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Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures

Yıl 2020, Cilt: 24 Sayı: 6, 1232 - 1247, 01.12.2020
https://doi.org/10.16984/saufenbilder.748315

Öz

A three-inch-diameter high quality CdTe thin film was grown on a GaAs (211)B substrate by molecular beam epitaxy (MBE) in ultra-high vacuum conditions. The CdTe/GaAs (211)B heterostructure was then cut into several sample pieces. A few as-grown sample pieces were subjected to chemical etching solutions which created etch pits on the surface. The scanning electron microscopy images of such samples were used to calculate the etch pit densities on the surface. In addition, several as-grown samples were subjected to chemical polishing treatments under different conditions to quantify the removal of O and Te-O structures from the surface. Atomic force microscopy was used to determine as-grown and polished surface morphology and the polish rate of chemical solutions. A study of the surface stoichiometry and the chemical composition of the as-grown and polished CdTe (211)B surfaces were carried out by using X-ray photoelectron spectroscopy. Bulk structural qualities of the as-grown and polished samples were studied in terms of the vibrational and phonon modes via confocal Raman spectroscopy. From a comparative analyses of the results, the best chemical polishing conditions for the MBE-grown CdTe (211)B heterostructure were determined.

Teşekkür

We would like to thank Orhan Öztürk for his help in XRD measurements. We are also thankful to Gülnur Aygün and Lütfi Özyüzer for the help they provided especially with the XPS measurements. Additionally, we thank IYTE Material Research Center staff, especially Emine Bakali, for obtaining SEM images. We are deeply grateful to Yusuf Selamet who played a pivotal role in all the studies mentioned in this work. Finally, we are grateful to SSM (Undersecretariat for Defence Industries of Turkey) and ASELSAN for their financial support.

