Electrical Characterization of ZnO (Al) / p-Si Heterojunctions Fabricated by SolGel Method

Yıl 2018, Cilt: 13 Sayı: 2, 121 - 131, 30.11.2018

Namık Akçay

https://doi.org/10.29233/sdufeffd.462245

Öz

In this work, the electrical properties of heterojunctions formed by coating of undoped
Zinc Oxide (ZnO) and 2% Aluminum doped zinc oxid (AZO) on p-type silicon (p-Si) were
investigated. ZnO and AZO nanoparticles were synthesized by Sol-Gel method and ZnO / p-Si,
ZnO (Al) / p-Si heterojunctions were formed by spin coating technique. After the coating, the
samples were thermally annealed at 450 oC for 30 minutes. Current-Voltage (I-V) and
Capacitance-Voltage (C-V) measurements taken at 10K-300K show that the samples exhibit
diode behavior with very low leakage current. Built-in potential (Vbi) and carrier concentrations
(Nd) of diodes were calculated from C-V measurement results. Deep level transition spectroscopy
(DLTS) technique was used to investigate trap levels around the depletion region. The presence
of electron traps in both samples was determined.

Anahtar Kelimeler

ZnO thin film, Al doping, ZnO/p-Si heterojunction, DLTS

Sol-Jel Yöntemi ile Üretilen ZnO(Al)/p-Si Heteroekleminin Elektriksel Karakterizasyonu

Öz

Bu çalışmada, p-tipi Silisyum
(p-Si) üzerine katkısız Çinko Oksit (ZnO) ve %2 Alüminyum katkılı çinko oksit
(ZnOAl) kaplanarak oluşturulan heteroeklemlerin elektriksel özellikleri
incelenmiştir. ZnO ve ZnOAl nanoparçacıklar Sol-Jel yöntemi ile sentezlenmiş ve
ZnO/p-Si, ZnOAl/p-Si heteroeklemleri döndürme kaplama tekniği ile
oluşturulmuştur. Kaplama sonrası örneklere 450 ^oC’de 30 dk termal
tavlama işlemi uygulanmıştır. 10K-300K aralığında alınan Akım-Voltaj (I-V) ve
Kapasite-Voltaj (C-V) ölçümleri örneklerin çok düşük sızıntı akımına sahip
diyot davranışı sergilediğini göstermektedir. C-V ölçüm sonuçlarından diyotların bariyer yüksekliği (V_bi) ve taşıyıcı
konsantrasyonları (N_d)
hesaplandı. Derin seviye
geçiş spektroskopisi (DLTS) tekniği ile arınma bölgesi civarında bulunan tuzak
seviyeleri araştırılmıştır. Her iki örnekte de elektron tuzaklarının varlığı
tespit edilmiştir.

Anahtar Kelimeler

ZnO ince film, Al katkılama, ZnO/p-Si heteroeklemi, DLTS

Kaynakça

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