Yalıtkan/Yarıiletken Ara Yüzeyin Kendiliğinden Biriken Tek katman Tekniği ile Organik Alan Etkili Transistör (OFET) Performansına Etkisi

Year 2019, Volume: 7 Issue: 3, 2019 - 2029, 31.07.2019

Tuğbahan Yılmaz Alıç

https://doi.org/10.29130/dubited.554914

Abstract

Kendiliğinden Birikme, yüzeylerin fonksiyonelleştilmesi için
etkili bir teknilerden biridir. Kendiliğinden biriken moleküller (Self-assembled
monolayers, SAM), iletken/yarıiletken ve yalıtkan/yarıiletken yüzeyler üzerine
oluşturulabilir ve çeşitli teknolojik uygulamalarda kullanılmaktadır. Bu
çalışmada, kendiliğinden biriken tek katman molekülleri kullanılarak Organik
Alan Etkili Transistörlerin yalıtkan/yarıiletken ara yüzeyi
fonksiyonelleştirilerek aygıt performansı arttırılması amaçlanmıştır.

Keywords

Ara yüzey modifikasyonu, Fenilboronik Asit (PBA) ve türevleri, Kendiliğinden Biriken Tekkatman, OFET

The Effect of the Insulator/Semiconductor Interface on Transistor Performance with Self-Assembly Monolayer Technique

Abstract

Self-assembly is one of the most effective technıques for surface
functionalization. Self-assembled monolayers (SAMs) can be formed on conductor/semiconductor
and dielectric/semiconductor surfaces, and have been used in a variety of
technological applications. In this work aims to increased performance of
Organic Field Effect Transistors using self-assembled monolayers molecules on
dielectric/semiconductor surface.

Keywords

Interface modification, Phenlyboronic Acid (PBA) ve its derivaties, Self-Assembly Monolayer, OFET

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