Kaynakça

  • ] M. Niraula, K. Yasuda, H. Ohnishi, H. Takahashi, K. Eguchi, K. Noda, and Y. Agata, “Direct growth of high-quality thick CdTe epilayers on Si (211) substrates by metalorganic vapor phase epitaxy for nuclear radiation detection and imaging,” J. Electron. Mater. vol.35, no. 6, pp. 1257–1261, 2006.
  • M. Niraula, K. Yasuda, Y. Nakanishi, K. Uchida, T. Mabuchi, Y. Agata, and K. Suzuki, J. Electron. Mater. vol. 33, pp. 645–650, 2004.
  • H. C. Chou, A. Rohatgi, N. M. Jokerst, E. W. Thomas, and S. Kamra, “Copper migration in cdte heterojunction solar cells”, J. Electron. Mater. vol. 25, no. 7, pp. 1093–1098, 1996.
  • M. Y. Simmons, H. M. Al Allak, A. W. Brinkman, & K. Durose, “Electrical and optical characterisation of epitaxial ZnTe/CdTe/CdS and ZnTe/CdTe/GaAs p-i-n solar cell structures grown by metalorginic vapour phase epitaxy”, J. Cryst. Growth, vol. 117, no. 4, pp. 959–963, 1992.
  • S.-I. Mho, S. Wen, M. Jung, and I.-H. Yeo, “CdTe/GaAs Nanodot Arrays and Carbon Nanotubes Prepared Utilizing Nanoporous Alumina Templates”, J. Korean Phys. Soc. vol. 52, no. 5, pp. 1355–1358, 2008.
  • L. A. Kosyachenko, V. M. Sklyarchuk, O. V. Sklyarchuk, and O. L. Maslyanchuk, “Band gap of CdTe and Cd0.9Zn0.1Te crystals,” Semiconductors, vol. 45, no. 10, pp. 1273–1280, 2011.
  • J. P. Faurie, R. Sporken, Y. P. Chen, M. D. Lange, and S. Sivananthan, “Heteroepitaxy of CdTe on GaAs and silicon substrates”, Mater. Sci. Eng. B, vol. 16, no. 1, pp. 51–56, 1993.
  • T. J. de Lyon, R. D. Rajavel, J. A. Vigil, J. E. Jensen, O. K. Wu, C. A. Cockrum, S. M. Johnson, G. M. Venzor, S. L. Bailey, I. Kasai, W. L. Ahlgren, and M. S. Smith, “Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications,” J. Electron. Mater., vol. 27, no. 6, pp. 550–555, 1998.
  • N. Otsuka, L. A. Kolodziejski, R. L. Gunshor, S. Datta, R. N. Bicknell, and J. F. Schetzina, “High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces”, Appl. Phys. Lett., vol. 46, no. 9, pp. 860–862, 1985.
  • M. D. Lange, R. Sporken, K. K. Mahavadi, J. P. Faurie, Y. Nakamura, and N. Otsuka, “Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates”, Appl. Phys. Lett., vol. 58, no. 18, pp. 1988–1990, 1991.
  • A. Zur and T. C. McGill, “Lattice match: An application to heteroepitaxy”, J. Appl. Phys., vol. 55, no. 2, pp. 378–386, 1984.
  • R. N. Bicknell, R. W. Yanka, N. C. Giles, J. F. Schetzina, T. J. Magee, C. Leung, and H. Kawayoshi, “Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy”, Appl. Phys. Lett., vol. 44, no. 3, pp. 313–315, 1984.
  • M. Carmody, A. Yulius, D. Edwall, D. Lee, E. Piquette, R. Jacobs, D. Benson, A. Stoltz, J. Markunas, A. Almeida, and J. Arias, “Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates,” J. Electron. Mater., vol. 41, no. 10, pp. 2719–2724, 2012.
  • F. A. Ponce, R. Sinclair, and R. H. Bube, “Native tellurium dioxide layer on cadmium telluride: A high‐resolution electron microscopy study,” Appl. Phys. Lett., vol. 39, no. 12, pp. 951–953, 1998.
  • R. Zia, F. Saleemi, S. Naseem, and Z. Kayani, “Study the efficiency of single crystal CdTe/ZnCdS solar cell at various temperatures and illumination levels,” Energy Reports, vol. 1, no. 1, pp. 58–61, 2015.
  • J. G. Werthen, J. P. Haring, A. L. Fahrenbruch, and R. H. Bube, “Surface effects on metal/CdTe junctions and CdTe heterojunctions,” J. Phys. D. Appl. Phys., vol. 16, no. 12, pp. 2391–2404, 1983.
  • K. D. Dobson, P. D. Paulson, B. E. McCandless, and R. W. Birkmire, “The Dynamics of Cadmium Telluride Etching”, Mater. Res. Soc. Symp. Proc., vol. 763, no. B3.1, p. 107-118, 2003.
  • P. Moravec, V. G. Ivanits’ka, J. Franc, Z. F. Tomashik, V. M. Tomashik, K. Mašek, P. I. Feychuk, L. P. Shcherbak, P. Höschl, R. Grill, and J. Walter, “Chemical Interaction of CdTe and CdZnTe with Aqueous Solutions of H2O2-HI-Tartaric Acid”, J. Electron. Mater. vo. 38, no. 8, pp. 1645–1651, 2009.
  • V. G. Ivanits’ka, P. Moravec, J. Franc, V. M. Tomashik, Z. F. Tomashik, K. Mašek, P. S. Chukhnenko, P. Höschl, and J. Ulrych, “Chemical Polishing of CdTe and CdZnTe in Iodine–Methanol Etching Solutions,” J. Electron. Mater., vol. 40, no. 8, pp. 1802–1808, 2011.
  • V. G. Ivanits’ka, P. Moravec, V. M. Tomashik, K. Mašek, Z. F. Tomashik, J. Franc, R. Grill, and P. Höschl, “A Slightly Oxidizing Etchant for Polishing of CdTe and CdZnTe Surfaces,” J. Electron. Mater., vol. 42, no. 11, pp. 3059–3065, 2013.
  • P. Moravec, Z. F. Tomashik, V. G. Ivanits’ka, V. M. Tomashik, J. Franc, K. Mašek, and P. Höschl, “Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals” J. Electron. Mater. vol. 41, no. 10, pp. 2838–2845, 2012.
