Cu2ZnSnS4 ve Cu2MnSnS4 İnce Filmlerin Sentez ve Karakterizasyonu

Year 2025, Volume: 25 Issue: 2, 269 - 278

Canan Aytuğ Ava

Abstract

Farklı metallerin ikamesi ile düşük maliyetli ve kolay kontrollü biriktirme sistemlerinin kullanılması avantaj sağlamaktadır. Bu çalışmada Cu2ZnSnS4 filmleri ve alternatif bir soğurucu katman olarak Cu2MnSnS4 ince filmleri dönel kaplama yöntemiyle 240◦C alttaş sıcaklığı altında 30 ve 40 ccm Ar:H2S akış altında tavlanarak başarıyla biriktirildi. CZTS tabanlı ince film güneş pillerinin geliştirilmesinde, antisit kusurlarının katyon ikamesi yoluyla azaltılması büyük ilgi görmüştür. Bu incelemede, Zn yerine Mn metalin kullanılmasının etkisi tartışıldı. Teorik olarak Shockley-Queisser sınır değerlerine göre CZTS 1,52-1.54 eV bant aralığına, Cu2MnSnS4 (CMTS) ise 1.37-1,48 eV bant aralığına ve her iki malzemede (104cm-1) üzerinde büyük bir soğurma katsayısına sahiptir. Bu durum CMTS ince filmini de olası bir fotovoltaik malzeme haline getirir. Filmler doğrudan optik bant aralıklarına sahiptir. Yapısal analiz sonucunda örneklerin mikro yapı, gerinim değeri, kristal büyüklüğü ve dislokasyon yoğunluğu hesaplandı. Filmler (112) tercihli büyüme düzlemine sahip olup yapısı CZTS kesterite, CMTS ise stannite yapıda olduğu görüldü. Hazırlanan Cu2ZnSnS4 ve Cu2MnSnS4 filmlerinin yapıları, morfolojileri ve optik özellikleri XRD, SEM, EDS ve UV-Vis, ölçümleri kullanılarak karakterizasyonu ayrıntılı olarak incelenmiştir.

Keywords

CMTS, Kristal yapı, İnce film, Dönel kaplama, Optik

Thanks

Dicle Üniversitesi Bilim ve Teknoloji Uygulama ve Araştırma Merkezi'ne katkılarından dolayı teşekkür ederim.

Synthesis and Characterization of Cu2ZnSnS4 and Cu2MnSnS4 Thin Films

Abstract

It is advantageous to use low-cost and easily controlled deposition systems by substituting different metals. In this study, Cu2ZnSnS4 films and Cu2MnSnS4 thin films as an alternative absorber layer were successfully deposited by spin coating method under 240◦C substrate temperature and annealed under 30 and 40 ccm Ar:H2S flow. In the development of CZTS-based thin-film solar cells, the reduction of antisite defects through cation substitution has attracted great attention. In this review, the effect of using Mn metal instead of Zn is discussed. Theoretically, according to Shockley-Queisser limit values, CZTS has a band gap of 1.52-1.54 eV, while Cu2MnSnS4 (CMTS) has a band gap of 1.37-1.48 eV and a large absorption coefficient above (104cm-1) in both materials. This makes the CMTS thin film a possible photovoltaic material. Films have direct optical bandgaps. As a result of the structural analysis, the microstructure, strain value, crystal size and dislocation density of the samples were calculated. The films (112) have a preferential growth plane and their structure was observed to be CZTS kesterite and CMTS stannite. The structures, morphologies and optical properties of the prepared Cu2ZnSnS4 and Cu2MnSnS4 films were characterized in detail using XRD, SEM, EDS and UV-Vis measurements.

Keywords

CMTS, Crystal Structure, Thin Film, Spin Coating, Optics

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