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Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films

Year 2017, Volume: 30 Issue: 3, 281 - 287, 20.09.2017

Abstract

In this study, SiO2 films with
thicknesses 50 nm were grown on n-GaAs
substrate by plasma enhanced chemical vapor deposition technique. To
investigate the electrical transport mechanisms, Au/SiO2/n-GaAs (MOS) type capacitor structures
were fabricated and measured current density-voltage (J-V) characteristics at room temperature. As a function of the
applied gate voltage, Schottky emission, Frenkel-Poole emission, and trap-assisted
tunneling were found as dominant current transport mechanisms under depletion
mode. The obtained trap levels were attributed to defects related with the Ga
vacancies formed at the SiO2/GaAs interface.

References

  • [1] Sze, S. M., Physics of Semiconductor Devices, 2nd ed., Wiley, New York, (1981).
  • [2] Nadimi, E., Planitz, P., Ottking, R., Schreiber, M., Radehaus, C.,” Single and Multiple Oxygen Vacancies in Ultrathin SiO2 Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation”, IEEE Electron Dev. Letters, 31: 881-883, (2010).
  • [3] Kochowski, S., Nitsch, K., “Description Of The Frequency Behaviour Of Metal–SiO2–GaAs Structure Characteristics By Electrical Equivalent Circuit With Constant Phase Element”, Thin Solid Films, 415: 133-137, (2002).
  • [4] Mochizuki, Y., Mizuta, M., ”Initial Oxidation Of Si (100)-(2 × 1)H Monohydride Surfaces Studied By Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy”, Appl. Surf. Sci., 117: 114-118 (1997).
  • [5] Eftekhari, G., “The Electrical Properties Of Sulfur-Passivated And Rapidly Thermally Annealed GaAs Metal-Oxide-Semiconductor Structures With The Oxide Layer Grown Anodically”, Thin Solid Films, 248: 199-203, (1994).
  • [6] Lefebvre, P. R., Lai, L., Irene, E. A., “Comparison Of The Structure And Electrical Properties Of Thermal And Plasma Grown Oxides On GaAs”, J. Vac. Sci. Technol. B, 16: 996-1001 (1998).
  • [7] Gaman, V. I., Kalygina, V. M., Panin, A. V., “Effect Of Chalcogenide Elements On The Electrical Characteristics Of GaAs MIS Structures”, Solid State Electron., 43: 583-588, (1999).
  • [8] Balakrishnan, V. R., Kumar, V., Ghosh, S., “Conductance Deep-Level Transient Spectroscopic Study Of Anomalous Hole Trap In GaAs Mesfets”, Semicond. Sci. Technol., 13: 1094-1099, (1998).
  • [9] Altuntas, H., Ozcelik, S., “The Analysis of Leakage Current in MIS Au/SiO2/n-GaAs at Room Temperature”, Semiconductors, 47: 1308-1311, (2013).
  • [10] Chiu, F. C., “A Review On Conduction Mechanisms In Dielectric Films”, Adv. Mat. Sci. Eng., 578168-18, (2014).
Year 2017, Volume: 30 Issue: 3, 281 - 287, 20.09.2017

Abstract

References

  • [1] Sze, S. M., Physics of Semiconductor Devices, 2nd ed., Wiley, New York, (1981).
  • [2] Nadimi, E., Planitz, P., Ottking, R., Schreiber, M., Radehaus, C.,” Single and Multiple Oxygen Vacancies in Ultrathin SiO2 Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation”, IEEE Electron Dev. Letters, 31: 881-883, (2010).
  • [3] Kochowski, S., Nitsch, K., “Description Of The Frequency Behaviour Of Metal–SiO2–GaAs Structure Characteristics By Electrical Equivalent Circuit With Constant Phase Element”, Thin Solid Films, 415: 133-137, (2002).
  • [4] Mochizuki, Y., Mizuta, M., ”Initial Oxidation Of Si (100)-(2 × 1)H Monohydride Surfaces Studied By Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy”, Appl. Surf. Sci., 117: 114-118 (1997).
  • [5] Eftekhari, G., “The Electrical Properties Of Sulfur-Passivated And Rapidly Thermally Annealed GaAs Metal-Oxide-Semiconductor Structures With The Oxide Layer Grown Anodically”, Thin Solid Films, 248: 199-203, (1994).
  • [6] Lefebvre, P. R., Lai, L., Irene, E. A., “Comparison Of The Structure And Electrical Properties Of Thermal And Plasma Grown Oxides On GaAs”, J. Vac. Sci. Technol. B, 16: 996-1001 (1998).
  • [7] Gaman, V. I., Kalygina, V. M., Panin, A. V., “Effect Of Chalcogenide Elements On The Electrical Characteristics Of GaAs MIS Structures”, Solid State Electron., 43: 583-588, (1999).
  • [8] Balakrishnan, V. R., Kumar, V., Ghosh, S., “Conductance Deep-Level Transient Spectroscopic Study Of Anomalous Hole Trap In GaAs Mesfets”, Semicond. Sci. Technol., 13: 1094-1099, (1998).
  • [9] Altuntas, H., Ozcelik, S., “The Analysis of Leakage Current in MIS Au/SiO2/n-GaAs at Room Temperature”, Semiconductors, 47: 1308-1311, (2013).
  • [10] Chiu, F. C., “A Review On Conduction Mechanisms In Dielectric Films”, Adv. Mat. Sci. Eng., 578168-18, (2014).
There are 10 citations in total.

Details

Journal Section Physics
Authors

Halit Altuntaş

Publication Date September 20, 2017
Published in Issue Year 2017 Volume: 30 Issue: 3

Cite

APA Altuntaş, H. (2017). Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films. Gazi University Journal of Science, 30(3), 281-287.
AMA Altuntaş H. Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films. Gazi University Journal of Science. September 2017;30(3):281-287.
Chicago Altuntaş, Halit. “Electrical Conduction Mechanisms in Plasma-Enhanced Chemical Vapor Deposited SiO2 Dielectric Films”. Gazi University Journal of Science 30, no. 3 (September 2017): 281-87.
EndNote Altuntaş H (September 1, 2017) Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films. Gazi University Journal of Science 30 3 281–287.
IEEE H. Altuntaş, “Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films”, Gazi University Journal of Science, vol. 30, no. 3, pp. 281–287, 2017.
ISNAD Altuntaş, Halit. “Electrical Conduction Mechanisms in Plasma-Enhanced Chemical Vapor Deposited SiO2 Dielectric Films”. Gazi University Journal of Science 30/3 (September 2017), 281-287.
JAMA Altuntaş H. Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films. Gazi University Journal of Science. 2017;30:281–287.
MLA Altuntaş, Halit. “Electrical Conduction Mechanisms in Plasma-Enhanced Chemical Vapor Deposited SiO2 Dielectric Films”. Gazi University Journal of Science, vol. 30, no. 3, 2017, pp. 281-7.
Vancouver Altuntaş H. Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films. Gazi University Journal of Science. 2017;30(3):281-7.