Preparation and Characterization of N-Type SnS2 Semiconductor Thin Films

Yıl 2016, Cilt: 31 Sayı: 1, 83 - 92, 15.06.2016

Cebrail Gümüş , Gülay Altındemir

https://doi.org/10.21605/cukurovaummfd.317735

Öz

SnS2 semiconductor thin films were prepared by the chemical bath deposition (CBD) technique onto glass substrates deposited at 50–80oC. X-ray diffraction spectra of the films have shown that the films are amorphous in structure. To determine the optical properties of the SnS2 films UV-vis spectrophotometer was used. Optical transmittance (%T) and optical absorption (A) values of the films were determined in the wavelength range 400-1100 nm at room temperature. The obtained data with optical parameters of the films absorption coefficient (α), refractive index (n), extinction coefficient (k), real, imaginary dielectric constants (Ԑ1, Ԑ2) and the energy band gap (Eg) values were calculated. From the Hall effect measurement, it was found that SnS2 thin films exhibits n-type conduction.

Anahtar Kelimeler

CBD, SnS2 thin film, Structural properties, Optical properties

N-Tipi SnS2 Yarıiletken İnce Filmlerin Hazırlanması ve Karakterizasyonu

Öz

SnS2 yarıiletken ince filmleri, kimyasal depolama yöntemi (KDY) kullanılarak 50-80oC’de cam alttabanlar üzerine elde edildi. X-ışını kırınım spektrumu filmlerin amorf yapıda olduklarını göstermiştir. SnS2 filmlerin optik özelliklerini belirlemek için UV-vis spektrofotometresi kullanılmıştır. Filmlerin oda sıcaklığındaki optik geçirgenlik (%T) ve optik soğurma (A) değerleri 400-1100 nm dalga boyu aralığında belirlenmiştir. Elde edilen veriler ile filmlerin optik parametreleri olan soğurma katsayısı (α), kırılma indisi (n), sönüm katsayısı (k), reel, imajiner dielektrik sabitleri (Ԑ1, Ԑ2) ve enerji bant aralığı (Eg) değerleri hesaplandı. Hall etkisi ölçümlerinden SnS2 filmleri n-tipi iletkenliğe sahip olduğu bulunmuştur.

Anahtar Kelimeler

KDY, SnS2 ince film, Yapısal özellikler, Optiksel özellikler

Kaynakça

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