The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor

Yıl 2020, Cilt: 1 Sayı: 2, 89 - 96, 31.12.2020

Gökhan Satılmış

Öz

In this paper, various physical device simulation of pseudomorphic High Electron Mobility Transistos are realized to show the effect of align parameter on scattering parameters. S parameters are complex numbers,so both real and imaginer part of scattering parameters are plotted with respect to frequency at different align parameters. In all figures, a brief explanation about the change of S parameter with respect to frequency and align parameter are provided. The effect of align parameter, which has a value of 0.4 differ from other align parameter values such as 0.45, 0.5, 0.55 and 0.6 on scattering parameters of the tranistor structure.

Anahtar Kelimeler

PHEMT, Scattering Parameters, Align Parameter, Device Simulation

Kaynakça

• 1. Ahmad, M., Butt, H. T., Tauqeer, T., & Missous, M. (2012, 11-15 Nov. 2012). DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT). Paper presented at the The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.
• 2. Ahmad, N., Arshad, S., & Missous, M. (2010, 25-27 Oct. 2010). New InP based pHEMT double stage differential to single-ended MMIC low noise amplifiers for SKA. Paper presented at the The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.
• 3. Arshad, S., Mohiuddin, M., Bouloukou, A., & Missous, M. (2008, 12-16 Oct. 2008). Physical Modelling of the Kink Effect in Strained InGaAs/InAlAs pHEMTs. Paper presented at the 2008 International Conference on Advanced Semiconductor Devices and Microsystems.
• 4. Aziz, A. A., & Missous, M. (1996, 25-26 Nov. 1996). InGaP/InGaAs/GaAs pseudomorphic HEMT grown by solid source MBE. Paper presented at the Proceedings of EDMO '96.
• 5. Aziz, A. A., & Missous, M. (1997, 25-25 Nov. 1997). Fabrication and characterisation of AlGaAs/InGaAs/GaAs pseudomorphic HEMT with in-situ epitaxial aluminium grown by MBE. Paper presented at the IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat.
• 6. Güneş, F., & Demirel, S. (2016). Performance characterization of a microwave transistor subject to the noise and matching requirements. International Journal of Circuit Theory and Applications, 44(5), 1012-1028. doi:10.1002/cta.2120
• 7. SATILMIŞ, G., GÜNEŞ, F., & MAHOUTI, P. (2019). Calculation of Scattering Parameters for a MESFET Transistor. Paper presented at the 4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES.
• 8. Satılmış, G., Güneş, F., & Mahouti, P. Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor. n/a(n/a), e2840. doi:https://doi.org/10.1002/jnm.2840
• 9. Dragica Vasileska, S. M. G. (2006). Computational Electronics: Morgan &Claypool Publishers.
• 10. PHEMT High Frequency Analysis. 2020 [cited 2020 17.01.2020]; Available from: https://silvaco.com/examples/tcad/section10/example6/index.html