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Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-complex / p-Si Photodiode

Year 2017, Volume: 38 Issue: 2, 329 - 341, 24.04.2017

Hülya Doğan , İkram Orak , Nezir Yıldırım

https://doi.org/10.17776/cumuscij.297189
Cited By: 2

Abstract

This study is about the deposition of tris
(2,2’-bipyridine) Ruthenium(II)-complex thin film on p-type crystalline silicon (Si) by spin coating method
(Al/Ru(II)/p-Si). The characteristics parameters were evaluated from the current-voltage (I–V) under
dark and illumination at room temperature. First, the optical properties
of the organic thin film were determined from its optical absorption spectrum,
and its band gap was found to be 2.74 eV. Then, the electrical parameters of
the Al/Ru(II)/p-Si photodiode, such as the ideality factor (n), barrier height (ΦbI-V), diffusion potential, barrier height (ΦbC-V) and carrier concentration (Na) were
calculated from the I–V and C–V measurement at room temperature. Both
measurements barrier height values were compared. Cheung method was used to
determine the series resistance (Rs), barrier height and ideality
factor, under dark and 100 mW/cm2 illumination conditions. The
photovoltaic parameters of the studied device were investigated under
illumination conditions. The open-circuit voltage and short circuit current
values for the Al/Ru(II)/p-Si were found to be 439.9 x 10-3 V and
36.6 x 10-6 A respectively. Ruthenium(II) complex positively
influences the photovoltaic performance. 
These results reveal that the Al/Ru(II)/p-Si built can be used as a
photodiode in photovoltaic and photodetector applications.



Keywords

Ruthenium(II)-complex photodiodes illumination effect on electrical characteristics series and shunt resistances

