Research Article
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Year 2023, Volume: 36 Issue: 1, 208 - 218, 01.03.2023
https://doi.org/10.35378/gujs.998008

Abstract

References

  • [1] Dai, L.L., Choi, J., Chan, V.W., “Communication satellites–technologies and systems”, Encyclopedia of Life Support Systems (EOLSS). United Nations Educational, Scientific and Cultural Organization, 1-43, (2007).
  • [2] Knopp, A., Schwarz, R.T., Lankl, B., “MIMO system implementation with displaced ground antennas for broadband military SATCOM”, MILCOM 2011 Military Communications Conference, Baltimore, 2069-2075, (2011).
  • [3] Florian, C., Resca, D., Biondi, A., Scappaviva, F., “An X‐to‐Ka band MMIC up‐converter in GaAs pHEMT technology for Ka‐band broadband satellite communications”, Microwave and Optical Technology Letters, 56(11): 2649-2656, (2014).
  • [4] Kwon, K., Kim, S., Son, K.Y., “A hybrid transformer-based CMOS duplexer with a single-ended notch-filtered LNA for highly integrated tunable RF front-ends”, IEEE Microwave and Wireless Components Letters, 28(11): 1032-1034, (2018).
  • [5] Montazeri, S., Wong, W.T., Coskun, A.H., Bardin, J.C., “Ultra-low-power cryogenic SiGe low-noise amplifiers: Theory and demonstration”, IEEE Transactions on Microwave Theory and Techniques, 64(1): 178-187, (2015).
  • [6] Arican, G.O., Akcam, N., Yazgan, E., “Ku-band GaAs mHEMT MMIC and RF front-end module for space applications”, Microwave Optical Technology Letter, 63(2): 417-425, (2021).
  • [7] Jarndal, A.H., Bassal, A.M., “A broadband hybrid GaN cascode low noise amplifier for WiMax applications”, International Journal of RF and Microwave Computer-Aided Engineering, 29: e21456, (2019).
  • [8] Oxley, C.H., “Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs”, Solid State Electronics, 45(1): 677-682, (2001).
  • [9] Venkatesh Murthy, B.T., Srinivasa Rao, I., “High-gain sub-decibel noise figure low noise amplifier for atmospheric radar”, Microwave Optical Technology Letter, 58(7): 1618-1622, (2016).
  • [10] Arican, G.O., Akcam, N., Yazgan, E., “Ku-band MMIC LNA design for space applications”, International Conference on Electrical and Electronics Engineering (ICEEE), Istanbul, Turkey, 274-278, (2019).
  • [11] Chen, Y.C., Wang, Y., Chiong, C.C., Wang, H., “An ultra-broadband low noise amplifier in GaAs 0.1-μm pHEMT process for radio astronomy application”, In 2017 IEEE International Symposium on Radio-Frequency Integration Technology, Seoul, Korea, 80-82, (2017).
  • [12] Wang, Y., Chiong, C.C., Nai, J.K., Wang, H., “A high gain broadband LNA in GaAs 0.15-μm pHEMT process using inductive feedback gain compensation for radio astronomy applications”, Proceedings of the IEEE International Symposium on Radio-Frequency Integration Technology, Sendai, Japan, 79-81, (2015).
  • [13] Kobayashi, K.W., Campbell, C., Lee, C., Gallagher, J., Shust, J., Botelho, A., “A reconfigurable s-/x-band GaN cascode LNA MMIC”, Proceedings of the IEEE Compound Semiconductor Integrated Circuit Symposium, Miami, USA, (2017).
  • [14] Kim, B., Gao, W., “X-band robust current-shared GaN low noise amplifier for receiver applications”, Proceedings of the 2016 Compound Semiconductor Integrated Circuit Symposium, Austin, USA, (2016).
  • [15] Vittori, M., Colangeli, S., Ciccognani, W., Salvucci, A., Polli, G., Limiti, E., “High performance X-band LNAs using a 0.25 μm GaN technology”, Proceedings of the 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Giardini Naxos, Italy, 157-160, (2017).
  • [16] D'Angelo, S., Biondi, A., Scappaviva, F., Resca, D., Monaco, V.A., “A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends”, Proceedings of the 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), Krakow, Poland, (2016).
  • [17] Yousef, K., Jia, H., Pokharel, R., Allam, A., Ragab, M., Yoshida, K., “A 2–16 GHz CMOS current reuse cascaded ultra-wideband low noise amplifier”, Proceedings of the 2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC), Riyadh, Saudi Arabia, (2011).
  • [18] Zhang, H., Qian, G., Zhong, W., Liu, C., “A 3–15 GHz ultra-wideband 0.15-μm pHEMT low noise amplifier design”, Proceedings of International Conference on Communication Systems (ICCS), Shenzhen, China, (2016).
  • [19] Wu, C.S., Chang, C.H., Lin, T.Y., Wu, H.M., “A ultrawideband 3–10 GHz low-noise amplifier MMIC using inductive-series peaking technique”, Proceedings of the 2011 International Conference on Electric Information and Control Engineering, Wuhan, China, 5667-5670, (2011).
  • [20] Memioglu, O., Gundel, A., “A High Linearity Broadband Gain Block/LNA MMIC with Diode Predistortion in GaAs pHEMT Technology”, Proceedings of the 18th Mediterranean Microwave Symposium (MMS), Istanbul, Turkey, 120-123, (2018).
  • [21] El Bakkali, M., Touhami, N.A., Elhamadi, T.E., Elftouh, H., Lamsalli, M., “High gain 0.18 μm-GaAs MMIC cascode-distributed low-noise amplifier for UWB application”, Microelectronics Journal, 108: 104970, (2021).

