Mo/n-Si Schottky Diyotların Akım-Voltaj ve Kapasite-Voltaj Karakteristiklerinin Analizi

Abstract

Bu çalışmada Mo/n-Si Schottky diyotların bazı elektriksel özellikleri incelendi. Diyotlar, Molibdenin (Mo) n-tipi Silisyum (Si) üzerine manyetik saçtırma yöntemi kullanılarak biriktirilmesiyle üretildi. Akım-voltaj (I-V) ve kapasite-voltaj (C-V) ölçümleri oda sıcaklığında alındı. İdealite faktörü (n=1,48), sıfır beslem engel yüksekliği (  b0=0,72 eV), seri direnç (Rs=2,02 k) gibi temel diyot parametreleri I-V verileri kullanılarak elde edildi. Ayrıca engel yüksekliği ve katkılama yoğunluğu (ND) değerleri 1kHz-3MHz frekans aralığında C-V ölçümlerinden belirlendi. I-V ve C-V ölçümlerinden elde edilen  b değerleri karşılaştırıldı. Her iki yöntemden elde edilen engel yüksekliği değerlerinin farklılığı, engel yüksekliğinin homojen olmayışı olgusuna ve geleneksel I-V ve C-V yöntemlerinin farklı tabiatına atfedildi. 

Keywords

• Schottky diyot,İdealite faktörü,Engel yüksekliği,Seri direnç

Analysis of Current-Voltage and Capacitance-Voltage Characteristics of Mo/n-Si Schottky Diodes

Abstract

In this work, we have investigated the some electrical properties of Mo/n-Si Schottky diodes in detail. These diodes were fabricated by magnetic sputtering of Mo on n-Si. The current-voltage (I-V) and capacitance-voltage (C-V) measurements were taken at room temperature. Basic parameters such as ideality factor (n=1,48), zerobias barrier height (b0=0,72 eV), series resistance (Rs=2,02 k) values were obtained by using I-V data. Also, barrier height and doping concentration (ND) values were determined from C-V measurements between 1 kHz and 3 MHz frequency values. The barrier height values obtained from I-V and C-V measurements were found as different. This case attributed to barrier height inhomogeneity and different natures of conventional I-V and C-V methods. 

Keywords

• Schottky diode,Ideality factor

References

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