ADVANCING MEMORY DENSITY: A NOVEL DESIGN FOR MULTIPLE-BIT-PER-CELL PHASE CHANGE MEMORY

Yıl 2024, Cilt: 12 Sayı: 3, 773 - 782, 01.09.2024

İbrahim Çinar

https://doi.org/10.36306/konjes.1507600

Öz

Multiple-bit-per-cell phase-change memory (MPCM) has emerged as a promising solution to address the escalating demands for high-density, low-power, and fast-access memory in modern computing and data storage systems. This paper presents a novel device design aimed at enabling multiple bits per cell in phase-change memory, thereby significantly enhancing memory density while maintaining performance and reliability. Leveraging innovative material compositions and advanced fabrication techniques, the proposed design demonstrates the potential to push the boundaries of memory capacity, efficiency, and scalability. Through comprehensive simulation analysis and performance evaluations, we showcase the feasibility and advantages of the new device design, highlighting its potential to revolutionize memory architectures and meet the evolving needs of next-generation computing systems.

Anahtar Kelimeler

Phase Change Memory, Multiple-Bit-Per-Cell, Finite Element Modeling, Novel Design, Memory Architecture

Kaynakça

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