The Temperature-Dependent Current-Voltage Characteristics of n-AgInSe2/p-Si Heterojunction Diode

Yıl 2018, Cilt: 13 Sayı: 2, 18 - 24, 30.11.2018

Durmuş Aldemir Murat Kaleli

https://doi.org/10.29233/sdufeffd.425952

Öz

n-AgInSe₂/p-Si
heterojunction diode was fabricated by a successive layer deposition of AgInSe₂
thin film on p-type Si. The ideality
factor and saturation current of the diode exhibited temperature dependent
behaviour. The activation energy was calculated by using traditional activation
energy plot. The current mechanism for diode was determined as defect-assisted
tunnelling and carrier recombination. Furthermore, a modified Horvath method
which was firstly presented for n-AgInSe₂/p-Si heterojunction here was used for
calculation of activation energy.

Anahtar Kelimeler

AgInSe2 thin film, Temperature dependence, Modified Horvath method

n-AgInSe2/p-Si Heteroeklem Diyodunun Sıcaklığa Bağlı Akım-Gerilim Karakteristikleri

Öz

n-AgInSe₂/p-Si heteroeklem diyodu, AgInSe₂
ince filminin, p-tipi Si üzerine ardıl tabaka biriktirme yöntemi ile imal
edilmiştir. Diyodun idealite çarpanı ve doyma akımı sıcaklık bağlı davranış
göstermiştir. Aktivasyon enerjisi, geleneksel aktivasyon enerji grafiği
kullanılarak hesaplanmıştır. Akım mekanizmaları kusur-destekli tünelleme ve
taşıyıcı rekombinasyonu olarak belirlenmiştir. Ayrıca aktivasyon enerjisini
hesaplamak için değiştirilmiş Horvath yöntemi, n-AgInSe₂/p-Si
heteroeklemi için ilk defa burada sunulmuştur.

Anahtar Kelimeler

AgInSe2 ince film, Sıcaklık bağlılığı, Değiştirilmiş Horvath yöntemi

Kaynakça

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