  • Y. S. Wu, C. R. Becker, A. Waag, R. Schmiedl, S. Einfeldt, and G. Landwehr, “Oxygen on the (100) CdTe surface,” J. Appl. Phys., vol. 73, no. 11, pp. 7385–7388, 1993.
  • E. Bakali, Y. Selamet, and E. Tarhan, “Effect of Annealing on the Density of Defects in Epitaxial CdTe (211)/GaAs,” J. Electron. Mater., vol. 47, no. 8, pp. 4780–4792, 2018.
  • E. Bilgilisoy, S. Özden, E. Bakali, M. Karakaya, and Y. Selamet, “Characterization of CdTe Growth on GaAs Using Different Etching Techniques,” J. Electron. Mater., vol. 44, no. 9, pp. 3124–3133, 2015.
  • J. Frühauf, E. Gärtner, and S. Krönert, Shape and Functional Elements of the Bulk Silicon Microtechnique, Springer, Berlin/Heidelberg, 2005.
  • W. J. Everson, C. K. Ard, J. L. Sepich, B. E. Dean, G. T. Neugebauer, and H. F. Schaake, “Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy,” J. Electron. Mater., vol. 24, no. 5, pp. 505–51, 1995.
  • E. P. Warekois, M. C. Lavine, A. N. Mariano, and H. C. Gatos, “Crystallographic Polarity in the II‐VI Compounds,” J. Appl. Phys., vol. 33, no. 2, pp. 690–696, 1962.
  • Polat, M., Bilgilisoy, E., Arı, O., Öztürk, O., and Selamet, Y., “Identifying threading dislocations in CdTe films by reciprocal space mapping and defect decoration etching”, Journal of Applied Physics. vol. 124, no. 8, pp. 085710 1-7, 2018.
  • J. A. Garcia, A. Remón, V. Muñoz, and R. Triboulet, “Photoluminescence study of radiative transitions in ZnTe bulk crystals,” J. Cryst. Growth, vol. 191, no. 4, pp. 685–691, 1998.
  • Z. C. Feng, S. Perkowitz, J. M. Wrobel, and J. J. Dubowski, “Outgoing multiphonon resonant Raman scattering and luminescence near the E0 + Δ0 gap in epitaxial CdTe films,” Phys. Rev. B, vol. 39, no. 17, pp. 12997–13000, 1989.
  • L. He, X. Fu, Q. Wei, W. Wang, L. Chen, Y. Wu, X. Hu, J. Yang, Q. Zhang, R. Ding, X. Chen, and W. Lu, “MBE HgCdTe on Alternative Substrates for FPA Applications,” J. Electron. Mater., vol. 37, no. 9, pp. 1189–1199, 2008.
  • X. J. Wang, Y. B. Hou, Y. Chang, C. R. Becker, R. F. Klie, and S. Sivananthan, “Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy,” J. Electron. Mater., vol. 38, no. 8, pp. 1776–1780, 2009.
  • K. Nakagawa, K. Maeda, and S. Takeuchi, “Observation of dislocations in cadmium telluride by cathodoluminescence microscopy,” Appl. Phys. Lett., vol. 34, no. 9, pp. 574–575, 1979.
  • R. Bommena, T. Seldrum, L. Samain, R. Sporken, S. Sivananthan, and S. R. J. Brueck, “Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates,” J. Electron. Mater., vol. 37, no. 9, pp. 1255–1260, 2008.
  • S. S. Choi, and G. Lucovsky, “Native oxide formation on CdTe,”, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., vol.6, no. 4, pp. 1198-1203, 1988.
  • R. A. Muñoz Hernández, A. Calderón, A. Cruz-Orea, S. A. Tomas, F. Sánchez Sinencio, and G. Peña Rodriguez, “Caracterización Óptica de Centros Absorbentes en Películas Biopoliméricas Obtenidas de Pericarpio de Maíz,” Superficies y Vacio, vol. 8, no.1, pp. 59–63, 1999.
  • A. Mooradian, “Light Scattering from Single-Particle Electron Excitations in Semiconductors,”, Phys. Rev. Lett., vol. 20, no. 20, pp. 1102–1104, 1968.
  • H. G. Schulze, C. G. Atkins, D. V. Devine, M. W. Blades, and R. F. B. Turner, “Fully Automated Decomposition of Raman Spectra into Individual Pearson's Type VII Distributions Applied to Biological and Biomedical Samples,” Appl. Spectrosc., vol. 69, no. 1, pp. 26–36, 2015.
  • A. Lusson, J. Wagner, and M. Ramsteiner, “Resonant Raman scattering of In+‐implanted CdTe and Cd0.23Hg0.77Te,” Appl. Phys. Lett., vol. 54, no. 18, pp. 1787–1789, 1989.
  • A. Cantarero, C. Trallero-Giner, and M. Cardona, “Excitons in one-phonon resonant Raman scattering: Fröhlich and interference effects,” Phys. Rev. B, vol. 40, no. 18, pp. 12290–12295, 1989.
  • J. Menéndez, M. Cardona, and L. K. Vodopyanov, “Resonance Raman scattering by LO phonons in CdxHg1-xTe at the E0 + Δ0 gap,” Phys. Rev. B, vol 31, no. 6, pp. 3705–3711, 1985.
  • S. S. Islam, S. Rath, K. P. Jain, S. C. Abbi, C. Julien, and M. Balkanski, “Forbidden one-LO-phonon resonant Raman scattering and multiphonon scattering in pure CdTe crystals,” Phys. Rev. B, vol. 46, no. 8, pp. 4982–4985, 1992.
  • S. H. Shin, J. Bajaj, L. A. Moudy, and D. T. Cheung, “Characterization of Te precipitates in CdTe crystals,” Appl. Phys. Lett., vol. 43, no. 1, pp. 68–70, 1983.
Yıl 2020, Cilt: 24 Sayı: 6, 1232 - 1247, 01.12.2020
https://doi.org/10.16984/saufenbilder.748315

