Year 2019, Volume 15, Issue 2, Pages 139 - 143 2019-06-30

Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies

Berk Morkoc [1] , Ayşegül Kahraman [2] , Aliekber Aktag [3] , Ercan Yılmaz [4]

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Electrical parameters of Erbium Oxide (Er2O3) MOS capacitors depending on frequency were investigated deeply, in this paper. Er2O3 layers were deposited on p–Si substrates with (100) oriented using RF–magnetron sputtering method. The films were annealed at 500 oC in N2 environment. C–V characteristic changes reduce with increasing frequency. G/ω–V characteristic variations show different behavior between 10–250 kHz and 250 kHz–1 MHz. It is thought that these different behaviors are caused by interface states between silicon and Er2O3 layer, series resistance (Rs) effects and the relaxation time of trapped states. The Rs values calculated by the Cma and Gma values at the high frequency and decrease with rising frequency. Then, Cc­­–V and Gc/ω–V characteristic curves were measured and compared to first measurements. In addition, interface state density (Dit), diffusion potential (VD), and barrier height (B) were calculated and these results demonstrate similar behaviors.
Er2O3, MOS, Capacitor, Interface states, Series resistance
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Primary Language en
Subjects Engineering
Published Date 30-06-2019
Journal Section Articles
Authors

Author: Berk Morkoc
Institution: FİZİK BÖLÜMÜ
Country: Turkey


Author: Ayşegül Kahraman (Primary Author)
Institution: FİZİK BÖLÜMÜ

Author: Aliekber Aktag
Institution: NÜKLEER RADYASYON DEDEKTÖRLERİ UYGULAMA VE ARAŞTIRMA MERKEZİ

Author: Ercan Yılmaz
Institution: NÜKLEER RADYASYON DEDEKTÖRLERİ UYGULAMA VE ARAŞTIRMA MERKEZİ

Dates

Publication Date: June 30, 2019

Bibtex @research article { cbayarfbe460022, journal = {Celal Bayar University Journal of Science}, issn = {1305-130X}, eissn = {1305-1385}, address = {Celal Bayar University}, year = {2019}, volume = {15}, pages = {139 - 143}, doi = {10.18466/cbayarfbe.460022}, title = {Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies}, key = {cite}, author = {Morkoc, Berk and Kahraman, Ayşegül and Aktag, Aliekber and Yılmaz, Ercan} }
APA Morkoc, B , Kahraman, A , Aktag, A , Yılmaz, E . (2019). Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. Celal Bayar University Journal of Science, 15 (2), 139-143. DOI: 10.18466/cbayarfbe.460022
MLA Morkoc, B , Kahraman, A , Aktag, A , Yılmaz, E . "Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies". Celal Bayar University Journal of Science 15 (2019): 139-143 <http://dergipark.org.tr/cbayarfbe/issue/46535/460022>
Chicago Morkoc, B , Kahraman, A , Aktag, A , Yılmaz, E . "Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies". Celal Bayar University Journal of Science 15 (2019): 139-143
RIS TY - JOUR T1 - Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies AU - Berk Morkoc , Ayşegül Kahraman , Aliekber Aktag , Ercan Yılmaz Y1 - 2019 PY - 2019 N1 - doi: 10.18466/cbayarfbe.460022 DO - 10.18466/cbayarfbe.460022 T2 - Celal Bayar University Journal of Science JF - Journal JO - JOR SP - 139 EP - 143 VL - 15 IS - 2 SN - 1305-130X-1305-1385 M3 - doi: 10.18466/cbayarfbe.460022 UR - https://doi.org/10.18466/cbayarfbe.460022 Y2 - 2019 ER -
EndNote %0 Celal Bayar University Journal of Science Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies %A Berk Morkoc , Ayşegül Kahraman , Aliekber Aktag , Ercan Yılmaz %T Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies %D 2019 %J Celal Bayar University Journal of Science %P 1305-130X-1305-1385 %V 15 %N 2 %R doi: 10.18466/cbayarfbe.460022 %U 10.18466/cbayarfbe.460022
ISNAD Morkoc, Berk , Kahraman, Ayşegül , Aktag, Aliekber , Yılmaz, Ercan . "Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies". Celal Bayar University Journal of Science 15 / 2 (June 2019): 139-143. https://doi.org/10.18466/cbayarfbe.460022
AMA Morkoc B , Kahraman A , Aktag A , Yılmaz E . Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. Celal Bayar Univ J Sci. 2019; 15(2): 139-143.
Vancouver Morkoc B , Kahraman A , Aktag A , Yılmaz E . Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. Celal Bayar University Journal of Science. 2019; 15(2): 143-139.