Electrochemical and Structural Behavior of Bi Doped ZnO Materials Obtained with Solvothermal Synthesis Method
Abstract
In this study, Bi-doped ZnO and undoped ZnO nanomaterials have been synthesized by the solvothermal reaction method. The effect of Bi doping on the structural and electrochemical properties has been investigated by X-ray diffractions (XRD), X-ray photoelectron spectroscopy (XPS) and, scanning electron microscopy (SEM). As seen from X-ray diffraction spectra performed on the bulk material, it has been clearly observed that both Bi doping changed the preferred orientation of the nanopowder as (101) and Bi+3 ions were expectedly entered the lattice. Furthermore, this result has been supported by photoelectron spectra. Scanning electron microscopy images have shown the shapes and distributions of nanostructures of the samples. As a result, it is thought that Bi doping is suitable for obtaining p-type conductivity in ZnO materials for the experimental processes we applied to samples in the study.
Keywords
Supporting Institution
Project Number
Thanks
References
- [1] D. C. Look, "Recent advances in ZnO materials and devices," Mater. Sci. Eng., B, 80, 383-387, 2001.
- [2] H. Kim, J. S. Horwitz, W. H. Kim, A. J. Makinen, Z. H. Kafafi, and D. B. Chrisey, "Doped ZnO thin films as anode materials for organic light-emitting diodes," Thin Solid Films, 420, 539-543, 2002.
- [3] C. Yuen, S. F. Yu, S. P. Lau, and G. C. K. Chen, "Design and fabrication of ZnO light-emitting devices using filtered cathodic vacuum arc technique," J. Cryst.Growth, 287, 204-212, 2006.
- [4] F. C. M. Vandepol, "Thin Film ZnO - properties and applications," Am. Ceram. Soc. Bull, 69, 1959-1965, 1990.
- [5] R.-Y. Yang, M.-H. Weng, C.-T. Pan, C.-M. Hsiung, and C.-C. Huang, "Low-temperature deposited ZnO thin films on the flexible substrate by cathodic vacuum arc technology," Appl. Surf. Sci., 257, 7119-7122, 2011.
- [6] K. Chung, C.-H. Lee, and G.-C. Yi, "Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices," Sci., 330, 655-657, 2010.
- [7] M. H. Huang, S. Mao, H. Feick, H. Q. Yan, Y. Y. Wu, H. Kind, et al., "Room-temperature ultraviolet nanowire nanolasers," Sci., 292, 1897-1899, 2001.
- [8] S. B. Zhang, S. H. Wei, and A. Zunger, "Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO," Phys. Rev. B, 63 (7), 075205, 2001.
Details
Primary Language
English
Subjects
Metrology, Applied and Industrial Physics
Journal Section
Research Article
Publication Date
May 27, 2021
Submission Date
February 24, 2021
Acceptance Date
April 13, 2021
Published in Issue
Year 2021 Volume: 16 Number: 1