Öz

Kaynakça

  • ] M. Niraula, K. Yasuda, H. Ohnishi, H. Takahashi, K. Eguchi, K. Noda, and Y. Agata, “Direct growth of high-quality thick CdTe epilayers on Si (211) substrates by metalorganic vapor phase epitaxy for nuclear radiation detection and imaging,” J. Electron. Mater. vol.35, no. 6, pp. 1257–1261, 2006.
  • M. Niraula, K. Yasuda, Y. Nakanishi, K. Uchida, T. Mabuchi, Y. Agata, and K. Suzuki, J. Electron. Mater. vol. 33, pp. 645–650, 2004.
  • H. C. Chou, A. Rohatgi, N. M. Jokerst, E. W. Thomas, and S. Kamra, “Copper migration in cdte heterojunction solar cells”, J. Electron. Mater. vol. 25, no. 7, pp. 1093–1098, 1996.
  • M. Y. Simmons, H. M. Al Allak, A. W. Brinkman, & K. Durose, “Electrical and optical characterisation of epitaxial ZnTe/CdTe/CdS and ZnTe/CdTe/GaAs p-i-n solar cell structures grown by metalorginic vapour phase epitaxy”, J. Cryst. Growth, vol. 117, no. 4, pp. 959–963, 1992.
  • S.-I. Mho, S. Wen, M. Jung, and I.-H. Yeo, “CdTe/GaAs Nanodot Arrays and Carbon Nanotubes Prepared Utilizing Nanoporous Alumina Templates”, J. Korean Phys. Soc. vol. 52, no. 5, pp. 1355–1358, 2008.
  • L. A. Kosyachenko, V. M. Sklyarchuk, O. V. Sklyarchuk, and O. L. Maslyanchuk, “Band gap of CdTe and Cd0.9Zn0.1Te crystals,” Semiconductors, vol. 45, no. 10, pp. 1273–1280, 2011.
  • J. P. Faurie, R. Sporken, Y. P. Chen, M. D. Lange, and S. Sivananthan, “Heteroepitaxy of CdTe on GaAs and silicon substrates”, Mater. Sci. Eng. B, vol. 16, no. 1, pp. 51–56, 1993.
  • T. J. de Lyon, R. D. Rajavel, J. A. Vigil, J. E. Jensen, O. K. Wu, C. A. Cockrum, S. M. Johnson, G. M. Venzor, S. L. Bailey, I. Kasai, W. L. Ahlgren, and M. S. Smith, “Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications,” J. Electron. Mater., vol. 27, no. 6, pp. 550–555, 1998.
  • N. Otsuka, L. A. Kolodziejski, R. L. Gunshor, S. Datta, R. N. Bicknell, and J. F. Schetzina, “High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces”, Appl. Phys. Lett., vol. 46, no. 9, pp. 860–862, 1985.
  • M. D. Lange, R. Sporken, K. K. Mahavadi, J. P. Faurie, Y. Nakamura, and N. Otsuka, “Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates”, Appl. Phys. Lett., vol. 58, no. 18, pp. 1988–1990, 1991.
  • A. Zur and T. C. McGill, “Lattice match: An application to heteroepitaxy”, J. Appl. Phys., vol. 55, no. 2, pp. 378–386, 1984.
  • R. N. Bicknell, R. W. Yanka, N. C. Giles, J. F. Schetzina, T. J. Magee, C. Leung, and H. Kawayoshi, “Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy”, Appl. Phys. Lett., vol. 44, no. 3, pp. 313–315, 1984.
  • M. Carmody, A. Yulius, D. Edwall, D. Lee, E. Piquette, R. Jacobs, D. Benson, A. Stoltz, J. Markunas, A. Almeida, and J. Arias, “Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates,” J. Electron. Mater., vol. 41, no. 10, pp. 2719–2724, 2012.
  • F. A. Ponce, R. Sinclair, and R. H. Bube, “Native tellurium dioxide layer on cadmium telluride: A high‐resolution electron microscopy study,” Appl. Phys. Lett., vol. 39, no. 12, pp. 951–953, 1998.
