Farklı Konfigürasyona Sahip İki Bölümlü Ve Üç Bölümlü Diyot Lazerlerde Optik Darbe Üretiminin Deneysel İncelenmesi

Abstract

Bu çalışmada, 1350 nm dalga boyunda çalışan iki ve üç kesitli InGaAsP/InP diyot lazerlerinden elde edilen optik darbe ölçümleri, kavite uzunluğu 315 µm’de sabit tutulurken, kazanç ve soğurucu bölümlerin konumları değiştirilerek sunulmuştur. 100 µs darbe genişliğine sahip 2 kHz'lik bir sinyal, 20 mA DC akımla birlikte kazanç bölümlerine uygulanırken, soğurucu bölüme 0 ile -1,5 V arasında değişen bir ters kutuplu gerilim uygulanmıştır. Kazanç bölümüne uygulanan akım ve soğurucu bölüme uygulanan ters kutuplu gerilim her iki lazer tipi için de belirli değerlerde sabit tutulmuş ve ortaya çıkan darbe genlikleri ve süreleri analiz edilmiştir. Soğurucu bölümün ortada (iki kazanç bölümü arasında) konumlandırıldığı üç kesitli lazerlerden elde edilen darbeler, iki kesitli lazerlerden elde edilenlerden daha yüksek genlikler sergilemiş ve darbe genişlikleri yaklaşık %5 daha dar olmuştur. Buna karşılık, soğurucu bölümü uçta olan lazerler, tek kazançlı lazerlere kıyasla daha yüksek çıkış gücü ürettiler, ancak darbe genişlikleri, soğurucu bölümü ortada olan lazerlere göre daha geniş elde edilmiştir.

Keywords

• Diyot lazer
• Lazer
• Çok bölümlü
• Darbe üretimi
• Yarı iletken

Experimental Investigation Of Optical Pulse Generation In Two-Section And Three-Section Diode Lasers With Different Configuration

Abstract

In this study, optical pulses measurements obtained from two-section and three-section InGaAsP/InP diode lasers operating at a wavelength of 1350 nm are presented, with the cavity length kept constant at 315 µm, while the positions of the gain and absorber sections are varied. A 2 kHz signal with a 100 µs pulse width was applied to the gain sections along with a 20 mA DC current, while a reverse bias voltage ranging from 0 to -1.5 V was applied to the absorber section. The current applied to the gain section and the reverse bias voltage applied to the absorber section were kept constant at certain values for both laser types, and the resulting pulse amplitudes and durations were analyzed. The pulses obtained from the three-section lasers, where the absorber section was positioned in the middle (between the two gain sections), exhibited higher amplitudes than those obtained from the two-section lasers, and their pulse widths were approximately 5% narrower. In contrast, lasers with the absorber at the end produced higher output power compared to single-gain lasers, but wider pulse widths were obtained than lasers with the absorber at the middle.

Keywords

• Diode laser
• Laser
• Multisection
• Pulse generation
• Semiconductor

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