Design of a Low Cost X-Band LNA with Sub-1-dB NF for SATCOM Applications

Year 2023, Volume: 36 Issue: 1, 208 - 218, 01.03.2023
https://doi.org/10.35378/gujs.998008

Abstract

In this article, we demonstrate a low-cost 7.25-7.75 GHz two-stage low noise amplifier with sub-1-dB noise figure for satellite communication applications. The microstrip technology on Rogers RT5880 substrate with the dielectric constant of 2.2 and thickness of 0.508 mm were utilized to develop a low noise amplifier. The printed-circuit-board technology offers a variety of profits such as being low-cost, lighter-weight and re-configurability after the manufacturing process make this technology charming for satellite communication systems for both commercial and military applications. Since the monolithic microwave integrate circuit technology provide much smaller sized circuits and high electrical performance especially at the millimeter-wave frequencies, the printed microstrip technology can be a significant rival to integrated-circuit technology with its proven reliability, easier, cheaper and faster manufacturing process, compactible electrical performance in X-band applications. Moreover, the proposed amplifier was developed with utilizing California Eastern Laboratories’ CE3512K2 transistor on Rogers-RT5880 and surface mount devices were utilized in the matching networks to reduce the size. In addition, the source-generation and interstage matching topologies were implemented to simplify the matching complexity to enhance the noise and gain. The prototype was manufactured with utilizing LPKF prototyping machine. The developed LNA exhibits a measured gain of 23.5±0.5 dB with the noise figure of less than 0.9 dB and input/output return loss better than 11.5 dB in the operating frequency bandwidth. Furthermore, the developed amplifier has a measured carrier to interference of -59 dBc and P1dB of 13 dBm at the center frequency while consuming a total DC power of 50 mW.

