Alternatif InGaN İnce Film Üretim Yöntemi: Termiyonik Vakum Ark

Year 2019, , 54 - 59, 28.05.2019

Soner Özen

https://doi.org/10.35414/akufemubid.394717

Cited By: 1

Abstract

Bu çalışmada, amorf cam
alttaşlar üzerine InGaN ince filmler hızlı ve düşük maliyetli olan termiyonik
vakum ark yöntemi ile doğrudan üretilmiştir. İnce filmler tek bir deneyde
alttaş ısıtma uygulamadan 2 farklı anot-alttaş arası mesafede biriktirilmiştir.
Üretilen InGaN ince filmlerin yapısal ve yüzeysel özellikleri uygun analiz
yöntemleri ile belirlenmiştir. X-ışını kırınım (XRD) cihazı ile XRD desenleri
belirlenerek kristal boyutları Scherrer yöntemi tarafından hesaplanmıştır.
Hekzagonal wurtzite kristal yapılı %50 In katkılı GaN filmlerin üretildiği
belirlenmiştir. InGaN ince filmlerin yüzeysel özellikleri ise atomik kuvvet
mikroskobu aracılığıyla tespit edilmiştir. Yüzey özellikleri belirlenirken
histogram analizleri ve boyut analizleri yapılmıştır. GaN temelli cihazların
üretiminde termiyonik vakum ark yönteminin alternatif üretim sistemi olduğu
görülmüştür.

Keywords

InGaN, Termiyonik vakum ark, Yapısal özellikler, Yüzey özellikleri

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