Al/(ZnFe2O4-PVA)/P-Si Yapılarda, Empedans ve Arayüz Durumlarının Frekansa Bağlı Analizi

Year 2024, , 1964 - 1976, 23.10.2024

Jaafar Alsmael , Nuray Urgun , Seçkin Altındal Yerişkin , Serhat Orkun Tan

https://doi.org/10.29130/dubited.1395252

Abstract

Bu çalışmada çinko ferrit (ZnFe2O4) katkılı polivinil alkolden (PVA) yapılmış bir filmin özellikleri araştırılmaktadır. Film, alüminyum (Al) ve p-Si yapı arasına sıkıştırılmış olup, yapı üzerinde voltajın yanı sıra geniş bir frekans aralığında elektriksel ölçümler yapılmıştır. Çalışma, ZnFe2O4-PVA ara katmanının yüzey durumları (NSS) ve kompleks empedans (Z* = Z' - jZ'') üzerine etkilerini değerlendirmektedir. Orta ve yüksek frekanslarda seri direnç (RS) ve ara katman değerlerinin kapasitans-gerilim (C-V) ve iletkenlik-gerilim (G/ω-V) özellikleri üzerinde dikkate değer bir etkisi gözlemlenmiştir. Bu nedenle, RS etkisini ortadan kaldırmak için C-V ve G/ω-V değerleri yüksek frekansta düzenlenmiştir. NSS değerlerini tahmin etmek için Hill-Coleman yaklaşımı kullanıldı. Deneysel sonuçlar hem NSS hem de RS’in ve metal-polimer-yarı iletken (MPS) yapısındaki ara katmanın, elektriksel ve dielektrik özellikleri önemli ölçüde değiştiren kritik faktörler olduğunu doğrulamaktadır. Empedans çalışmasından elde edilen sonuçların analizi farklı davranışlar gösterdi. Arayüzey ile dipol polarizasyonunun karşılıklı etkisi sonucunda empedans değerlerinin düşük frekansta arttığı, yüksek frekanslarda ise azaldığı gözlenmiştir. Çalışma, yüksek dielektrik değeri nedeniyle ZnFe2O4-PVA ara katmanının, yük/enerji depolaması için geleneksel yalıtkanlara nazaran daha iyi bir alternatif olabileceğini öne sürmektedir.

Keywords

Al/(ZnFe2O4-PVA)/p-Si, Frekans ve voltaj bağımlılığı, Seri direnç ve arayüzey durumları, Frekansa bağlı Karmaşık empedans

Impedance and Interface States Depending on Frequency Analysis of Al/(ZnFe2O4-PVA)/p-Si Structures

Abstract

This study investigates the properties of a film made of zinc ferrite (ZnFe2O4) doped polyvinyl alcohol (PVA). The film is sandwiched between an aluminum (Al) and p-Si semiconductor layers, and electrical measurements are conducted on the structure in a wide scope of frequency besides voltage. The study evaluates the impacts of the ZnFe2O4-PVA interlayer on surface-states (NSS), and complex-impedance (Z* = Z' - jZ''). A remarkable impact of the values of series resistance (RS) and the interlayer on the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) data has been observed at moderate and high frequencies. Hence, the C and G/ω versus V qualities were modified at high frequency to eliminate the outcome of RS. The Hill-Coleman approach was utilized to estimate the values for NSS. Experimental results confirm that both the NSS , RS and the interlayer in the metal-polymer-semiconductor (MPS) structures are critical factors that significantly alter the electrical and dielectric properties. The analysis of the results obtained from the impedance study showed divergent behavior. It was observed that the impedance values increase in the low frequency, while they diminish in the higher frequencies, as a result of the mutual effect between the interface and the dipole polarization. The study suggests that due to its high dielectric value, the ZnFe2O4-PVA interlayer may be a better alternative to conventional insulators for charge/energy storage.

Keywords

Al/(ZnFe2O4-PVA)/p-Si, Frequency and voltage dependence, Series resistance and Interface states, Frequency dependent Complex-impedance

Ethical Statement

It is declared that scientific and ethical principles have been followed while carrying out and writing this study and that all the sources used have been properly cited.

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