Düşük Sıcaklıklarda Au/Organometalik Kompleks/n-Si MIS Yapısının Elektriksel Özelliklerinin İncelenmesi

Year 2018, Volume: 18 Issue: 3, 1190 - 1202, 30.12.2018

Cihat Özaydın

Abstract

Geniş bir sıcaklık aralığında (100-300 K) metal-arayüzey tabaka-yarıiletken (MIS) Schottky diyotunun elektriksel özellikleri akım-gerilimölçümleri ile incelenmiştir.MIS Schottky diyotu, 300 K ve 100 K'de sırasıyla 2.28 ve 4.13'e eşit idealite faktörleri (n) ile birlikte ideal olmayan akım-gerilim davranışı göstermiştir.Diyotun deneysel engel yüksekliği değerleri, 100 K'da 0.32 eV, 300 K'da 0.76 eV olarak belirlenmiştir. Azalan sıcaklıkla birliktedeneysel engel yüksekliğinde (BH,Φ𝑏) anormal bir azalma ve idealite faktöründebir artış gözlemlenmiştir. Gözlemlenen bu davranış, engel yüksekliği homojensizliklerine atfedilmiş ve arayüzeyde yerel engel yüksekliklerinin Gauss dağılımı olduğunu varsayılarak termiyonik emisyonmekanizması temelinde açıklanmıştır.MIS diyotunun sıcaklığa bağlı akım-gerilim karakteristikleri, sırasıyla 1.17 eV ve 0.81 eV ortalama engel yükseklikleri ile birlikte 146 mV ve 94 mV standart sapmaları verenikili Gauss dağılımı göstermiştir.İki sıcaklık bölgesi için modifiye edilmiş ln(I0/T2) -q2σs2 2k2T2'ye karşı 1/kT eğrisinden sırasıyla 200-300K sıcaklık bölgesindeΦ̅𝑏 and A∗1.18 eV ve 20.8 A/cm2K2ve 100-200K sıcaklık bölgesinde 0.82 eV ve 11.8 A/cm2K2 olarak belirlenmiştir.Ayrıca, MIS diyotunun karakterizasyonu için kapasitans-gerilim ölçümleri uygulanmıştır.C-V ölçümleri analizinden elde edilen 0.88 eV engel yüksekliği değeri, oda sıcaklığında akım-gerilim ölçümlerinden elde edilen 0.76 eV'den daha yüksek olarak elde edilmiştir.

Keywords

Organometalik kompleks, MIS yapı;, Akım-Gerilim, Düşük sıcaklık, Gauss dağılımı

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