In this study it was aiined to investigate the cffect of surface States on the current-voltage characteristics of the Schottky diodes prcpared by an r.f. magnetron suputtering technique.
In order to fabricate A u/a-Si: H / a-SiII (nh-type) structure n '-type doped and intrincsic hydrogcnated amorphous Silicon films.
Primary Language | English |
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Subjects | Engineering |
Journal Section | Research Articles |
Authors | |
Publication Date | January 1, 1994 |
Submission Date | January 1, 1994 |
Published in Issue | Year 1994 Volume: 43 |
Communications Faculty of Sciences University of Ankara Series A2-A3 Physical Sciences and Engineering
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