FOTOVOLTAİK GÜNEŞ PİLLERİNDE KULLANILAN ZNO VE CUO FİLMLERİNİN SILAR YÖNTEMİ İLE ÜRETİLMESİ VE KARAKTERİZASYONU

Year 2017, Volume: 19 Issue: 56, 468 - 483, 01.05.2017

Olcay Gençyılmaz , Turan Taşköprü

https://doi.org/10.21205/deufmd.2017195646

Cited By: 2

Abstract

Bu çalışmada ZnO ve CuO filmleri pratik ve ekonomik bir teknik
olan SILAR (Successive Ionic Layer Adsorption and Reaction)
yöntemi ile üretilmiştir. Filmlerin yapısal, optik, elipsometrik,
yüzeysel ve elektrik özellikleri sırası ile XRD, UV spektroskopisi,
Spektroskopik Elipsometre (SE), Atomik Kuvvet Mikroskobu
(AFM) ve dört-uç tekniği kullanılarak incelenmiştir. Filmlerin
yasak enerji aralıkları, optik metot kullanılarak 3,22 eV-1,72 eV
olarak hesaplanmıştır. Spektroskopik elipsometre (SE) tekniği ile
filmlerinin kalınlıkları ve bazı optik sabitleri (sönüm katsayısı ve
kırılma indisi) belirlenmiştir. Ayrıca, filmlerin üç boyutlu yüzey
görüntüleri incelenmiş ve ortalama yüzey pürüzlülük değerleri
38 nm and 60 nm olarak tespit edilmiştir. Filmlerin elektriksel
özdirenç değerleri ve iletim tipi sırasıyla dört-uç metodu ve sıcak
uç tekniği kullanılarak belirlenmiştir.

Keywords

Fotovoltaik güneş pilleri, ZnO ve CuO filmleri, SILAR, XRD, SE, AFM

The Production of ZnO and CuO Films by SILAR Method andCharacterization for Use in Photovoltaic Solar Cells

Abstract

In this study; ZnO and CuO films were produced by SILAR (Successive Ionic Layer Adsorption and Reaction) technique which is a practically and economic. The films of structural, optical, ellipsometric, surface and electrical properties were determined by XRD diffactometer, UV spectrophotometer, Spectroscopic Ellipsomery (SE), Atomic Force Microscope (AFM), Four-Probe, respectively. The band gaps of films were calculated as 3.22 eV-1.72 eV using optic method. The thickness and some optic constants (extinction coefficient and refractive index) of films were investigated by SE. Also, the three dimensional surface images of films were obtained and the average surface roughness values were determined as 38 and 60 nm. The electrical resistivity values and conduction mechanism were investigated by using four-probe and hot-probe technique, respectively

Keywords

Photovoltaic solar cells, ZnO and CuO films, SILAR, XRD, SE, AFM

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