In this study, SiO2 films with
thicknesses 50 nm were grown on n-GaAs
substrate by plasma enhanced chemical vapor deposition technique. To
investigate the electrical transport mechanisms, Au/SiO2/n-GaAs (MOS) type capacitor structures
were fabricated and measured current density-voltage (J-V) characteristics at room temperature. As a function of the
applied gate voltage, Schottky emission, Frenkel-Poole emission, and trap-assisted
tunneling were found as dominant current transport mechanisms under depletion
mode. The obtained trap levels were attributed to defects related with the Ga
vacancies formed at the SiO2/GaAs interface.
Journal Section | Physics |
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Authors | |
Publication Date | September 20, 2017 |
Published in Issue | Year 2017 Volume: 30 Issue: 3 |