Research Article
(MYY) Schottky Diyotlarda Akım-Voltaj Karakteristikleri Üzerine Seri Direnç ve Arayüzey Durumlarının Etkisi
Abstract
Metal-Yalıtkan-Yarıiletken (MYY) Al/Si3N4/p-Si Schottky engel diyotlarının akım-voltaj (I-V)
karakteristikleri oda sıcaklığında ölçüldü. Al/Si3N4/p-Si yapılar elektrokimyasal anodizasyon metodu ile
üretilmiştir. p tipi silisyumun yüzeyi nitridasyon işlemiyle pasive edildi. Akım-Voltaj karakteristikleri
üzerine arayüzey durum yoğunluğu (Nss) ,arayüzey tabakası ve seri direncin etkileri incelendi. Al/Si3N4/pSi
(MIS) Schottky engel diyotlar, Al/p-Si arayüzey tabakasındaki Si3N4 varlığı yüzünden ideal Schottky
diyotlar yerine, idealite faktör değerinin 6.17 ve engel yüksekliği değerinin 0.714 eV olmasıyla
doğrultucu davranış göstermesi, (MIS) metal- arayüzey tabakası- yarıiletken yapısına uyar. Seri direncin
( Rs) değerleri Cheung’ in metodu kullanılarak tanımlandı. Buna ilave olarak, (Ess-Ev) nin bir fonksiyonu
olarak, arayüzey durumlarının yoğunluğu ( Nss), seri direncin hesaba katıldığı ve katılmadığı I-V
ölçümlerinden elde edildi. I-V karakteristikleri; Nss dağılımı , Rs ve arayüzey yalıtkan tabakanın, MIS
Schottky diyotların elektriksel karakteristiklerini etkileyen önemli parametreler olduğunu
doğrulanmıştır.
References
- Sze, S. M., 1981.Physics of Semiconductor Devices, 2nd Edn. Willey, New York, 850-860.
- Cowley, A. M., Sze, S. M.,1965. Surface states and of barrier systems. Journal of Applied Physics, 36, 3212. metal-semiconductor
- Card, H.C., Rhoderick, E. H., 1971.Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes.Journal of Physics D: Applied Physics,4, 1589-1598.
- Singh, A.,Reinhardt, K.C., Anderson W. A., 1990. Temperature dependence of the electrical characteristics metal-insulator-semiconductor Journal of Applied Physics. 68 (7), 3475-3477. junctions.
- Cova, P., Singh, A., 1990. Temperature dependence of IV and CV characteristics of Ni/n-CdF 2 Schottky barrier type diodes. Solid-State Electronics 33, 11-19.
- Ş.Karataş, Ş. Altındal, A. Türüt, A. Özmen, 2003. Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si (1 0 0) Schottky contacts. Applied Surface Science, 217, 250-260. Hudait,M.K.,
- Venkateswarlu, P., Krupanidhi,
- S.B.,2001. Electrical transport characteristics
- of Au/n-GaAs Schottky diodes on n-Ge at low
- temperatures. Solid-State Electronics, 45, 133- 141.
- Zhu, S., Van Meirhaeghe, R. L., Detavernier, C., Ru, G. P., Li, B. Z., Cardon, F., 1999.A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes. Solid State Communications, 112, 611-615.
- Akkal, B., Benemara, Z., Boudissa, A., Bouiadjra, N.B., Amrani, M., Bideux ,L., Gruzza, B.,1998. Modelization Au/InSb/InP Schottky systems as a function of temperature.Material Science and Engineering B, 55, 162-168.
- characterization of
- Altındal, Ş., Karadeniz, S., Tuğluoğlu, N., Tataroğlu, A.,2003.The role of interface states and series resistance on the I–V and C–Vcharacteristics in Al/SnO2/p-Si Schottky diodes. Solid-State Electronics, 47, 1847-1854.
- Zeyrek, S., Altındal, Ş., Yüzer, H., Bülbül, M.M., transport 2006.Current Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures. Applied Surface Science, 252, 2999-3010. mechanism in
- Lee, B.H., Kang, L., Nieh, R., Qi, W.J., Lee, J.C., 2000.Thermal characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing. Applied Physics Letters, 76, 1926.
- Yüzer, H., Doğan ,H., Köroğlu ,J., Kocakuşak, S., 2000. Analysis of sulfide layer on gallium arsenide spectroscopy. Spectrochimica Acta Part B, 55, 991-996. X-ray photoelectron
- Cheung, S.K., Cheung, N.W., 1986. Extraction of Schottky diode parameters from forward current-voltage characteristics.Applied Physics Letters,49 (2), 85-87.
