Accurate Modeling of the Polysilicon-Insulator-Well (PIW) Capacitor in CMOS Technologies

Year 2015, Volume: 36 Issue: 3, 216 - 221, 13.05.2015

Shahriar Jamasb , Roya Moosavi

Abstract

Abstract. A practical method enabling rapid development of an accurate device model for the PIW MOS capacitor is introduced. The simultaneous improvement in accuracy and development time can be achieved without having to perform extensive measurements on specialized test structures by taking advantage of the MOS transistor model parameters routinely extracted in support of analog circuit design activities. This method affords accurate modeling of the voltage coefficient of capacitance over the entire range of operating voltages. Furthermore, a compact subcircuit representation is proposed, which takes the distributed parasitic series resistance associated with the PIW capacitor into account, thereby allowing modeling of the limitations imposed on high-frequency performance as well as the quality factor. The validity of the proposed method is verified based on capacitance versus voltage measurements performed using a test vehicle fabricated in a submicron CMOS technology.

Keywords

Polysilicon-insulator-well MOS capacitor model, CMOS

References

• Li-Sheng Wang, Lu Liu, Jing-Ping Xu, Shu-Yan Zhu, Yuan Huang, Pui-To Lai, “Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer”, IEEE Trans. on Electron Devices, Vol. 61 , No. 3, pp.742-746, 2014.
• E.H. Oulachgar, C. Aktik, , M. Scarlete, “Fabrication and Characterization of GaAs MOS Capacitor With CVD Grown Polymer-Based Thin Film as a Gate Dielectric”, IEEE Trans. on Electron Devices, Vol. 57 , No. 8, pp.1942-1947, 2010.
• Wan Wenyan, Cheng Xinhong, Cao Duo, Zheng Li, Xu Dawei, Wang Zhongjian, Xia Chao, Shen Lingyan, Yu Yuehui, Shen DaShen, “Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition”, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, No. 1, pp. 01A127 - 01A127-4, 2014.
• T.H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, New York: Cambridge University Press, 1998, p. 39.