MBE (Molecular Beam Epitaxy) grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence (EL) measurements. Bipolar injection set on just of forward bias,VF, ≅1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm. This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.
Primary Language | English |
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Journal Section | Research Articles |
Authors | |
Publication Date | June 1, 2016 |
Submission Date | March 14, 2016 |
Published in Issue | Year 2016 Volume: 34 Issue: 2 |
IMPORTANT NOTE: JOURNAL SUBMISSION LINK https://eds.yildiz.edu.tr/sigma/