ADVANCING MEMORY DENSITY: A NOVEL DESIGN FOR MULTIPLE-BIT-PER-CELL PHASE CHANGE MEMORY

Abstract

Multiple-bit-per-cell phase-change memory (MPCM) has emerged as a promising solution to address the escalating demands for high-density, low-power, and fast-access memory in modern computing and data storage systems. This paper presents a novel device design aimed at enabling multiple bits per cell in phase-change memory, thereby significantly enhancing memory density while maintaining performance and reliability. Leveraging innovative material compositions and advanced fabrication techniques, the proposed design demonstrates the potential to push the boundaries of memory capacity, efficiency, and scalability. Through comprehensive simulation analysis and performance evaluations, we showcase the feasibility and advantages of the new device design, highlighting its potential to revolutionize memory architectures and meet the evolving needs of next-generation computing systems.

Keywords

• Phase Change Memory
• Multiple-Bit-Per-Cell
• Finite Element Modeling
• Novel Design
• Memory Architecture

References

1. H. S. P. Wong et al., "Phase Change Memory," Proceedings of the IEEE, vol. 98, no. 12, pp. 2201-2227, 2010, doi: 10.1109/jproc.2010.2070050.
2. M. Wuttig and N. Yamada, "Phase-change materials for rewriteable data storage," Nature materials, vol. 6, no. 11, pp. 824-832, 2007.
3. S. Raoux, W. Wełnic, and D. Ielmini, "Phase change materials and their application to nonvolatile memories," Chemical reviews, vol. 110, no. 1, pp. 240-267, 2010.
4. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, "Electronic switching in phase-change memories," IEEE Transactions on Electron Devices, vol. 51, no. 3, pp. 452-459, 2004.
5. G. W. Burr et al., "Phase change memory technology," Journal of Vacuum Science & Technology B, vol. 28, no. 2, pp. 223-262, 2010.
6. S. G. Sarwat, "Materials science and engineering of phase change random access memory," Materials science and technology, vol. 33, no. 16, pp. 1890-1906, 2017.
7. P. Fantini, "Phase change memory applications: the history, the present and the future," Journal of Physics D: Applied Physics, vol. 53, no. 28, p. 283002, 2020.
8. M. Le Gallo and A. Sebastian, "An overview of phase-change memory device physics," Journal of Physics D: Applied Physics, vol. 53, no. 21, p. 213002, 2020.

