Geniş Bant ve Geniş Dinamik Giriş Güç Aralığına Sahip Kablosuz Güç Transferi için Çift Dallı Şönt Diyotlu RF Doğrultucu

Year 2025, Volume: 13 Issue: 4, 1518 - 1527, 30.10.2025

Sadik Zuhur , Muhammed Said Boybay

https://doi.org/10.29130/dubited.1657055

Abstract

Bu çalışmada geniş bantlı RF enerji hasatlama uygulamaları için çift kollu çift şönt diyotlu bir doğrultucu tasarlanmış ve performansı detaylı olarak incelenmiştir. Önerilen yapı 19 mm × 21 mm boyutlarında kompakt bir tasarıma sahip olup substrat olarak FR4 kullanılmıştır. Gömülü potansiyel gerilimi (Vbi) ve delinme gerilimi (Vbr) kaynaklı kayıpları azaltmak amacıyla, giriş ile yük arasına paralel olarak iki kol içeren bir yapı tasarlanmış ve her kola şönt diyot yerleştirilmiştir. Tasarıma şematik simülasyonun yanı sıra elektromanyetik simülasyon uygulanarak doğrultucunun geniş bantta ve geniş giriş gücü aralığında verimli çalıştığı kanıtlanmıştır. Simülasyon sonuçlarına göre, önerilen doğrultucu 1.6 – 3.4 GHz frekans aralığında %65'in üzerinde bir güç dönüşüm verimliliği (PCE) elde etmektedir. En yüksek PCE değeri ise 2 GHz frekansında ve 10.8 dBm giriş gücü altında %75.23 olarak gözlemlenmiştir. Aynı zamanda önerilen doğrultucu 2 GHz frekansında -1 – 13 dBm giriş gücü aralığında %50’nin üzerinde PCE elde edilmiştir. Mevcut çalışmalarla kıyaslandığında önerilen doğrultucu geniş bant aralığı, geniş giriş gücü aralığı, yüksek güç dönüşüm verimi ve kompakt tasarımıyla öne çıkmaktadır. Bu nedenlerle önerilen çalışmanın düşük güçlü otonom cihazlar için etkili bir alternatif olabileceği değerlendirilmektedir.

Keywords

RF Enerji Hasatlama , Schottky diyot , Empedans eşleştirme , FR4 , Elektromanyetik simülasyon

A Dual-Branch Shunt-Diode RF Rectifier with Wideband and Wide Dynamic Input Power Range for Wireless Power Transfer

Abstract

In this study, a dual-branch, dual-shunt-diode rectifier has been designed and its performance has been thoroughly analyzed for wideband RF energy harvesting applications. The proposed structure features a compact design with dimensions of 19 mm × 21 mm, utilizing FR4 as the substrate. To reduce losses caused by built-in potential (Vbi) and breakdown voltage (Vbr), a dual-branch design was implemented, with each branch incorporating shunt diodes as rectifiers. In addition to schematic simulations, electromagnetic simulations were conducted, demonstrating that the rectifier operates efficiently over a wide bandwidth and a broad input power range. According to simulation results, the proposed rectifier achieves a power conversion efficiency (PCE) exceeding 65% across the 1.6 – 3.4 GHz frequency range, with a peak PCE of 75.23% observed at 2 GHz under an input power of 10.8 dBm. Moreover, at 2 GHz, the rectifier maintains a PCE above 50% over a -1 to 13 dBm input power range. Compared to existing studies, the proposed rectifier stands out due to its wide bandwidth, broad input power range, high power conversion efficiency, and compact design. Therefore, this work presents an effective alternative for low-power autonomous devices.

Keywords

RF Energy Harvesting , Schottky Diode , Impedance Matching , FR4 , Electromagnetic Simulation

Ethical Statement

This study does not involve human or animal participants. All procedures followed scientific and ethical principles, and all referenced studies are appropriately cited.

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