In this paper, various physical device simulation of pseudomorphic High Electron Mobility Transistos are realized to show the effect of align parameter on scattering parameters. S parameters are complex numbers,so both real and imaginer part of scattering parameters are plotted with respect to frequency at different align parameters. In all figures, a brief explanation about the change of S parameter with respect to frequency and align parameter are provided. The effect of align parameter, which has a value of 0.4 differ from other align parameter values such as 0.45, 0.5, 0.55 and 0.6 on scattering parameters of the tranistor structure.
PHEMT Scattering Parameters Align Parameter Device Simulation
Birincil Dil | İngilizce |
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Bölüm | Research Articles |
Yazarlar | |
Yayımlanma Tarihi | 31 Aralık 2020 |
Gönderilme Tarihi | 6 Aralık 2020 |
Kabul Tarihi | 30 Aralık 2020 |
Yayımlandığı Sayı | Yıl 2020 Cilt: 1 Sayı: 2 |