References

  • [1] Dai, L.L., Choi, J., Chan, V.W., “Communication satellites–technologies and systems”, Encyclopedia of Life Support Systems (EOLSS). United Nations Educational, Scientific and Cultural Organization, 1-43, (2007).
  • [2] Knopp, A., Schwarz, R.T., Lankl, B., “MIMO system implementation with displaced ground antennas for broadband military SATCOM”, MILCOM 2011 Military Communications Conference, Baltimore, 2069-2075, (2011).
  • [3] Florian, C., Resca, D., Biondi, A., Scappaviva, F., “An X‐to‐Ka band MMIC up‐converter in GaAs pHEMT technology for Ka‐band broadband satellite communications”, Microwave and Optical Technology Letters, 56(11): 2649-2656, (2014).
  • [4] Kwon, K., Kim, S., Son, K.Y., “A hybrid transformer-based CMOS duplexer with a single-ended notch-filtered LNA for highly integrated tunable RF front-ends”, IEEE Microwave and Wireless Components Letters, 28(11): 1032-1034, (2018).
  • [5] Montazeri, S., Wong, W.T., Coskun, A.H., Bardin, J.C., “Ultra-low-power cryogenic SiGe low-noise amplifiers: Theory and demonstration”, IEEE Transactions on Microwave Theory and Techniques, 64(1): 178-187, (2015).
  • [6] Arican, G.O., Akcam, N., Yazgan, E., “Ku-band GaAs mHEMT MMIC and RF front-end module for space applications”, Microwave Optical Technology Letter, 63(2): 417-425, (2021).
  • [7] Jarndal, A.H., Bassal, A.M., “A broadband hybrid GaN cascode low noise amplifier for WiMax applications”, International Journal of RF and Microwave Computer-Aided Engineering, 29: e21456, (2019).
  • [8] Oxley, C.H., “Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs”, Solid State Electronics, 45(1): 677-682, (2001).
  • [9] Venkatesh Murthy, B.T., Srinivasa Rao, I., “High-gain sub-decibel noise figure low noise amplifier for atmospheric radar”, Microwave Optical Technology Letter, 58(7): 1618-1622, (2016).
  • [10] Arican, G.O., Akcam, N., Yazgan, E., “Ku-band MMIC LNA design for space applications”, International Conference on Electrical and Electronics Engineering (ICEEE), Istanbul, Turkey, 274-278, (2019).
  • [11] Chen, Y.C., Wang, Y., Chiong, C.C., Wang, H., “An ultra-broadband low noise amplifier in GaAs 0.1-μm pHEMT process for radio astronomy application”, In 2017 IEEE International Symposium on Radio-Frequency Integration Technology, Seoul, Korea, 80-82, (2017).
  • [12] Wang, Y., Chiong, C.C., Nai, J.K., Wang, H., “A high gain broadband LNA in GaAs 0.15-μm pHEMT process using inductive feedback gain compensation for radio astronomy applications”, Proceedings of the IEEE International Symposium on Radio-Frequency Integration Technology, Sendai, Japan, 79-81, (2015).
  • [13] Kobayashi, K.W., Campbell, C., Lee, C., Gallagher, J., Shust, J., Botelho, A., “A reconfigurable s-/x-band GaN cascode LNA MMIC”, Proceedings of the IEEE Compound Semiconductor Integrated Circuit Symposium, Miami, USA, (2017).
  • [14] Kim, B., Gao, W., “X-band robust current-shared GaN low noise amplifier for receiver applications”, Proceedings of the 2016 Compound Semiconductor Integrated Circuit Symposium, Austin, USA, (2016).
  • [15] Vittori, M., Colangeli, S., Ciccognani, W., Salvucci, A., Polli, G., Limiti, E., “High performance X-band LNAs using a 0.25 μm GaN technology”, Proceedings of the 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Giardini Naxos, Italy, 157-160, (2017).
  • [16] D'Angelo, S., Biondi, A., Scappaviva, F., Resca, D., Monaco, V.A., “A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends”, Proceedings of the 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), Krakow, Poland, (2016).
  • [17] Yousef, K., Jia, H., Pokharel, R., Allam, A., Ragab, M., Yoshida, K., “A 2–16 GHz CMOS current reuse cascaded ultra-wideband low noise amplifier”, Proceedings of the 2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC), Riyadh, Saudi Arabia, (2011).
  • [18] Zhang, H., Qian, G., Zhong, W., Liu, C., “A 3–15 GHz ultra-wideband 0.15-μm pHEMT low noise amplifier design”, Proceedings of International Conference on Communication Systems (ICCS), Shenzhen, China, (2016).
  • [19] Wu, C.S., Chang, C.H., Lin, T.Y., Wu, H.M., “A ultrawideband 3–10 GHz low-noise amplifier MMIC using inductive-series peaking technique”, Proceedings of the 2011 International Conference on Electric Information and Control Engineering, Wuhan, China, 5667-5670, (2011).
  • [20] Memioglu, O., Gundel, A., “A High Linearity Broadband Gain Block/LNA MMIC with Diode Predistortion in GaAs pHEMT Technology”, Proceedings of the 18th Mediterranean Microwave Symposium (MMS), Istanbul, Turkey, 120-123, (2018).
  • [21] El Bakkali, M., Touhami, N.A., Elhamadi, T.E., Elftouh, H., Lamsalli, M., “High gain 0.18 μm-GaAs MMIC cascode-distributed low-noise amplifier for UWB application”, Microelectronics Journal, 108: 104970, (2021).
There are 21 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Electrical & Electronics Engineering
Authors

