Investigation of lattice constants and bowing parameters of TlxIn1-xAs in zincblende structure by Density Functional Theory
Abstract
In this study, the structural and electronic properties of semiconducting TlxIn1-xAs alloys were derived from the minimum total energy with density functional theory by approaching the local density approach. A 16 atom super cell was used to model the ternary TlxIn1-xAs alloy.The lattice parameters, band gap energies and band gap bowing parameters were investigated.The lattice constants at different concentrations of the alloy are also well suited to Vegard's law.The band gap bowing parameters are very strong in terms of dependence on the concentration of Thallium.The average bowing parameter of the TlxIn1-xAs alloys is b = ~ 1.0396 eV.The results also show that the concentration-dependent bowing parameter of the TlxIn1-xAs alloys can be expressed by the third-order polynomial equation b (x) = - 12.84817x3 + 24.29015x2-15.86767x + 4.17591 eV.
Keywords
References
- Saidi-Houat, N., Zaoui, A. and Ferhat, M., Structural stability of thallium-V compounds, Journal of Physics:Condensed Matter, 19, 106221/1–18 (2007).
- Chandvankar, S.S., Sharma, T.K., Shah, A.P., Chandrasekaran, K.S., Arora, B.M., Kapoor, A.K., Verma, D. and Sharma, B.B., Indium thallium phosphide: experiments versus predictions, Journal of Crystal Growth 213, 3, 250-258 (2000).
- Koh, H., Asahi, H., Fushida, M., Yamamoto, K., Takenaka, K., Asami, K., Gonda, S. and Oe, K., Photoconductance measurement on TlInGaP grown by gas source MBE, Journal of Crystal Growth, 188, 107-112, (1998).
- Berding, M.A., van Schilfgaarde, M., Sher, A., Antonell, M.J. and Abernathy, C.R., Thermodynamical properties of thallium-based III-Vmaterials, Journal of Electronic Materials, 26, 6, 683-687, (1997).
- Ferhat, M. and Zaoui, A., Do all III-V compounds have the zinc-blende or wurtzite ground state structure?, Applied Physics Letters, 88, 161902, (2006).
- Krishnamurthy, S., Chen A., B. and Sher, A., Near band edge absorption spectra of narrow-gap III–V semiconductor alloys, Applied Physics Letters, 80, 7, 4045-4048, (1996).
- Schilfgaarde, M.V., Chen, A.B., Krishnamurthy, S. and Sher, A., InTlP – a proposed infrared detector, Applied Physics Letters, 65, 2714-2716, (1994).
- Saidi-Houata, N., Zaoui, A., Belabbes, A., and Ferhat, M., Ab initio study of the fundamental properties of novel III–V nitride alloys Ga1−xTlxN, Materials Science and Engineering B, 162, 1, 26-31, (2009).
Details
Primary Language
English
Subjects
Engineering
Journal Section
Research Article
Authors
Publication Date
December 1, 2018
Submission Date
February 6, 2018
Acceptance Date
May 15, 2018
Published in Issue
Year 2018 Volume: 20 Number: 2