- Kar, S., Pancal, K.M., Bhattacharya, S., Varma, S., 1982. On the mechanism of carrier transport in metal-thin-oxide semiconductor diodes on Polycrystalline silicon. Electron Devices, IEEE Transactions on, 29,1839-1945.
- Feteha, M.Y., Soliman, M., Gomaa ,N.G., Ashry ,M., 2002. Metal-insulator-semiconductor solar cell under gamma irradiation. Renewable Energy, 26, 113-120.
- Beji ,L.,Ben Jomaa, T, Harrabi, Z., Laribi ,A., Missaoui ,A., Bouazizi ,A., 2006. DC and AC electrical characteristics of porous GaAs/p+– GaAs heterostructure. Vacuum 80, 480-487.
- Türüt A., Yalçin N., Saǧlam M. 1992. Parameter extraction from non-ideal C− V characteris cs of a Schottky diode with and without interfacial electronics,35(6),835-841. Solid-state
- Çakar,M.,Onganer, Y., Türüt, A., 2002. The nonpolymeric organic compound (pyronine- B)/p-type silicon/Sn contact barrier devices. Synthetic Metals, 126, 213-218.
- Cova, P., Singh, A., Medina, A., Masut, R. A., 1998. Effect of doping on the forward current- transport mechanisms in a metal–insulator– semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy. Solid-State Electronics, 42, 477-485.
- Karataş, Ş., Altındal, Ş., Çakar, M, , 2005. Current transport in Zn/p-Si(1 0 0) Schottky barrier diodes at high temperatures. Physica B: Condensed Matter, 357, 386-397.
- Karataş, Ş., Altındal, Ş., 2005. Analysis of I– V characteristics on Au/n-type GaAs Schottky structures in wide temperature range. Materials Science and Engineering :B, 122, 133-139.
- Karataş, Ş.,Türüt, A., 2006. The determination of electronic distributions of Au/n-type GaAs Schottky barrier diodes. Physica B: Condensed Matter, 381,199-203. state density
- Dökme, İ., 2007. The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes. Physica B: Condensed Matter, 388, 10-15.
- Tataroğlu, A., Altındal, Ş., 2008. Analysis of interface states and series resistance of MIS Schottky diodes using the current–voltage (I– V)characteristics. Microelectronic Engineering, 85, 233-237. Ebeoğlu, M.A., 2008. characteristics of Au/GaN/GaAs structure. Physica B: Condensed Matter, 403, 61-66.
- Hackam, R., Harrop, P., 1972. Electrical properties of nickel-low-doped n-type gallium arsenide Schottky-barrier diodes. Electron Devices. IEEE Transactions on,19 (12), 1231-1238.
- Arshak, K., Korostynska, O., Fahim ,F., 2003. Various Structures Based on Nickel Oxide Thick Films as Gamma Radiation. Sensors 2, 176- 186.
- Hudait, M.K., Krupanidhi, S.B, 2001. Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates. Materials Science and Engineering :B, 87, 141- 147.
- Taşçıoğlu, İ., Farooq WA., Turan R., Altındal Ş.,Yakuphanoğlu F.,2014. Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes. Journal of Alloys and Compounds,590,157-161.
Year 2015,
Volume: 15 Issue: 2, 1 - 9, 30.08.2015
Abstract
References
- Sze, S. M., 1981.Physics of Semiconductor Devices, 2nd Edn. Willey, New York, 850-860.
- Cowley, A. M., Sze, S. M.,1965. Surface states and of barrier systems. Journal of Applied Physics, 36, 3212. metal-semiconductor
- Card, H.C., Rhoderick, E. H., 1971.Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes.Journal of Physics D: Applied Physics,4, 1589-1598.
- Singh, A.,Reinhardt, K.C., Anderson W. A., 1990. Temperature dependence of the electrical characteristics metal-insulator-semiconductor Journal of Applied Physics. 68 (7), 3475-3477. junctions.
- Cova, P., Singh, A., 1990. Temperature dependence of IV and CV characteristics of Ni/n-CdF 2 Schottky barrier type diodes. Solid-State Electronics 33, 11-19.
- Ş.Karataş, Ş. Altındal, A. Türüt, A. Özmen, 2003. Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si (1 0 0) Schottky contacts. Applied Surface Science, 217, 250-260. Hudait,M.K.,
- Venkateswarlu, P., Krupanidhi,
- S.B.,2001. Electrical transport characteristics
- of Au/n-GaAs Schottky diodes on n-Ge at low
- temperatures. Solid-State Electronics, 45, 133- 141.
- Zhu, S., Van Meirhaeghe, R. L., Detavernier, C., Ru, G. P., Li, B. Z., Cardon, F., 1999.A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes. Solid State Communications, 112, 611-615.