  • R. Zia, F. Saleemi, S. Naseem, and Z. Kayani, “Study the efficiency of single crystal CdTe/ZnCdS solar cell at various temperatures and illumination levels,” Energy Reports, vol. 1, no. 1, pp. 58–61, 2015.
  • J. G. Werthen, J. P. Haring, A. L. Fahrenbruch, and R. H. Bube, “Surface effects on metal/CdTe junctions and CdTe heterojunctions,” J. Phys. D. Appl. Phys., vol. 16, no. 12, pp. 2391–2404, 1983.
  • K. D. Dobson, P. D. Paulson, B. E. McCandless, and R. W. Birkmire, “The Dynamics of Cadmium Telluride Etching”, Mater. Res. Soc. Symp. Proc., vol. 763, no. B3.1, p. 107-118, 2003.
  • P. Moravec, V. G. Ivanits’ka, J. Franc, Z. F. Tomashik, V. M. Tomashik, K. Mašek, P. I. Feychuk, L. P. Shcherbak, P. Höschl, R. Grill, and J. Walter, “Chemical Interaction of CdTe and CdZnTe with Aqueous Solutions of H2O2-HI-Tartaric Acid”, J. Electron. Mater. vo. 38, no. 8, pp. 1645–1651, 2009.
  • V. G. Ivanits’ka, P. Moravec, J. Franc, V. M. Tomashik, Z. F. Tomashik, K. Mašek, P. S. Chukhnenko, P. Höschl, and J. Ulrych, “Chemical Polishing of CdTe and CdZnTe in Iodine–Methanol Etching Solutions,” J. Electron. Mater., vol. 40, no. 8, pp. 1802–1808, 2011.
  • V. G. Ivanits’ka, P. Moravec, V. M. Tomashik, K. Mašek, Z. F. Tomashik, J. Franc, R. Grill, and P. Höschl, “A Slightly Oxidizing Etchant for Polishing of CdTe and CdZnTe Surfaces,” J. Electron. Mater., vol. 42, no. 11, pp. 3059–3065, 2013.
  • P. Moravec, Z. F. Tomashik, V. G. Ivanits’ka, V. M. Tomashik, J. Franc, K. Mašek, and P. Höschl, “Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals” J. Electron. Mater. vol. 41, no. 10, pp. 2838–2845, 2012.
  • Y. S. Wu, C. R. Becker, A. Waag, R. Schmiedl, S. Einfeldt, and G. Landwehr, “Oxygen on the (100) CdTe surface,” J. Appl. Phys., vol. 73, no. 11, pp. 7385–7388, 1993.
  • E. Bakali, Y. Selamet, and E. Tarhan, “Effect of Annealing on the Density of Defects in Epitaxial CdTe (211)/GaAs,” J. Electron. Mater., vol. 47, no. 8, pp. 4780–4792, 2018.
  • E. Bilgilisoy, S. Özden, E. Bakali, M. Karakaya, and Y. Selamet, “Characterization of CdTe Growth on GaAs Using Different Etching Techniques,” J. Electron. Mater., vol. 44, no. 9, pp. 3124–3133, 2015.
  • J. Frühauf, E. Gärtner, and S. Krönert, Shape and Functional Elements of the Bulk Silicon Microtechnique, Springer, Berlin/Heidelberg, 2005.
  • W. J. Everson, C. K. Ard, J. L. Sepich, B. E. Dean, G. T. Neugebauer, and H. F. Schaake, “Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy,” J. Electron. Mater., vol. 24, no. 5, pp. 505–51, 1995.
  • E. P. Warekois, M. C. Lavine, A. N. Mariano, and H. C. Gatos, “Crystallographic Polarity in the II‐VI Compounds,” J. Appl. Phys., vol. 33, no. 2, pp. 690–696, 1962.
  • Polat, M., Bilgilisoy, E., Arı, O., Öztürk, O., and Selamet, Y., “Identifying threading dislocations in CdTe films by reciprocal space mapping and defect decoration etching”, Journal of Applied Physics. vol. 124, no. 8, pp. 085710 1-7, 2018.
  • J. A. Garcia, A. Remón, V. Muñoz, and R. Triboulet, “Photoluminescence study of radiative transitions in ZnTe bulk crystals,” J. Cryst. Growth, vol. 191, no. 4, pp. 685–691, 1998.
