Tuz Stresi Koşullarında Havuçta (Daucus carota L.) Eksojen Silikon Dioksit Uygulamaları

Yıl 2021, Cilt: 8 Sayı: 4, 1094 - 1102, 24.10.2021

Ayşe Gül Nasırcılar Kamile Ulukapı Hatice Üstüner

https://doi.org/10.30910/turkjans.957578

Öz

Bu çalışmada, tuz stresi koşullarında (150, 200 mM NaCl) havuç tohumlarının çimlenme parametreleri üzerine dışarıdan silikon dioksit uygulamalarının (0.5, 1, 1.5 mM SiO2) etkileri araştırılmıştır. Bu amaçla çimlenme yüzdesi (ÇY), ortalama çimlenme süresi (OÇS), çimlenme oranı katsayısı (ÇOK), çimlenme hız indeksi (ÇHI), çimlenme indeksi (ÇI), fide güç indeksi (FGI), yaprak sayısı, sürgün ve kök uzunluğu (mm) ve bitki taze ağırlığı (g) belirlenmiştir. Tuz stresine duyarlı sarı havucun çimlenme parametreleri 150 mM NaCl uygulamasından olumsuz etkilenmiş, sürgün ve kök uzunlukları %80 oranında azalmıştır. Özellikle SiO2 uygulamaları bu çeşit için çimlenme parametrelerini olumlu etkilemiştir. 150 mM NaCl uygulamasında 0,5 mM SiO2 ile muamele edilen tohumların çimlenmesi yaklaşık iki kat (%23) artmış ve kontrol grubunda çimlenmenin gerçekleşmediği 200 mM NaCl'de %15 çimlenme elde edilmiştir. Siyah havuç çeşidi tuz stresini tolere etmesine rağmen, silikon dioksit uygulamalarının çimlenme ve gelişme üzerinde teşvik edici bir etkisi olmuştur. Siyah havuç tohumlarında özellikle 1.5 mM SiO2 uygulamasının çimlenme parametrelerine olumlu etki yaptığı belirlenmiştir. 150 mM NaCl'de 1.5 mM SiO2 ile muamele edilen tohumlarda çimlenme yüzdesi %93'e, 200 mM NaCl konsantrasyonunda ise %86'ya çıkarak kontrol grubuna göre daha yüksek değerlere ulaşmıştır. Sonuçlar, uygun SiO2 konsantrasyonları ile ön işlemin çimlenme performansını önemli ölçüde iyileştirdiğini ve tuz stresine toleransı desteklediğini göstermiştir.

Anahtar Kelimeler

Çimlenme, Havuç, Silikon dioksit, Tuz Stresi.

Exogenous Silicon Dioxide Treatment in Carrot (Daucus carota L.) Under Salt Stress Conditions

Öz

In this study, the effects of exogenous silicon dioxide applications (0.5, 1, 1.5 mM SiO2) on the germination parameters of carrot seeds were investigated under salt stress conditions (150, 200 mM NaCl). For this purpose, germination percentage (GP), mean germination time (MGT), germination rate coefficient (CVG), germination rate index (GRI), germination index (GI), seedling viability index (SVI), leaf number, shoot and root lengths (mm) and plant fresh weight (g) were determined.
Germination parameters of yellow carrot, sensitive to salt stress, were adversely affected by 150 mM NaCl application and shoot and root lengths were reduced by 80%. Especially SiO2 applications had a positive effect on germination parameters for the cultivar. In 150 mM NaCl application, the germination of the seeds treated with 0.5 mM SiO2 increased approximately two times (23%), and 15% germination was obtained in 200 mM NaCl, which did not germinate in the control. Although the black carrot cultivar tolerated salt stress, silicon dioxide treatments had a stimulating effect on germination and development. It was determined that especially 1.5 mM SiO2 application in black carrot seeds had a positive effect on germination parameters. Germination percentage increased to 93% in seeds treated with 1.5 mM SiO2 in 150 mM NaCl, and 86% at 200 mM NaCl concentration, reaching higher values compared to the control group. The results showed that pre-treatment with appropriate silicon concentrations significantly improved germination performance and promoted tolerance to the salt stress.

Anahtar Kelimeler

Carrot, Germination, Salt Stress, Silicon dioxide

Kaynakça

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