Schottky diyot tabanlı UV detektörlerde seri direnç etkileri

Yıl 2019, Cilt: 21 Sayı: 2, 531 - 538, 28.06.2019

Şadan Özden

https://doi.org/10.25092/baunfbed.624406

Öz

Bu çalışmada GaN tabanlı UV algılayıcı GUVA S12SD Schottky diyotun sıcaklık bağımlı akım – voltaj karakteristikleri seri direnç etkileri yönünden incelenmiştir.  Bu amaçla FPGA tabanlı, basit ve düşük maliyetli bir ölçüm sistemi hazırlanarak, başarıyla kullanılmıştır.  Sonuçlar, aygıtın akım iletim mekanizmasının termiyonik yayılımla açıklanabileceğini göstermektedir.  Seri direnç hesapları için iki farklı yöntem kullanılmış ve birbiri ile büyük uyuma sahip sonuçlar elde edilmiştir.  İdealite faktörü ve seri direncin sıcaklık bağımlılığından, ara yüzeydeki durumların ve buradaki yük taşıyıcılarının aygıt karakteristikleri üzerinde etkin olduğu belirlenmiştir.

Anahtar Kelimeler

UV, Schottky diyot, GaN, seri direnç, FPGA

Serial resistance effects on Schotky diode based UV dedectors

Öz

In this study, the temperature dependent current - voltage characteristics of GaN based UV sensor GUVA S12SD Schottky diode were investigated in terms of series resistance effects.  For this purpose, a FPGA based simple and low cost measurement system has been prepared and employed successfully.  The results show that the current transport mechanism of the device can be explained by means of thermionic emission.  Two different methods were used for the series resistance calculations and their results were consistent with each other.  According to the temperature dependent ideality factor and series resistance, it has been determined that interface states and charge carriers on the states effect on device characteristics. 

Anahtar Kelimeler

UV, Schottky diode, GaN, serial resistance, FPGA

Kaynakça

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