PVA Kapı dielektrik tabanlı organik ince film transistörlerin performansı üzerindeki solvent etkileri

Yıl 2017, , 1463 - 1468, 01.12.2017

Arif Kösemen

https://doi.org/10.16984/saufenbilder.315161

Öz

Bu çalışmada, üst kapı alt kontak transistörü hazırladık ve
karakterize ettik. Aktif tabaka olarak poli [2-metoksi-5- (2-etilheksiloksi)
-1,4-fenilenevinilen] (MEH: PPV) kapı dielektrik malzemesi olarak Polivinil
alkol (PVA) kullanılmıştır. Cihazların transistör parametreleri üzerinde çözücü
etkisini araştırılmıştır. PVA için çözücü olarak dimetil sülfoksit (DMSO) ve
ultra saf su kullanılmıştır. DMSO'nun mobilite, açma / kapama oranı ve Vth
değerleri gibi transistör parametrelerini olumlu etkilediği açık bir şekilde
görülmüştür. Ultra saf su ve DMSO içinde çözünmüş PVA kullanılarak imal edilen
OFET'lerin out-put ve transfer özellikleri incelenmiştir. OFET'in
hareketliliği, DMSO'nun PVA çözücüsü olarak kullanıldığında artmıştır. Delik
hareketliliği PVA: su bazlı cihazdan 3.07x10-5 cm2 V-1 s-1 ve PVA:DMSO tabanlı
cihazdan 2.17x10-4 cm2 V-1 s-1 olarak bulunmuştur.

Anahtar Kelimeler

Organic kapı dielektriği, OFET, Çözücü etkisi, Organic kapı yalıtkanı, DMSO, MEH:PPV

Solvent effects on the performance of the PVA gate dielectric based organic thin film transistors

Öz

In this study, we prepared top-gate bottom-contact
transistor and characterized.
Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH:PPV) was used as
active layer and Polyvinyl alcohol (PVA) as used gate dielectric material. We
investigated solvent effect on the transistor parameters of the devices.
Dimethyl sulfoxide (DMSO) and ultra-pure water were used as solvent for PVA.
Effect of DMSO on transistor parameters was investigated and clearly seen that
DMSO have positively influence transistor parameters such as mobility, on/off
ratio and Vth values. Output and transfer properties of OFET’s that has been
fabricated by using PVA dissolved in ultra-pure water and DMSO were analayzed.
Mobility of the OFET increased when DMSO used as solvent of PVA. Hole
mobility’s are found as 3.07x10^-5 cm² V⁻¹ s⁻¹
from PVA:water based device and 2.17x10^-4 cm² V⁻¹
s⁻¹ from PVA:DMSO based device.

