Yarım köprü rezonans tipi evirgeç topolojilerinin değerlendirilmesi

Year 2020, Volume: 22 Issue: 65, 505 - 515, 15.05.2020

Yildiray Başkurt

https://doi.org/10.21205/deufmd.2020226518

Abstract

Rezonans güç evirgeçleri, günümüz
güç elektroniği endüstrisinde, yüksek verimleri nedeniyle yaygın olarak kullanılmaktadır.
Bu yüksek verim evirgeçlerin sıfır akım anahtarlama (ZCS) veya sıfır gerilim
anahtarlama (ZVS) modlarında çalıştırılmasının sonucudur. Her ne kadar birçok
topoloji mevcut olsa da, bunların çoğu temel olarak “gerilim kaynaklı seri
rezonans” ve “akım kaynaklı paralel rezonans” tipi evirgeçler olarak
adlandırılan iki temel yapıdan türetilmiştir. Her iki evirgeç topolojisi, tam
köprü ve yarım köprü devre varyasyonlarını içerir. Bu çalışmada, seri köprü
tipi ve paralel rezonans evirgeçler incelenmiştir. İki tip arasında – pratik
uygulamalara göre – bir karşılaştırma da sunulmuştur. Analitik olarak elde
edilen sonuçlar, iki prototip üzerinde deneysel ölçümlerle karşılaştırılmıştır.
Özel olarak, 80 kVA’lık bir yarım köprü serisi rezonansı ve 3 kVA’lık bir yarım
köprü paralel rezonans tipi indüksiyon ısıtma kaynakları incelenmiş ve detaylı
bir karşılaştırma tablosu literatüre kazandırılmıştır.

Keywords

Yarım Köprü Invertör, Rezonans Invertör, snubber devresi, indüksiyon ile ısıtma

Evaluation of half-bridge resonant inverter topologies

Abstract

Resonant power inverters are
widely used in today’s power electronic industry due to their high
efficiencies. These high efficiencies are the result of operating the inverters
in either zero current switching (ZCS) or zero voltage switching (ZVS) modes.
Although there are many topologies available, the majority of them are mainly
derived from two basic structures called “the
voltage source series resonant” and “the
current source parallel resonant” type inverters. Both inverter topologies
incorporate full bridge and half-bridge circuit variations. In this paper, the
half-bridge type of series and parallel resonant inverters are investigated. A comparison between the two types - with respect to practical applications - is also
presented. Analytically derived results are compared against experimental
measurements for two prototypes. Specifically, an 80 kVA half-bridge series
resonant and a 3kVA half-bridge parallel resonant type induction heating
supplies are being compared. At the end of the study, a detailed comparison
table was introduced to the literature

Keywords

Half-Bridge Inverter, Resonant Inverters, snubber circuits, induction heating

References

• [1] Dieckerhoff, S., Ryan, M.J,, Doncker, R.W. 1999. Design of an IGBT-based LCL-Resonant Inverter for High Frequency induction Heating. IEEE 34th Industry Applications Conference, 3-7 October, Phoenix, AZ, USA, 2039-2045.
• [2] CREE Inc. 2013. Design Considerations for Designing with Cree SiC Modules Part 1. Understanding the effects of parasitic inductance CPWR-AN12. Durham, NC, USA: Cree.
• [3] CREE Inc. 2013. Design Considerations for Designing with Cree SiC Modules Part 2. Techniques for minimizing parasitic inductance CPWR-AN13. Durham, NC, USA: Cree.
• [4] Kazimierczuk, M.K., Czarkkowski, D. 2011. Resonant Power Converters. 2nd ed. New Jersey, USA: John Willey & Sons Inc., p. 149-157, p.309-315.
• [5] Dimitrijev, S. 2011. Principles of Semiconductor Devices. 2nd ed. Oxford, United Kingdom: Oxford University Press, p. 239-241.
• [6] Linder, S. 2006. Power Semiconductors. 1st ed. Lausanne, Switzerland: EPFL Press, p 83-85.
• [7] Lu, J., Tian, X., Lu, S., Zhou, H., Zhu, Y., Han, Z. 2013. Dynamic Avalanche Behavior of power MOSFETs and IGBTs under Unclamped Inductive Switching Conditions, Journal of Semiconductors, Volume 34, No 3, 5. doi:101088/1674-4926/34/3/034002.
• [8] Namadmalan, A., Moghani, J.S., Milimonfared, J.A. 2011. A Current-Fed Parallel Resonant Push-Pull Inverter with a New Cascaded Coil Flux Control for Induction Heating Applications, Journal of Power Electronics, Volume 11, No. 5, p.632-638.
• [9] Phillipou, A., Jaeger, C., Laven, J.G., Baburske, L., Shulltz, H. J., Pfirsch, F., Niedernosthedide F. J., Vellei, A., Itani, H. Critical Over Current Turn-off Close to IGBT Current Saturation: Proceedings of 27th International Symposium of Power Semiconductor Devices & ICs, May 10-14, 2015, Kowloon, Hong Kong, 113-116.
• [10] Stephen, J.F., Barry, W., Green, T.C. 1996. RCD Snubber Revised, IEEE Transactions on Industry Applications, Volume 32, p.155-160.
• [11] Yamashita, Y., Furuta, J., Inamori, S., Kobayashi, K. 2017. Design of RCD Snubber Considering Wiring Inductance for MHz-switching of SiC-MOSFET. IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL), 9-12 July, Stanford, CA, USA, 1-6.