmiştir. Bariyer yüksekliği (ɸB) ve seri direnç (Rs) gibi bazı parametreler, düz besleme I-V verileri kullanılarak değiştirilmiş Norde fonksiyonu ve Cheung fonksiyonlarından elde edildi. Diyotun arayüz durum yoğunluğu (Nss) da hesaplandı. Ayrıca I-V ölçümleri sonucunda elde edilen veriler, diyotun iyi bir doğrultma özelliğine sahiptir.

Anahtar Kelimeler

n-type Si,, Aniline blue, Schottky diode, Al,, Ag

Kaynakça

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