Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature

Year 2019, Volume: 15 Issue: 2, 151 - 160, 30.06.2019

Asim Mantarcı

https://doi.org/10.18466/cbayarfbe.486961

Abstract

Indium Gallium Nitride  thin film was successfully grown on the  substrate using an RF magnetron sputter under
condition of different substrate temperatures. Various experimental
measurements were taken to understand effect of substrate temperature on the
structure of thin film and results were analyzed. Grazing mode of XRD results
confirmed that  thin film has a hexagonal structure with  plane for  and substrate
temperature. It was seen that structural parameters of thin film show a change
with substrate temperature change. Reasons were discussed. Strain and stress
values in  thin film were calculated from experimental
results and it was found that all thin film has compressive stress.
Morphological parameters of thin film were measured by AFM and it was
understood that these properties are varied by changing substrate temperature.
Also, growth mode of some thin film was found to be layer-plus-island mode
(Stranski-Krastanov growth mode), others was found to be layer by layer growth
mode (Frank van der Merwe mode). SEM analysis gives that increasing substrate
temperature worsened the surface structure of  thin film; it is compatible with and supports
XRD results. Compositional values in  thin film were found from XPS analysis. In
addition to our material, carbon and oxygen have also been obtained from XPS results,
as expected. Detailed structural and morphological properties of thin
film have been seen to change by changing substrate temperature and we believe
this may play an important role in the production of  based optoelectronic devices.

Keywords

InGaN, thin film technology, RF magnetron sputtering, substrate temperature

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