The continuous
development of electronic device technologies allows more value-added products
to be processed. This increases the need for alternative and economical
semiconductor materials. It is possible to reduce the cost of semiconductor
technology and make it easily accessible with thin films. ZnO thin films have a
wide range of applications from sensors to optoelectronic devices, from biomedical
applications to wearable product technology. In this study, ZnO thin films were
developed by using Sol-Gel Spin Coating method which is simpler than other
methods and by using low cost Sol-Gel Magnetic Spin Coating method which will
be used for the first time in literature. Some physical properties of ZnO thin
films produced by doping 1%, 3% and 5% Al were examined using X-Ray Diffraction
(XRD) Device, Field Emission Scanning Electron Microscope (FESEM) and UV-Vis
Spectrophotometer. When structural properties were examined, it was seen that
preferential orientation changed and grain size values increased as Al doping
amount increased. When the surface properties were examined, it was seen that a
homogeneous coating was formed on the litter with the technique used. In
addition, FESEM images prove that grain size values increase as the amount of
doping increases. It was determined that the band gap values of thin films
whose optical properties were examined decreased as the amount of doping
increased. As it can be understood from these results, this thin film
production technique, which is used for the first time in the literature, is
able to produce doped thin films more easily and economically.
Birincil Dil | İngilizce |
---|---|
Konular | Metroloji,Uygulamalı ve Endüstriyel Fizik |
Bölüm | Araştırma Makalesi |
Yazarlar | |
Yayımlanma Tarihi | 1 Şubat 2020 |
Gönderilme Tarihi | 11 Eylül 2019 |
Kabul Tarihi | 21 Kasım 2019 |
Yayımlandığı Sayı | Yıl 2020 |
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.