Anahtar Kelimeler

Organic gate dielectric, OFET, Solvent effect, DMSO, MEH:PPV

Kaynakça

• [1] S. Scheinert, G. Paasch, I. Hörselmann, A. Herasimovich, “Low-cost submicrometer organic fieled effect transistors,” Advances in Polymer Science, vol. 223 pp. 155, 2010.
• [2] Z. Alpaslan, A. Kösemen, O. Örnek, Y. Yerli, E.S. San, TiO2-Based Organic Hybrid Solar Cells with Mn+2 Doping,“International Journal of Photoenergy”,2011, 734618, 8 pages, 2011.
• [3] O. Ornek, “The effect of TiO2 layer annealing medium on efficiency in solar cells in inverted structure prepared by TiO2”, Energy Education Science and Technology Part A: Energy Science and Research, 30(1), 97-102, 2012.
• [4] C. Liao, F. Yan, “Organic semiconductors in organic thin-film transistor-based chemical and biological sensors,” Polymer reviews, vol.53, pp. 352, 2013.
• [5] Chong-An Di, Y. Liu, G. Yu, D. Zhu, “Interface engineering: an effective approach toward high-performance organic field-effect transistors”, Accounts of chemical research, vol. 42 pp. 1573, 2009.
• [6] L.Torsi, M. Magliulo, K. Manoli, G. Palazzo, “Organic field-effect transistor sensors: a tutorial review,” Chemical Society reviews, vol. 42, pp. 8612-8628, 2013.
• [7] A. N. Sokolov, B. C-K. Tee, C. J. Bettinger, J. B.-H. Tok, Z. Bao, “Mechanistic Considerations of Bending Strain Effects within Organic Semiconductors on Polymer Dielectrics,” Advanced functional materials, vol. 45, pp. 371, 2012.
• [8] A. Kösemen, S. E. Sana, M. Okutana, Z. Doğruyol, A. Demir, Y. Yerli, B. Şengez, E. Başaran, F. Yılmaz, “A novel field effect transistor with dielectric polymer gel”, Microelectronic Engineering vol. 88 pp. 17–20, 2011.
• [9] Z. Alpaslan Kösemen, A. Kösemen, S. Öztürk, B. Canimkurbey, S. E. San, Y. Yerli, A. V. Tunç, “Effect of intrinsic polymer properties on the photo sensitive organic field-effect transistors (Photo-OFETs)”, Microelectronic Engineering, vol. 161, pp. 36–42, 2016.
• [10] F. Todescato, R. Capelli, F. Dinelli, M. Murgia, N. Camaioni, M. Yang, R. Bozio, M. Muccini, ” Correlation between Dielectric/Organic Interface Properties and Key Electrical Parameters in PPV-based OFETs”, Journal of Physical Chemistry B, vol. 112, pp. 10130–10136, 2008.
• [11] G. Horowitz, X. Peng, D. Fichou, F. Garnier, “The oligothiophene‐based field‐effect transistor: How it works and how to improve it”, Journal of Applied Physics, vol. 67, pp. 528, 1990.
• [12] F. Dinelli, M. Murgia, P. Levy, M. Cavallini, D. de Leeuw, F. Biscarini, “Spatially correlated charge transport in organic thin film transistors”, Physical Review Letter, vol. 92, pp. 6802, 2004.
• [13] K.-Jun Baeg, A. Facchettic, Y.-Young Noh, “Effects of gate dielectrics and their solvents on characteristics of solution-processed N-channel polymer field-effect transistors”, Journal of Materials Chemistry, vol. 22, pp. 21138, 2012.
• [14] L. L. Chua, J. Zaumseil, J. F. Chang, E. C. W. Ou, P. K. H. Ho, H. Sirringhaus and R. H. Friend, “General observation of n-type field-effect behaviour in organic semiconductors”, Nature, vol. 434, pp. 194, 2005.
• [15] M.-H. Yoon, C. Kim, A. Facchetti and T. J. Marks, “Gate dielectric chemical structure-organic field-effect transistor performance correlations for electron, hole, and ambipolar organic semiconductors”, Journal of American Chemical Society, vol. 128, pp. 12851, 2006.
• [16] Y.-Y. Noh and H. Sirringhaus, “Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors”, Organic, Electronic, vol. 10, pp. 174, 2009.
• [17] K.-J. Baeg, D. Khim, S.-W. Jung, J. B. Koo, I.-K. You, Y.-C. Nah, D.-Y. Kim and Y.-Y. Noh, “Polymer Dielectrics and Orthogonal Solvents Effects for High Performance Inkjet-Printed Top-Gated P-channel Polymer Field -Effect Transistors”, ETRI Journal, vol. 33, pp. 887, 2011.
• [18] C. D. Dimitrakopoulos and P. R. L. Malenfant, “Organic thin film transistors for large area electronics”, Advanced. Materials, vol. 14, pp. 99117, 2002.
• [19] F. Antonio, M. H. Yoon and T. J. Marks, “Gate dielectrics for organic field‐effect transistors: New opportunities for organic electronics”, Advanced. Materials, vol. 17, pp. 17051725, 2005.
• [20] Veres, J., Ogier, S., G Lloyd, “Gate Insulators in Organic Field-Effect Transistors”, Chemistry of Materials, vol. 16, pp. 4543, 2004.