A high frequency full wave model for nanometric Silicon PIN diode

Abstract

Abstract|In recent, the eect of electromagnetic radiation on semiconduc- tor active devices and the coupling eect, which occurs at high frequency be- tween dierent circuit elements, become more and more important. This paper presents a high frequency full wave model for Silicon PIN diode. Ended,we present a three dimensional solutions for the electromagnetic eld equations (Maxwell's equations) considering nite dierence time domain (FTDT) method to describe the circuit passive part. So, we include the electromagnetic eect by solving Maxwell's equations while taking into account the interaction between electromagnetic wave and the active device. We propose, in this paper, a mathematical method to couple a three-dimension (3-D) Finite Dierence Time Domain(FDTD) solution of Maxwell's equations to the Drift Diusion Model (DDM) concerning the PIN diode. The coupling between the two models is established by introducing the Maxwell equations in a relation connecting the current circulating in the diode to the tension on its terminals. The active device in the microwave circuits is typically very small in size . Then it can be modeled by its equivalent lumped device with a very high degree of accuracy. Thus, in the conventional lumped element-FDTD (LE-FDTD) ap- proach. Design and analysis of dynamic resistor of PIN diode coupled with a microstrip line are presented, the simulation result show that the critical frequency of the microwave circuit is 20 GHz.

Keywords

• FTDT
• Silicon PIN
• Electromagnetic, boundary conditions

References

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