References

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  • [2]. J.J. Concepcion, J.W. Jurss, M.K. Brennaman, P.G. Hoertz, A.O.T. Patrocinio, N.Y. Murakami Iha, J.L. Templeton, T.J. Meyer, Acc. Chem. Res. 42 (2009) 1954–1965.
  • [3]. P.D. Beer, J. Cadman, Coord. Chem. Rev. 205 (2000) 131–155.
  • [4]. R. Argazzi, N.Y. Murakami Iha, H. Zabri, F. Odobel, C.A. Bignozzi, Coord. Chem. Rev. 248 (2004) 1299–1316.
  • [5]. M. Kapilashrami, Y. Zhang, Y.-S. Liu, A. Hagfeldt, J. Guo, Chem. Rev. 114 (2014) 9662–9707.
  • [6]. A. Fakharuddin, R. Jose, T.M. Brown, F. Fabregat-Santiago, J. Bisquert, Energy Environ. Sci. 7 (2014) 3952–3981.
  • [7]. B. O’Regan, M. Gratzel, Nature 353 (1991) 737.
  • [8]. R.Koeppe, N.S.Sariciftci, P.A.Troshin, R.N.L.Yubovskaya, Applied Physics Letters 87 (2005) 244102.
  • [9]. F.Yakuphanoğlu, Solar Energy Materials&SolarCells 91 (2007) 1182.
  • [10]. Y.S. Ocak, M. A. Ebeoglu, G.Topal, T.Kılıcoglu, Physica B 405 (2010) 2329-2333.
  • [11]. A. Tataroglu, O. Dayan, N. Ozdemir, Z. Serbetci, Ahmed A. Al-Ghamdi, A. Dere, Farid El-Tantawy, F. Yakuphanoglu, Dyes and Pigments 132 (2016) 64-71
  • [12]. M.Soylu, I. Orak, O. Dayan, Z. Serbetci, Microelectronics Reliability 55 (2015) 2685-2688.
  • [13]. Orak, A. Turut, M. Toprak, Synthetic Metals 200 (2015) 66-73.
  • [14]. Ş. Aydoğan, M. Sağlam, A. Türüt, Microelectron. Reliab. 52 (2012) 1362-1366.
  • [15]. I.H. Campbell, S. Rubin, T.A. Zawodzinski, J.D.Kress, R.L. Martin, D. L. Smith, Phys. Rev. B 54 (1996) 14321.
  • [16]. Ö. Vural, N.Yıldırım, S.Altındal, A.Türüt, Synth. Met 157 (2007) 679.
  • [17]. M. Soylu, Mater. Sci. Semicond. Process. 14 (2011) 212.
  • [18]. Ö. Güllü, Ö. Barıs, M. Biber, A.Türüt, Appl. Surf. Sci. 254 (2008) 3039.
  • [19]. A.B.P. Lever, M.R. Hempstead, C.C. Leznoff, W. Lin, M. Melnik, W. A. Nevin, P. Seymour, Pure Appl. Chem. 58 (1986) 1467.
  • [20]. J. Simon, J.J. Andre, Molecular Semiconductors, Springer, Berlin, 1985.
  • [21]. Y. Sadaoka, T.A. Jones, W.Gopel, Sensors Actuators B 1 (1990) 148.
  • [22]. P.F. Baude, D.A. Ender, M.A. Haase, Appl. Phys. Lett. 82 (2003) 3964.
  • [23]. Ö. Güllü, Ş. Aydoğan, A.Türüt, Microelectron. Eng. 85 (2008) 1647.
  • [24]. C. Temirci, M. Çakar, Physica B 348 (2004) 454.
  • [25]. C. Özaydın, K. Akkılıç, S. İlhan, Ş. Ruzgar, Ö. Güllü, H. Temel, Materials Science in Semiconductor Processing 16 (2013) 1125–1130.
  • [26]. W. Kern Overview and evolution of silicon wafer cleaning technology Handbook of Silicon Wafer Cleaning Technology (2008) 2
  • [27]. O.A. Azim, M.M. Abdel-Aziz, I.S. Yahia, Appl. Surf. Sci. 255 (2009) 4829-4835.
  • [28]. K.R. Rajesh, C.S. Menon, The European Physical Journal B-Condensed Matter and Complex Systems 47 (2005) 171–176.
  • [29]. E. H. Rhoderick, R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. Clarendon, Oxford, 1988.
  • [30]. I. Ay, H. Tolunay, Solid-State Electron. 51 (2007) 381–386.
  • [31]. H. Tecimer, S. Aksu, H. Uslu, Y. Atasoy, E. Bacaksız, Ş. Altındal, Sens. Actuators 185 (2012) 73.
  • [32]. G.-F. Dalla Betta, Advances in Photodiodes InTech, India (2011)
  • [33]. R.T. Tung Phys. Rev. B, 64 (2001), p. 205310
  • [34]. R. Kumar, S. Chand J. Mater. Sci. Mater. Electron, 25 (2014), pp. 4531-4537
  • [35]. S. K. Cheung, N. W. Cheung, Appl. Phys. Lett. 49 (1986) 85.
  • [36]. J. Nelson, The Physics of Solar Cells Imperical College Press, UK (2003)
  • [37]. B. Sahin, H. Cetin, E. Ayyıldız, Solid State Commun 135(2005) 490-495.
  • [38]. S.M. Sze, Physics of Semiconductor Devices,(2nded) Wileyand NY,1981.
  • [39]. J.P.P.R. Barry, J. Genoe, P. Heremans, Progr. Photovol. Res. Appl. 15 (2007) 659–676.
  • [40]. B. Wang, H. Ding, Y. Hu, H. Zhou, S. Wang, T. Wang, et al., Int. J. Hydrogen Energy 38 (2013) 16733-16739.
  • [41]. Wilmsen, C. W.,1985. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Plenum Press, New York.

Al/Ruthenium(II) complex/ p-Si Fotodiyotun Fotovoltaik ve Elektriksel Özellikleri

Year 2017, Volume: 38 Issue: 2, 329 - 341, 24.04.2017

Hülya Doğan , İkram Orak , Nezir Yıldırım

https://doi.org/10.17776/cumuscij.297189
Cited By: 2

Abstract

Bu çalışma, p-Si kristali üzerine tris
(2,2’-bipyridine) Ruthenium(II)-complex ince filmin döndürme kaplama yöntemi
ile (Al/Ru(II)/p-Si) yapısının oluşturulması ile ilgilidir.  Karakteristik parametreler oda sıcaklığında
karanlık ve aydınlatma durumundaki akım-gerilim (I-V) eğrilerinden belirlendi.
İlk olarak organik ince filmin optiksel özellikleri,  soğurma spektrumu kullanılarak, bant aralığı
2.74 eV olarak bulundu. Ondan sonra Al/Ru(II)/p-Si fotodiyotunun, idealite faktörü
(n), engel yüksekliği (ΦbI-V), difüzyon potansiyeli,
engel yüksekliği (ΦbC-V) ve taşıyıcı konsantrasyonu (Na)
gibi elektriksel parametreler, oda sıcaklığında (I-V) ve (C-V) ölçümlerinden
hesaplandı. Her iki engel yüksekliği değeri birbirleri ile karşılaştırıldı.
Cheung metodu kullanılarak karanlık ve 100 mW/cm2 aydınlatma durumu
altında seri direnç (Rs), engel yüksekliği ve idealite faktörü
belirlendi. Devrenin fotovoltaik parametreleri aydınlatma durumunda incelendi.
Al/Ru(II)/p-Si için açık devre voltajı ve kısa devre akımı sırasıyla 439.9 x 10-3
V ve 36.6 x 10-6 A olarak bulundu. Ruthenium (II) complex,
fotovoltaik performansı pozitif olarak etkilemiştir. Bu sonuçlar Al/Ru(II)/p-Si
yapısının fotovoltaik ve fotodedektör uygulamalarında bir fotodiyot olarak
kullanılabileceğini ortaya çıkarmıştır.