  • Z. C. Feng, S. Perkowitz, J. M. Wrobel, and J. J. Dubowski, “Outgoing multiphonon resonant Raman scattering and luminescence near the E0 + Δ0 gap in epitaxial CdTe films,” Phys. Rev. B, vol. 39, no. 17, pp. 12997–13000, 1989.
  • L. He, X. Fu, Q. Wei, W. Wang, L. Chen, Y. Wu, X. Hu, J. Yang, Q. Zhang, R. Ding, X. Chen, and W. Lu, “MBE HgCdTe on Alternative Substrates for FPA Applications,” J. Electron. Mater., vol. 37, no. 9, pp. 1189–1199, 2008.
  • X. J. Wang, Y. B. Hou, Y. Chang, C. R. Becker, R. F. Klie, and S. Sivananthan, “Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy,” J. Electron. Mater., vol. 38, no. 8, pp. 1776–1780, 2009.
  • K. Nakagawa, K. Maeda, and S. Takeuchi, “Observation of dislocations in cadmium telluride by cathodoluminescence microscopy,” Appl. Phys. Lett., vol. 34, no. 9, pp. 574–575, 1979.
  • R. Bommena, T. Seldrum, L. Samain, R. Sporken, S. Sivananthan, and S. R. J. Brueck, “Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates,” J. Electron. Mater., vol. 37, no. 9, pp. 1255–1260, 2008.
  • S. S. Choi, and G. Lucovsky, “Native oxide formation on CdTe,”, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., vol.6, no. 4, pp. 1198-1203, 1988.
  • R. A. Muñoz Hernández, A. Calderón, A. Cruz-Orea, S. A. Tomas, F. Sánchez Sinencio, and G. Peña Rodriguez, “Caracterización Óptica de Centros Absorbentes en Películas Biopoliméricas Obtenidas de Pericarpio de Maíz,” Superficies y Vacio, vol. 8, no.1, pp. 59–63, 1999.
  • A. Mooradian, “Light Scattering from Single-Particle Electron Excitations in Semiconductors,”, Phys. Rev. Lett., vol. 20, no. 20, pp. 1102–1104, 1968.
  • H. G. Schulze, C. G. Atkins, D. V. Devine, M. W. Blades, and R. F. B. Turner, “Fully Automated Decomposition of Raman Spectra into Individual Pearson's Type VII Distributions Applied to Biological and Biomedical Samples,” Appl. Spectrosc., vol. 69, no. 1, pp. 26–36, 2015.
  • A. Lusson, J. Wagner, and M. Ramsteiner, “Resonant Raman scattering of In+‐implanted CdTe and Cd0.23Hg0.77Te,” Appl. Phys. Lett., vol. 54, no. 18, pp. 1787–1789, 1989.
  • A. Cantarero, C. Trallero-Giner, and M. Cardona, “Excitons in one-phonon resonant Raman scattering: Fröhlich and interference effects,” Phys. Rev. B, vol. 40, no. 18, pp. 12290–12295, 1989.
  • J. Menéndez, M. Cardona, and L. K. Vodopyanov, “Resonance Raman scattering by LO phonons in CdxHg1-xTe at the E0 + Δ0 gap,” Phys. Rev. B, vol 31, no. 6, pp. 3705–3711, 1985.
  • S. S. Islam, S. Rath, K. P. Jain, S. C. Abbi, C. Julien, and M. Balkanski, “Forbidden one-LO-phonon resonant Raman scattering and multiphonon scattering in pure CdTe crystals,” Phys. Rev. B, vol. 46, no. 8, pp. 4982–4985, 1992.
  • S. H. Shin, J. Bajaj, L. A. Moudy, and D. T. Cheung, “Characterization of Te precipitates in CdTe crystals,” Appl. Phys. Lett., vol. 43, no. 1, pp. 68–70, 1983.
Toplam 43 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Konular Metroloji,Uygulamalı ve Endüstriyel Fizik
Bölüm Araştırma Makalesi
Yazarlar