Galip Orkun Arıcan 0000-0002-9375-886X

Nursel Akçam 0000-0003-0585-3988

Publication Date March 1, 2023
Published in Issue Year 2023 Volume: 36 Issue: 1

Cite

APA Arıcan, G. O., & Akçam, N. (2023). Design of a Low Cost X-Band LNA with Sub-1-dB NF for SATCOM Applications. Gazi University Journal of Science, 36(1), 208-218. https://doi.org/10.35378/gujs.998008
AMA Arıcan GO, Akçam N. Design of a Low Cost X-Band LNA with Sub-1-dB NF for SATCOM Applications. Gazi University Journal of Science. March 2023;36(1):208-218. doi:10.35378/gujs.998008
Chicago Arıcan, Galip Orkun, and Nursel Akçam. “Design of a Low Cost X-Band LNA With Sub-1-DB NF for SATCOM Applications”. Gazi University Journal of Science 36, no. 1 (March 2023): 208-18. https://doi.org/10.35378/gujs.998008.
EndNote Arıcan GO, Akçam N (March 1, 2023) Design of a Low Cost X-Band LNA with Sub-1-dB NF for SATCOM Applications. Gazi University Journal of Science 36 1 208–218.
IEEE G. O. Arıcan and N. Akçam, “Design of a Low Cost X-Band LNA with Sub-1-dB NF for SATCOM Applications”, Gazi University Journal of Science, vol. 36, no. 1, pp. 208–218, 2023, doi: 10.35378/gujs.998008.
ISNAD Arıcan, Galip Orkun - Akçam, Nursel. “Design of a Low Cost X-Band LNA With Sub-1-DB NF for SATCOM Applications”. Gazi University Journal of Science 36/1 (March 2023), 208-218. https://doi.org/10.35378/gujs.998008.
JAMA Arıcan GO, Akçam N. Design of a Low Cost X-Band LNA with Sub-1-dB NF for SATCOM Applications. Gazi University Journal of Science. 2023;36:208–218.
MLA Arıcan, Galip Orkun and Nursel Akçam. “Design of a Low Cost X-Band LNA With Sub-1-DB NF for SATCOM Applications”. Gazi University Journal of Science, vol. 36, no. 1, 2023, pp. 208-1, doi:10.35378/gujs.998008.
Vancouver Arıcan GO, Akçam N. Design of a Low Cost X-Band LNA with Sub-1-dB NF for SATCOM Applications. Gazi University Journal of Science. 2023;36(1):208-1.