Optimization of Back-Surface Field for Crystalline Silicon Solar Cells and Estimating the Firing Temperature depending on the Amount of Printed Aluminum

Yıl 2020, Cilt: 24 Sayı: 4, 605 - 614, 01.08.2020

İmran Kanmaz Abdullah Üzüm

https://doi.org/10.16984/saufenbilder.650790

Cited By: 2

Öz

Optimization of the back surface field (BSF) for crystalline silicon solar cells was carried out by Afors-Het simulation software. Thickness and doping concentration parameters were optimized and electrical parameters of solar cells both with BSF and non-BSF were analyzed. The optimum BSF thickness and doping concentration for the crystalline silicon solar cell were determined as 7 µm and 1x1019 cm-3, respectively. A special attention was given to the estimation of peak firing temperature considering the printing amount of aluminum paste in order to form an optimal BSF by the calculations using Al-Si binary phase diagram. It was concluded that the temperature of up to 950oC should be established if an amount of 3 mg/cm2 printed aluminum was used to achieve BSF thickness of 7 µm, where 775 oC would be enough when the amount of aluminum is 8 mg/cm2.

Anahtar Kelimeler

Afors-Het, back surface field, fire through, silicon solar cell

Kaynakça

• [1] M. M. Desa et al., "Silicon back contact solar cell configuration: A pathway towards higher efficiency," Renewable and Sustainable Energy Reviews, vol. 60, pp. 1516-1532, 2016.
• [2] S. Tobbeche and M. N. Kateb, "Simulation and Optimization of Silicon Solar Cell Back Surface Field," Materials Science, vol. 21, no. 4, pp. 491-496, 2015.
• [3] A. Kaminski et al., "Aluminium BSF in silicon solar cells," Solar Energy Materials and Solar Cells, vol. 72, no. 1-4, pp. 373-379, 2002.
• [4] M. C. Raval and S. M. Reddy, "Industrial Silicon Solar Cells," in Solar Cells: IntechOpen, 2019.
• [5] N. Balaji, M. C. Raval, and S. Saravanan, "Review on Metallization in Crystalline Silicon Solar Cells," in Solar Cells: IntechOpen, 2019.
• [6] H. Yin, K. Tang, J. Zhang, W. Shan, X. Huang, and X. Shen, "Bifacial n-type silicon solar cells with selective front surface field and rear emitter," Solar Energy Materials and Solar Cells, vol. 208, p. 110345, 2020.
• [7] R. Varache, C. Leendertz, M. Gueunier-Farret, J. Haschke, D. Muñoz, and L. Korte, "Investigation of selective junctions using a newly developed tunnel current model for solar cell applications," Solar Energy Materials and Solar Cells, vol. 141, pp. 14-23, 2015.
• [8] M. Schmidt et al., "Physical aspects of a-Si: H/c-Si hetero-junction solar cells," Thin Solid Films, vol. 515, no. 19, pp. 7475-7480, 2007.
• [9] M. H. Vishkasougheh and B. Tunaboylu, "Simulation of high efficiency silicon solar cells with a hetero-junction microcrystalline intrinsic thin layer," Energy conversion and management, vol. 72, pp. 141-146, 2013.
• [10] N. Dwivedi, S. Kumar, A. Bisht, K. Patel, and S. Sudhakar, "Simulation approach for optimization of device structure and thickness of HIT solar cells to achieve∼ 27% efficiency," Solar energy, vol. 88, pp. 31-41, 2013.
• [11] T. Lauinger, J. Schmidt, A. G. Aberle, and R. Hezel, "Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation," Applied physics letters, vol. 68, no. 9, pp. 1232-1234, 1996.
• [12] J. G. Fossum, "Physical operation of back-surface-field silicon solar cells," IEEE Transactions on Electron Devices, vol. 24, no. 4, pp. 322-325, 1977.
• [13] S. Riegel, S. Gloger, B. Raabe, and G. Hahn, "Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness," in 24th European Photovoltaic Solar Energy Conference, 2009, pp. 1596-1599.
• [14] J. Szlufcik, S. Sivoththaman, J. Nlis, R. P. Mertens, and R. Van Overstraeten, "Low-cost industrial technologies of crystalline silicon solar cells," Proceedings of the IEEE, vol. 85, no. 5, pp. 711-730, 1997.
• [15] L. J. Caballero, "Contact definition in industrial silicon solar cells," Solar Energy, pp. 375-398, 2010.
• [16] F. Huster, "Aluminum-back surface field: bow investigation and elimination," in 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, pp. 635-638, 2005.
• [17] J. Murray and A. McAlister, "The Al-Si (aluminum-silicon) system," Bulletin of alloy phase diagrams, vol. 5, no. 1, p. 74, 1984.
• [18] M. B. Djurdjević, S. Manasijević, Z. Odanović, and N. Dolić, "Calculation of liquidus temperature for aluminum and magnesium alloys applying method of equivalency," Advances in Materials Science and Engineering, vol. 2013, 2013.
• [19] I. Cesar et al., "Industrial application of uncapped Al 2 O 3 and firing-through Al-BSF in open rear passivated solar cells," in 2011 37th IEEE Photovoltaic Specialists Conference, pp. 001405-001410: IEEE, 2011.
• [20] J. Eguren, J. Del Alamo, and A. Luque, "Optimisation of p+ doping level of n+-p-p+ bifacial bsf solar cells by ion implantation," Electronics Letters, vol. 16, no. 16, pp. 633-634, 1980.
• [21] M. Barbes, M. Quintana, L. Verdeja, and R. Gonzalez, "Microstructures of a pressure die cast Al-8.5% Si-3.5% Cu alloy," Kovove Mater, vol. 55, pp. 89-96, 2017.
• [22] A. Sharma and J. P. Jung, "Possibility of Al-Si Brazing Alloys for Industrial Microjoining Applications," Journal of the Microelectronics and Packaging Society, vol. 24, no. 3, pp. 35-40, 2017.
• [23] M. Haghshenas and J. Jamali, "Assessment of circumferential cracks in hypereutectic Al-Si clutch housings," Case Studies in Engineering Failure Analysis, vol. 8, 12/01 2016.