Elif Bilgilisoy Bu kişi benim 0000-0002-5295-213X

Elif Özçeri Bu kişi benim 0000-0001-6116-076X

Enver Tarhan 0000-0003-3167-3956

Yayımlanma Tarihi 1 Aralık 2020
Gönderilme Tarihi 5 Haziran 2020
Kabul Tarihi 11 Eylül 2020
Yayımlandığı Sayı Yıl 2020 Cilt: 24 Sayı: 6

Kaynak Göster

APA Bilgilisoy, E., Özçeri, E., & Tarhan, E. (2020). Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures. Sakarya University Journal of Science, 24(6), 1232-1247. https://doi.org/10.16984/saufenbilder.748315
AMA Bilgilisoy E, Özçeri E, Tarhan E. Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures. SAUJS. Aralık 2020;24(6):1232-1247. doi:10.16984/saufenbilder.748315
Chicago Bilgilisoy, Elif, Elif Özçeri, ve Enver Tarhan. “Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures”. Sakarya University Journal of Science 24, sy. 6 (Aralık 2020): 1232-47. https://doi.org/10.16984/saufenbilder.748315.
EndNote Bilgilisoy E, Özçeri E, Tarhan E (01 Aralık 2020) Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures. Sakarya University Journal of Science 24 6 1232–1247.
IEEE E. Bilgilisoy, E. Özçeri, ve E. Tarhan, “Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures”, SAUJS, c. 24, sy. 6, ss. 1232–1247, 2020, doi: 10.16984/saufenbilder.748315.
ISNAD Bilgilisoy, Elif vd. “Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures”. Sakarya University Journal of Science 24/6 (Aralık 2020), 1232-1247. https://doi.org/10.16984/saufenbilder.748315.
JAMA Bilgilisoy E, Özçeri E, Tarhan E. Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures. SAUJS. 2020;24:1232–1247.
MLA Bilgilisoy, Elif vd. “Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures”. Sakarya University Journal of Science, c. 24, sy. 6, 2020, ss. 1232-47, doi:10.16984/saufenbilder.748315.
Vancouver Bilgilisoy E, Özçeri E, Tarhan E. Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures. SAUJS. 2020;24(6):1232-47.