Properties of the CdSxTe1-x solid solution: As a single product and as a part of the CdS/CdTe solar cell

Abstract

Thin film CdS/CdTe solar cells are promising candidates for large-scale photovoltaics. The CdSxTe1-x solid solution is always formed at the interface between the CdS window layer and CdTe absorber layer due to the intermixing at the interface region. It is confirmed that this interdiffusion process significantly affects the device performance. This occurs through several things of which are changing the bandgap of both CdTe and CdS, which modifies the spectral response of the solar cell, and reducing the lattice mismatch at the CdS/CdTe junction which results in the reduction of the number of interfacial states and recombination centers. This work gives a short review of the properties of this solid solution in two cases; first, when it is produced as a separate product (i.e. powder or thin films), and second when it is part of the solar cell (i.e. created due to interdiffusion or introduced as a layer between CdS and CdTe).

Keywords

• CdS/CdTe solar cells,CdSxTe1-x solid solution,Interdiffusion,Bandgap,Thin films

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