Keywords

Ruthenium (II) complex fotodiyot elektriksel karakteristiklere aydınlatma etkisi seri ve şönt direnci

References

  • [1]. D.L. Ashford, M.K. Brennaman, R.J. Brown, S. Keinan, J.J. Concepcion, J.M. Papanikolas, J.L. Templeton, T.J. Meyer, Inorg. Chem. 54 (2015) 460–469.
  • [2]. J.J. Concepcion, J.W. Jurss, M.K. Brennaman, P.G. Hoertz, A.O.T. Patrocinio, N.Y. Murakami Iha, J.L. Templeton, T.J. Meyer, Acc. Chem. Res. 42 (2009) 1954–1965.
  • [3]. P.D. Beer, J. Cadman, Coord. Chem. Rev. 205 (2000) 131–155.
  • [4]. R. Argazzi, N.Y. Murakami Iha, H. Zabri, F. Odobel, C.A. Bignozzi, Coord. Chem. Rev. 248 (2004) 1299–1316.
  • [5]. M. Kapilashrami, Y. Zhang, Y.-S. Liu, A. Hagfeldt, J. Guo, Chem. Rev. 114 (2014) 9662–9707.
  • [6]. A. Fakharuddin, R. Jose, T.M. Brown, F. Fabregat-Santiago, J. Bisquert, Energy Environ. Sci. 7 (2014) 3952–3981.
  • [7]. B. O’Regan, M. Gratzel, Nature 353 (1991) 737.
  • [8]. R.Koeppe, N.S.Sariciftci, P.A.Troshin, R.N.L.Yubovskaya, Applied Physics Letters 87 (2005) 244102.
  • [9]. F.Yakuphanoğlu, Solar Energy Materials&SolarCells 91 (2007) 1182.
  • [10]. Y.S. Ocak, M. A. Ebeoglu, G.Topal, T.Kılıcoglu, Physica B 405 (2010) 2329-2333.
  • [11]. A. Tataroglu, O. Dayan, N. Ozdemir, Z. Serbetci, Ahmed A. Al-Ghamdi, A. Dere, Farid El-Tantawy, F. Yakuphanoglu, Dyes and Pigments 132 (2016) 64-71
  • [12]. M.Soylu, I. Orak, O. Dayan, Z. Serbetci, Microelectronics Reliability 55 (2015) 2685-2688.
  • [13]. Orak, A. Turut, M. Toprak, Synthetic Metals 200 (2015) 66-73.
  • [14]. Ş. Aydoğan, M. Sağlam, A. Türüt, Microelectron. Reliab. 52 (2012) 1362-1366.
  • [15]. I.H. Campbell, S. Rubin, T.A. Zawodzinski, J.D.Kress, R.L. Martin, D. L. Smith, Phys. Rev. B 54 (1996) 14321.
  • [16]. Ö. Vural, N.Yıldırım, S.Altındal, A.Türüt, Synth. Met 157 (2007) 679.
  • [17]. M. Soylu, Mater. Sci. Semicond. Process. 14 (2011) 212.
  • [18]. Ö. Güllü, Ö. Barıs, M. Biber, A.Türüt, Appl. Surf. Sci. 254 (2008) 3039.
  • [19]. A.B.P. Lever, M.R. Hempstead, C.C. Leznoff, W. Lin, M. Melnik, W. A. Nevin, P. Seymour, Pure Appl. Chem. 58 (1986) 1467.
  • [20]. J. Simon, J.J. Andre, Molecular Semiconductors, Springer, Berlin, 1985.
  • [21]. Y. Sadaoka, T.A. Jones, W.Gopel, Sensors Actuators B 1 (1990) 148.
  • [22]. P.F. Baude, D.A. Ender, M.A. Haase, Appl. Phys. Lett. 82 (2003) 3964.
  • [23]. Ö. Güllü, Ş. Aydoğan, A.Türüt, Microelectron. Eng. 85 (2008) 1647.
  • [24]. C. Temirci, M. Çakar, Physica B 348 (2004) 454.
  • [25]. C. Özaydın, K. Akkılıç, S. İlhan, Ş. Ruzgar, Ö. Güllü, H. Temel, Materials Science in Semiconductor Processing 16 (2013) 1125–1130.
  • [26]. W. Kern Overview and evolution of silicon wafer cleaning technology Handbook of Silicon Wafer Cleaning Technology (2008) 2
  • [27]. O.A. Azim, M.M. Abdel-Aziz, I.S. Yahia, Appl. Surf. Sci. 255 (2009) 4829-4835.
  • [28]. K.R. Rajesh, C.S. Menon, The European Physical Journal B-Condensed Matter and Complex Systems 47 (2005) 171–176.
  • [29]. E. H. Rhoderick, R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. Clarendon, Oxford, 1988.
  • [30]. I. Ay, H. Tolunay, Solid-State Electron. 51 (2007) 381–386.
  • [31]. H. Tecimer, S. Aksu, H. Uslu, Y. Atasoy, E. Bacaksız, Ş. Altındal, Sens. Actuators 185 (2012) 73.
  • [32]. G.-F. Dalla Betta, Advances in Photodiodes InTech, India (2011)
  • [33]. R.T. Tung Phys. Rev. B, 64 (2001), p. 205310
  • [34]. R. Kumar, S. Chand J. Mater. Sci. Mater. Electron, 25 (2014), pp. 4531-4537
  • [35]. S. K. Cheung, N. W. Cheung, Appl. Phys. Lett. 49 (1986) 85.
  • [36]. J. Nelson, The Physics of Solar Cells Imperical College Press, UK (2003)
  • [37]. B. Sahin, H. Cetin, E. Ayyıldız, Solid State Commun 135(2005) 490-495.
  • [38]. S.M. Sze, Physics of Semiconductor Devices,(2nded) Wileyand NY,1981.
  • [39]. J.P.P.R. Barry, J. Genoe, P. Heremans, Progr. Photovol. Res. Appl. 15 (2007) 659–676.
  • [40]. B. Wang, H. Ding, Y. Hu, H. Zhou, S. Wang, T. Wang, et al., Int. J. Hydrogen Energy 38 (2013) 16733-16739.
  • [41]. Wilmsen, C. W.,1985. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Plenum Press, New York.
There are 41 citations in total.

