hBN-SiC KOMPOZİTLERDE SICAKLIĞIN SiC TANE BOYUNUNA ETKİSİ

Yıl 2018, , 695 - 702, 01.04.2018

Zuhal Yılmaz , Nuran Ay

https://doi.org/10.16984/saufenbilder.348993

Öz

 Bu çalışmada hekzagonal bor nitrür- silisyum
karbür (hBN-SiC) kompozit sentezinde sıcaklığın SiC tane boyutu üzerine etkisi
araştırılmıştır.  Numunelerin SPS ile
1700^oC, 1800^oC, 1900^oC ve 2000^oC’de
farklı sıcaklıklarda 50MPa basınç altında 15dak sinterleme işlemi
gerçekleştirilmiştir. Sinterleme sıcaklığının SiC tane boyutu üzerine etkisinin
belirlenmesi için İmageJ programı ile tane boyut ölçümleri gerçekleştirilerek normal dağılım fonksiyonu ile
tane boyut dağılımları tespit edilmiştir. 1700^oC’den 1900^oC’ye
sıcaklık artırıldığında h-BN miktarında %0,9’luk bir artış gözlenmiştir ve 2000^oC’de
ise değişmemiştir. SiC ortalama tane boyutu 1700^oC’den 2000^oC’ye
sıcaklık artırıldığında 1,09µm’den 1,96µm’ye artmıştır. Tane boyut
dağılımlarının standart sapma değerleri ise 1700^oC’de 0,445 iken
2000^oC’de 0,812 değerine arttığı gözlenmiştir. Sıcaklığa bağlı olarak
tane boyut dağılımı artmaktadır. hBN
fazının güçlü kovalent bağları ve plaka şeklinde yapıya sahip olmasından dolayı
hBN’nin zayıf sinterlenebilitesi nedeniyle SiC tane büyümesini yavaşlattığı
söylenebilir.

Anahtar Kelimeler

hBN, SiC, kompozit, tane boyutu, özellik

Effect of temperature on SiC grain size in hBN-SiC composites

Öz

In this study, the effect of temperature on
the SiC grain size was investigated in the synthesis of hexagonal boron
nitride-silicon carbide (hBN-SiC) composites.  Samples were sintered
at 1700^oC, 1800^oC, 1900^oC and 2000^oC,
under 50MPa pressure for 15 minutes by spark plasma sintering (SPS). In order
to determine the effect of sintering temperature on the SiC grain size, grain
sizes were measured by ImageJ program. Grain size distributions were determined
by using normal distribution function. When the temperature was increased from
1700°C to 1900°C, the amount of h-BN increased by 0.9% and remained unchanged
at 2000°C. When the temperature was increased from 1700°C to 2000°C, the
average grain size of SiC increased from 1.9 μm to 1.96 μm. The standard
deviation values ​​of grain size distribution increased from 0,445 at 1700°C to
0,812 at 2000°C. Depending on the temperature, the grain size distribution has
increased. Due to the strong covalent bonds and plate-like structure of hBN, it
has poor sinterability. Because of this feature, it can be said that the growth
of SiC grains is slowed down by hBN.

Anahtar Kelimeler

hBN, SiC, composite, SPS, grain size

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