- Akkal, B., Benemara, Z., Boudissa, A., Bouiadjra, N.B., Amrani, M., Bideux ,L., Gruzza, B.,1998. Modelization Au/InSb/InP Schottky systems as a function of temperature.Material Science and Engineering B, 55, 162-168.
- characterization of
- Altındal, Ş., Karadeniz, S., Tuğluoğlu, N., Tataroğlu, A.,2003.The role of interface states and series resistance on the I–V and C–Vcharacteristics in Al/SnO2/p-Si Schottky diodes. Solid-State Electronics, 47, 1847-1854.
- Zeyrek, S., Altındal, Ş., Yüzer, H., Bülbül, M.M., transport 2006.Current Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures. Applied Surface Science, 252, 2999-3010. mechanism in
- Lee, B.H., Kang, L., Nieh, R., Qi, W.J., Lee, J.C., 2000.Thermal characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing. Applied Physics Letters, 76, 1926.
- Yüzer, H., Doğan ,H., Köroğlu ,J., Kocakuşak, S., 2000. Analysis of sulfide layer on gallium arsenide spectroscopy. Spectrochimica Acta Part B, 55, 991-996. X-ray photoelectron
- Cheung, S.K., Cheung, N.W., 1986. Extraction of Schottky diode parameters from forward current-voltage characteristics.Applied Physics Letters,49 (2), 85-87.
- Kar, S., Pancal, K.M., Bhattacharya, S., Varma, S., 1982. On the mechanism of carrier transport in metal-thin-oxide semiconductor diodes on Polycrystalline silicon. Electron Devices, IEEE Transactions on, 29,1839-1945.
- Feteha, M.Y., Soliman, M., Gomaa ,N.G., Ashry ,M., 2002. Metal-insulator-semiconductor solar cell under gamma irradiation. Renewable Energy, 26, 113-120.
- Beji ,L.,Ben Jomaa, T, Harrabi, Z., Laribi ,A., Missaoui ,A., Bouazizi ,A., 2006. DC and AC electrical characteristics of porous GaAs/p+– GaAs heterostructure. Vacuum 80, 480-487.
- Türüt A., Yalçin N., Saǧlam M. 1992. Parameter extraction from non-ideal C− V characteris cs of a Schottky diode with and without interfacial electronics,35(6),835-841. Solid-state
- Çakar,M.,Onganer, Y., Türüt, A., 2002. The nonpolymeric organic compound (pyronine- B)/p-type silicon/Sn contact barrier devices. Synthetic Metals, 126, 213-218.
- Cova, P., Singh, A., Medina, A., Masut, R. A., 1998. Effect of doping on the forward current- transport mechanisms in a metal–insulator– semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy. Solid-State Electronics, 42, 477-485.
- Karataş, Ş., Altındal, Ş., Çakar, M, , 2005. Current transport in Zn/p-Si(1 0 0) Schottky barrier diodes at high temperatures. Physica B: Condensed Matter, 357, 386-397.
- Karataş, Ş., Altındal, Ş., 2005. Analysis of I– V characteristics on Au/n-type GaAs Schottky structures in wide temperature range. Materials Science and Engineering :B, 122, 133-139.
- Karataş, Ş.,Türüt, A., 2006. The determination of electronic distributions of Au/n-type GaAs Schottky barrier diodes. Physica B: Condensed Matter, 381,199-203. state density
- Dökme, İ., 2007. The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes. Physica B: Condensed Matter, 388, 10-15.
- Tataroğlu, A., Altındal, Ş., 2008. Analysis of interface states and series resistance of MIS Schottky diodes using the current–voltage (I– V)characteristics. Microelectronic Engineering, 85, 233-237. Ebeoğlu, M.A., 2008. characteristics of Au/GaN/GaAs structure. Physica B: Condensed Matter, 403, 61-66.
- Hackam, R., Harrop, P., 1972. Electrical properties of nickel-low-doped n-type gallium arsenide Schottky-barrier diodes. Electron Devices. IEEE Transactions on,19 (12), 1231-1238.
- Arshak, K., Korostynska, O., Fahim ,F., 2003. Various Structures Based on Nickel Oxide Thick Films as Gamma Radiation. Sensors 2, 176- 186.
- Hudait, M.K., Krupanidhi, S.B, 2001. Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates. Materials Science and Engineering :B, 87, 141- 147.
- Taşçıoğlu, İ., Farooq WA., Turan R., Altındal Ş.,Yakuphanoğlu F.,2014. Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes. Journal of Alloys and Compounds,590,157-161.
There are 33 citations in total.
Details
| Subjects | Engineering |
|---|---|
| Journal Section | Articles |
| Authors | |
| Publication Date | August 30, 2015 |
| Submission Date | February 5, 2015 |
| Published in Issue | Year 2015 Volume: 15 Issue: 2 |