Changes in conductivity and capacitance as a result of the approach of E. faecalis bacteria carrying negative electrical charge to PS/Si structures produced in different porous sizes with the effect of electric field

Abstract

The fact that bacteria carry an electric charge is an indication that they can be affected by the electric field.As an example, it has been determined that Enterococcus faecalis (E. faecalis) bacteria carrying negative electrical charge can be moved in a desired direction by the effect of electric field.In this study, the porous silicon (PS) based sensor platform for obtaining the n-type single crystal electrochemical anodization process results apply to different parameters using silicon 60% porosity (7-15μmin pore size) and 50% porosity (the 1-5 μmpore size) to In / Si / PS / Ag structures with two different properties were obtained.These PS-based structures obtained were immersed in fluids containing negative electric charge E. faecalis bacteria and 0-5 kV / cm electric field values were applied in forward and reverse direction to show the effect of pores produced in different sizes on the approach and removal of bacteria to the pores.Since the pore sizes are adjustable, the electrical measurements of bacteria in structures with different pore sizes were examined, and the frequency-dependent conductivity-frequency and capacitance-frequency values were discussed.

Keywords

• Porous silicon
• E. faecalis
• Impedance spectroscopy
• Electric field

Negatif elektrik yükü taşıyan E. faecalis bakterilerinin elektrik alan etkisi ile farklı gözenekli boyutlarda üretilen GS/Si yapılara yaklaştırılması sonucu iletkenlik ve kapasitans değişimleri

Abstract

Bakterilerin elektrik yükü taşıması, elektrik alanından etkilenebileceklerinin bir göstergesidir. Buna örnek olarak, negatif elektrik yükü taşıyan Enterococcus faecalis (E. faecalis) bakterilerinin elektrik alan etkisi ile istenilen bir yöne doğru hareket ettirilebildiği tespit edildi. Çalışmada, gözenekli silisyum (GS) tabanlı sensör platformlarını elde etmek için n tipi tek kristal silisyum kullanılarak farklı parametrelerde uygulanan elektrokimyasal anodizasyon işlemi sonucu %60 gözeneklilik (7-15 μm gözenek boyutlarında) ve % 50 gözeneklilik (1-5 μm gözenek boyutlarında) olmak üzere iki farklı özellikte In/Si/GS/Ag yapılar elde edildi. Elde edilen bu GS tabanlı yapılar, negatif elektrik yükü bulunan E. faecalis bakterisi içeren sıvılara daldırılarak 0-5 kV/cm elektrik alan değerlerinin ileri yönde ve ters yönde uygulanması sonucu gözeneklere bakteri yaklaştırılması ve uzaklaştırılmasına farklı boyutlarda üretilmiş gözeneklerin etkisinin gösterilmesi amaçlandı. Gözenek boyutlarının ayarlanabilir olması nedeniyle bakterilerin farklı gözenek boyutlarına sahip yapılardaki elektriksel ölçümleri incelenerek, frekansa bağlı iletkenlik-frekans ve kapasitans-frekans değerleri tartışıldı.

Keywords

• Gözenekli silisyum
• E. faecalis
• Empedans spektroskopisi
• Elektrik alan

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