9. B. Kim et al., "Current status and future prospect of phase change memory," in 2011 9th IEEE International Conference on ASIC, 2011: IEEE, pp. 279-282.
10. O. Zilberberg, S. Weiss, and S. Toledo, "Phase-change memory: An architectural perspective," ACM Computing Surveys (CSUR), vol. 45, no. 3, pp. 1-33, 2013.
11. K. Jiang, S. Li, F. Chen, L. Zhu, and W. Li, "Microstructure characterization, phase transition, and device application of phase-change memory materials," Science and Technology of Advanced Materials, vol. 24, no. 1, p. 2252725, 2023.
12. F. Ding et al., "A review of compact modeling for phase change memory," Journal of Semiconductors, vol. 43, no. 2, p. 023101, 2022.
13. D. Ielmini, S. Lavizzari, D. Sharma, and A. L. Lacaita, "Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation," in 2007 IEEE International Electron Devices Meeting, 2007: IEEE, pp. 939-942.
14. J. Tominaga, "The Design and Application on Interfacial Phase‐Change Memory," physica status solidi (RRL)–Rapid Research Letters, vol. 13, no. 4, p. 1800539, 2019.
15. A. Ehrmann, T. Blachowicz, G. Ehrmann, and T. Grethe, "Recent developments in phase‐change memory," Applied Research, vol. 1, no. 4, p. e202200024, 2022.
16. A. Lotnyk, M. Behrens, and B. Rauschenbach, "Phase change thin films for non-volatile memory applications," Nanoscale Advances, vol. 1, no. 10, pp. 3836-3857, 2019.
17. M. S. Arjunan, S. Durai, and A. Manivannan, "Multilevel Switching in Phase‐Change Photonic Memory Devices," physica status solidi (RRL)–Rapid Research Letters, vol. 15, no. 11, p. 2100291, 2021.
18. A. Gokce et al., "Toward multiple-bit-per-cell memory operation with stable resistance levels in phase change nanodevices," IEEE Transactions on Electron Devices, vol. 63, no. 8, pp. 3103-3108, 2016.
19. İ. Çinar, "Finite element modelling of a nanoscale semiconductor device to develop multiple bit per cell media," Avrupa Bilim ve Teknoloji Dergisi, no. 19, pp. 84-91, 2020.
20. B. Liu, T. Zhang, J. Xia, Z. Song, S. Feng, and B. Chen, "Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory," Semiconductor science and technology, vol. 19, no. 6, p. L61, 2004.
21. Y. Gu, Z. Song, T. Zhang, B. Liu, and S. Feng, "Novel phase-change material GeSbSe for application of three-level phase-change random access memory," Solid-state electronics, vol. 54, no. 4, pp. 443-446, 2010.
22. K. F. Kao, C. M. Lee, M. J. Chen, M. J. Tsai, and T. S. Chin, "Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory," Advanced materials, vol. 21, no. 17, pp. 1695-1699, 2009.
23. F. Rao, Z. Song, L. Wu, B. Liu, S. Feng, and B. Chen, "Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films," Applied Physics Letters, vol. 91, no. 12, 2007.
24. F. Rao et al., "Multilevel data storage characteristics of phase change memory cell with doublelayer chalcogenide films (Ge2Sb2Te5 and Sb2Te3)," Japanese journal of applied physics, vol. 46, no. 1L, p. L25, 2007.
25. S.-H. Hong, H. Lee, K.-I. Kim, Y. Choi, and Y.-K. Lee, "Fabrication of multilevel switching high density phase change data recording using stacked GeTe/GeSbTe structure," Japanese journal of applied physics, vol. 50, no. 8R, p. 081201, 2011.
26. S.-H. Hong, H. Lee, Y. Choi, and Y.-K. Lee, "Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure," Current Applied Physics, vol. 11, no. 5, pp. S16-S20, 2011.
27. J. Reifenberg, E. Pop, A. Gibby, S. Wong, and K. Goodson, "Multiphysics modeling and impact of thermal boundary resistance in phase change memory devices," in Thermal and Thermomechanical Proceedings 10th Intersociety Conference on Phenomena in Electronics Systems, 2006. ITHERM 2006., 2006: IEEE, pp. 106-113.
28. A. Cywar, J. Li, C. Lam, and H. Silva, "The impact of heater-recess and load matching in phase change memory mushroom cells," Nanotechnology, vol. 23, no. 22, p. 225201, 2012.
29. D.-H. Kim, F. Merget, M. Först, and H. Kurz, "Three-dimensional simulation model of switching dynamics in phase change random access memory cells," Journal of Applied Physics, vol. 101, no. 6, 2007.
30. I. Cinar et al., "Three dimensional finite element modeling and characterization of intermediate states in single active layer phase change memory devices," Journal of Applied Physics, vol. 117, no. 21, 2015.
31. C. Ma, J. He, J. Lu, J. Zhu, and Z. Hu, "Modeling of the temperature profiles and thermoelectric effects in phase change memory cells," Applied Sciences, vol. 8, no. 8, p. 1238, 2018.
32. J. Lee, M. Asheghi, and K. E. Goodson, "Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling," Nanotechnology, vol. 23, no. 20, p. 205201, 2012.
33. A. Faraclas, G. Bakan, F. Dirisaglik, N. E. Williams, A. Gokirmak, and H. Silva, "Modeling of thermoelectric effects in phase change memory cells," IEEE Transactions on Electron Devices, vol. 61, no. 2, pp. 372-378, 2014.
34. P. Fiflis, L. Kirsch, D. Andruczyk, D. Curreli, and D. N. Ruzic, "Seebeck coefficient measurements on li, sn, ta, mo, and w," Journal of nuclear materials, vol. 438, no. 1-3, pp. 224-227, 2013.
35. C. Peng, L. Cheng, and M. Mansuripur, "Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media," Journal of Applied Physics, vol. 82, no. 9, pp. 4183-4191, 1997.
36. V. D. Bruggeman, "Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen," Annalen der physik, vol. 416, no. 7, pp. 636-664, 1935.