Details

Subjects Engineering
Journal Section Special
Authors

Hülya Doğan

İkram Orak

Nezir Yıldırım

Publication Date April 24, 2017
Published in Issue Year 2017 Volume: 38 Issue: 2

Cite

APA Doğan, H., Orak, İ., & Yıldırım, N. (2017). Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-complex / p-Si Photodiode. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi, 38(2), 329-341. https://doi.org/10.17776/cumuscij.297189
AMA Doğan H, Orak İ, Yıldırım N. Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-complex / p-Si Photodiode. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi. April 2017;38(2):329-341. doi:10.17776/cumuscij.297189
Chicago Doğan, Hülya, İkram Orak, and Nezir Yıldırım. “Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-Complex / P-Si Photodiode”. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi 38, no. 2 (April 2017): 329-41. https://doi.org/10.17776/cumuscij.297189.
EndNote Doğan H, Orak İ, Yıldırım N (April 1, 2017) Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-complex / p-Si Photodiode. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi 38 2 329–341.
IEEE H. Doğan, İ. Orak, and N. Yıldırım, “Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-complex / p-Si Photodiode”, Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi, vol. 38, no. 2, pp. 329–341, 2017, doi: 10.17776/cumuscij.297189.
ISNAD Doğan, Hülya et al. “Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-Complex / P-Si Photodiode”. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi 38/2 (April 2017), 329-341. https://doi.org/10.17776/cumuscij.297189.
JAMA Doğan H, Orak İ, Yıldırım N. Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-complex / p-Si Photodiode. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi. 2017;38:329–341.
MLA Doğan, Hülya et al. “Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-Complex / P-Si Photodiode”. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi, vol. 38, no. 2, 2017, pp. 329-41, doi:10.17776/cumuscij.297189.
Vancouver Doğan H, Orak İ, Yıldırım N. Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-complex / p-Si Photodiode. Cumhuriyet Üniversitesi Fen Edebiyat Fakültesi Fen Bilimleri Dergisi. 2017;38(2):329-41.

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