A high frequency full wave model for nanometric Silicon PIN diode

Abstract

Abstract|In recent, the eect of electromagnetic radiation on semiconduc- tor active devices and the coupling eect, which occurs at high frequency be- tween dierent circuit elements, become more and more important. This paper presents a high frequency full wave model for Silicon PIN diode. Ended,we present a three dimensional solutions for the electromagnetic eld equations (Maxwell's equations) considering nite dierence time domain (FTDT) method to describe the circuit passive part. So, we include the electromagnetic eect by solving Maxwell's equations while taking into account the interaction between electromagnetic wave and the active device. We propose, in this paper, a mathematical method to couple a three-dimension (3-D) Finite Dierence Time Domain(FDTD) solution of Maxwell's equations to the Drift Diusion Model (DDM) concerning the PIN diode. The coupling between the two models is established by introducing the Maxwell equations in a relation connecting the current circulating in the diode to the tension on its terminals. The active device in the microwave circuits is typically very small in size . Then it can be modeled by its equivalent lumped device with a very high degree of accuracy. Thus, in the conventional lumped element-FDTD (LE-FDTD) ap- proach. Design and analysis of dynamic resistor of PIN diode coupled with a microstrip line are presented, the simulation result show that the critical frequency of the microwave circuit is 20 GHz.

Keywords

• FTDT
• Silicon PIN
• Electromagnetic, boundary conditions

Kaynakça

1. [1] Yee, K. S., "Numerical solution of initial boundary value problems involving Maxwell's equations in isotropic media," IEEE Trans. Antennas Propagat., Vol. 14, 302-307, May 1966.
2. [2] Sheen, D. M., S. M. Ali, M. D. Abouzahra, and J. A. Kong, "Application of the three- dimensional nite-dierence time-domain method to the analysis of planar microstrip circuits," IEEE Trans. Microwave Theory Tech., Vol. 38, 849-857, 1990.
3. [3] Samir Labiod, Saida Latreche, Christian Gontrand , "Numerical model- ing of MOS transistor with interconnections using lumped element-FDTD method," Microelectronics Journal 43 (2012) 995{1002.
4. [4] M. Sze, and Kwork K. Ng, "Physics of Semiconductor Devices", 3rd ed., Wiley, 2007, pp.40-63. S.M. Sze, Kwok K.Ng, Physics of Semiconductor Devices, John Wiley Sons, Inc., Hoboken, New Jersey, 2007.
5. [5] M. ALSUNAIDI, S. IMTIAZ, S. EL-GHAZALY." Electromagnetic wave time domain model, IEEE transaction on microwave theory and tech- niques," vol 44, N6, pp. 799-808, Jun 1996.
6. [6] A. YASSER, E. JAMES," Ecient Modeling of PIN Diode Switches Employing Time-Domain Electromagnetic-Physics-Based Simulators," SLAC-PUB-11281, Jun 2005.
7. [7] L. Shen and J. Kong, \Applied Electtomagnetism", PWS Publishers, Boston, Massachusetts, (1983). [8] Li, J. and C. Miao, \A New Implementation Of The Uniaxial Perfectly Matched Layer", Microwave and Millimeter Wave Technology, pp. 770-773, (2008).
8. [9] D.M. Sullivan," Electromagnetic Simulation Using the FDTD Method," IEEE Press Series on RF and Microwave Technology, New York, 2000.

9. [10] O. Gonzalez, J.A. Pereda, A. Herrera, A. Vegas," An extension of the lumped network FDTD method to linear two-port lumped circuits," IEEE Trans. Microwave Theory Tech. (2006) 3045{3051.
10. [11] P. CIAMPOLINI, L. ROSELLI, AND G. STOPPONI," Mixed-Mode cir- cuit simulation with full-wave analysis of interconnections," IEEE TRANS. ELECTRON DEVICES, VOL. 44, PP. 2098-2105, NOVEMBER 1997.
11. [12] W. Yuan and E. Li, \FDTD Simulations For Hybrid Circuits With Lin- ear And Nonlinear Lumped Elements", Microwave and Optical Technology Letters, Vol. 32, No.6, pp. 408-412, (2002).
12. [13] P. Ciampolini, P. Mezzanotte, L. Roseli and R. Sorrentino, \Accurate And Ecient Circuit Simulation With Lumped Element Fdtd Technique", IEEE Transactions on Microwave Theory and Techniques, Vol. 44, No. 12, pp. 2207-2215, (1996).
13. [14] V. A. Thomas and all, \The Use Of Spice Lumped Circuits As Sub-Grid Models For FDTD Analysis", IEEE Microwave and Guided Wave Letters, Vol. 4, No, 5, pp. 141-143, (1994).